Magnetic-field-induced ferroelectric polarization reversal in the multiferroic Ge(1-x)Mn(x)Te semiconductor.

Ge(1-x)Mn(x)Te is shown to be a multiferroic semiconductor, exhibiting both ferromagnetic and ferroelectric properties. By ferromagnetic resonance we demonstrate that both types of order are coupled to each other. As a result, magnetic-field-induced ferroelectric polarization reversal is achieved. Switching of the spontaneous electric dipole moment is monitored by changes in the magnetocrystalline anisotropy. This also reveals that the ferroelectric polarization reversal is accompanied by a reorientation of the hard and easy magnetization axes. By tuning the GeMnTe composition, the interplay between ferromagnetism and ferroelectricity can be controlled.

Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature.

Ferromagnetic Ge(1-x)Mn(x)Te is a promising candidate for diluted magnetic semiconductors because solid solutions exist over a wide range of compositions up to x(Mn)≈0.5, where a maximum in the total magnetization occurs. In this work, a systematic study of molecular beam epitaxy of GeMnTe on (1 1 1) BaF(2) substrates is presented, in which the Mn concentration as well as growth conditions were varied over a wide range. The results demonstrate that single phase growth of GeMnTe can be achieved only in a narrow window of growth conditions, whereas at low as well as high temperatures secondary phases or even phase separation occurs. The formation of secondary phases strongly reduces the layer magnetization as well as the Curie temperatures. Under optimized conditions, single phase GeMnTe layers are obtained with Curie temperatures as high as 200 K for Mn concentrations close to the solubility limit of x(Mn)=50%.

Controlled aggregation of magnetic ions in a semiconductor: an experimental demonstration.

The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by the growth rate and doping with shallow impurities.

Strain induced changes in the magnetic phase diagram of metamagnetic heteroepitaxial EuSe/PbSe(1-x)Tex multilayers.

Multilayers of strained metamagnetic EuSe intercalated with nonmagnetic PbSe1-xTex were grown by molecular beam epitaxy under conditions optimized by electron diffraction. From detailed structural and magnetic characterization using anomalous synchrotron x-ray diffraction and magnetization measurements, the phase transition temperatures and the magnetic phase diagrams of strained EuSe as a function of the in-plane lattice constant are determined. In this way, it is demonstrated that the magnetic properties of the samples can be significantly changed by applying biaxial strain on EuSe in superlattice structures.

Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.

Anomalous x-ray scattering is employed for quantitative measurements of the Ge composition profile in islands on Si(001). The anomalous effect in SiGe is enhanced exploiting the dependence of the complex atomic form factors on the momentum transfer. Comparing the intensity ratios for x-ray energies below and close to the K edge of Ge at various Bragg reflections in the grazing incidence diffraction setup, the sensitivity for the Ge profile is considerably enhanced. The method is demonstrated for SiGe dome-shaped islands grown on Si(001). It is found that the composition inside the island changes rather abruptly, whereas the lattice parameter relaxes continuously.