Magnetic field-induced enhancement of the nitrogen-vacancy fluorescence quantum yield.

The nitrogen-vacancy (NV) centre in diamond is a unique optical defect that is used in many applications today and methods to enhance its fluorescence brightness are highly sought after. We observed experimentally an enhancement of the NV quantum yield by up to 7% in bulk diamond caused by an external magnetic field relative to the field-free case. This observation is rationalised phenomenologically in terms of a magnetic field dependence of the NV excited state triplet-to-singlet transition rate. The theoretical model is in good qualitative agreement with the experimental results at low excitation intensities. Our results significantly contribute to our fundamental understanding of the photophysical properties of the NV defect in diamond.

Fluorescent color centers in laser ablated 4H-SiC nanoparticles.

Nanostructured and bulk silicon carbide (SiC) has recently emerged as a novel platform for quantum nanophotonics due to its harboring of paramagnetic color centers, having immediate applications as a single photon source and spin optical probes. Here, using ultra-short pulsed laser ablation, we fabricated from electron irradiated bulk 4H-SiC, 40-50 nm diameter SiC nanoparticles, fluorescent at 850-950 nm. This photoluminescence is attributed to the silicon vacancy color centers. We demonstrate that the original silicon vacancy color centers from the target sample were retained in the final nanoparticles solution, exhibiting excellent colloidal stability in water over several months. Our work is relevant for quantum nanophotonics, magnetic sensing, and biomedical imaging applications.

Bright and photostable nitrogen-vacancy fluorescence from unprocessed detonation nanodiamond.

Bright and photostable fluorescence from nitrogen-vacancy (NV) centers is demonstrated in unprocessed detonation nanodiamond particle aggregates. The optical properties of these particles is analyzed using confocal fluorescence microscopy and spectroscopy, time resolved fluorescence decay measurements, and optically detected magnetic resonance experiments. Two particle populations with distinct optical properties are identified and compared to high-pressure high-temperature (HPHT) fluorescent nanodiamonds. We find that the brightness of one detonation nanodiamond particle population is on the same order as that of highly processed fluorescent 100 nm HPHT nanodiamonds. Our results may open the path to a simple and up-scalable route for the production of fluorescent NV nanodiamonds for use in bioimaging applications.

Green lasers are beyond power limits mandated by safety standards.

There has been an increasing number of reports of people losing vision from laser exposure from pocket laser pointers despite the safety limit of 1 milliwatt (1mW) imposed by the Australian government. We hypothesize that this is because commercially available red and green laser pointers are exceeding their labeled power outputs. We tested the power outputs of 4 red and 4 green lasers which were purchased for less than AUD$30 each. The average of 10 measurements was recorded for each laser. We found that 3 out of 4 red lasers conformed to the 1mW safety standard; in contrast, all of the green lasers exceeded this limit, with one of the lasers recording an output of 127.9 mW. This contrast in compliance is explained by the construction of these lasers - green lasers are typically Diode Pumped Solid State (DPSS) lasers that can emit excessive infrared (IR) radiation with poor workmanship or inconsistent adherence to practices of safe design and quality control; red lasers are diode lasers which have limited power outputs due to `Catastrophic Optical Damage' (COD). Relevant professional bodies ought to advocate more strongly for stringent testing, quality control and licensing of DPSS lasers with a view towards government intervention to banning green laser pointer use.

Direct measurement and modelling of internal strains in ion-implanted diamond.

We present a phenomenological model and finite element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution x-ray diffraction; secondly, the mass density variation of a sample implanted with 500 keV He ions, well above its amorphization threshold, is characterized with electron energy loss spectroscopy. At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing transmission electron microscopy-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.

The near edge structure of cubic boron nitride.

We compare the near edge structure (NES) of cubic boron nitride (cBN) measured using both electron energy loss spectroscopy (EELS) and X-ray absorption spectroscopy (XAS) with that calculated using three commonly used theoretical approaches. The boron and nitrogen K-edges collected using EELS and XAS from cBN powder were found to be nearly identical. These experimental edges were compared to calculations obtained using an all-electron density functional theory code (WIEN2k), a pseudopotential density functional theory code (CASTEP) and a multiple scattering code (FEFF). All three codes were found to reproduce the major features in the NES for both ionisation edges when a core-hole was included in the calculations. A partial core hole (1/2 of a 1s electron) was found to be essential for correctly reproducing features near the edge threshold in the nitrogen K-edge and to correctly obtain the positions of all main peaks. CASTEP and WIEN2k were found to give almost identical results. These codes were also found to produce NES which most closely matched experiment based on χ² calculations used to qualitatively compare theory and experiment. This work demonstrated that a combined experimental and theoretical approach to the study of NES is a powerful way of investigating bonding and electronic structure in boron nitride and related materials.

The origin of preferred orientation during carbon film growth.

Carbon films were prepared using a filtered cathodic vacuum arc deposition system operated with a substrate bias varying linearly with time during growth. Ion energies were in the range between 95 and 620 eV. Alternating dark, high density (sp(3) rich) bands and light, low density (sp(2) rich) bands were observed using cross-sectional transmission electron microscopy, corresponding to abrupt transitions between materials with densities of approximately 3.1 and 2.6 g cm(-3). No intermediate densities were observed in the samples. The low density bands show strong preferred orientation with graphitic sheets aligned normal to the film. After annealing, the low density bands became more oriented and the thinner high density layers were converted to low density material. In molecular dynamics modelling of film growth, temperature activated structural rearrangements occurring over long timescales ([Formula: see text] ps) caused the transition from sp(3) rich to oriented sp(2) rich structure. Once this oriented growth was initiated, the sputtering yield decreased and channelling was observed. However, we conclude that sputtering and channelling events, while they occur, are not the cause of the transition to the oriented structure.

Abrupt stress induced transformation in amorphous carbon films with a highly conductive transition phase.

We demonstrate that when, and only when, the biaxial stress is increased above a critical value of 6+/-1 GPa during the growth of a carbon film at room temperature, tetrahedral amorphous carbon is formed. This confirms that the stress present during the formation of an amorphous carbon film determines its sp;{3} bonding fraction. In the vicinity of the critical stress, a highly oriented graphitelike material is formed which exhibits low electrical resistance and provides Ohmic contacts to silicon. Atomistic simulations reveal that the structural transitions are thermodynamically driven and not the result of dynamical effects.