Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics.

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better performance and integration than traditional oxide ferroelectrics with semiconductors such as Si, SiC, and III-V compounds. However, wurtzite-type ferroelectrics generally require enormous electric fields, approaching breakdown, to reverse their polarization. The underlying switching mechanism(s), especially for multinary compounds and alloys, remains elusive. Here, we examine the switching behaviors in Al1-xScxN alloys and wurtzite-type multinary candidate compounds we recently computationally identified. We find that switching in these tetrahedrally coordinated materials proceeds via a variety of nonpolar intermediate structures and that switching barriers are dominated by the more-electronegative cations. For Al1-xScxN alloys, we find that the switching pathway changes from a collective mechanism to a lower-barrier mechanism enabled by inversion of individual tetrahedra with increased Sc composition. Our findings provide insights for future engineering and realization of wurtzite-type materials and open a door to understanding domain motion.

Identifying native point defect configurations inα-alumina.

Intimately intertwined atomic and electronic structures of point defects govern diffusion-limited corrosion and underpin the operation of optoelectronic devices. For some materials, complex energy landscapes containing metastable defect configurations challenge first-principles modeling efforts. Here, we thoroughly reevaluate native point defect geometries for the illustrative case ofα-Al2O3by comparing three methods for sampling candidate geometries in density functional theory calculations: displacing atoms near a naively placed defect, initializing interstitials at high-symmetry points of a Voronoi decomposition, and Bayesian optimization. We find symmetry-breaking distortions for oxygen vacancies in some charge states, and we identify several distinct oxygen split-interstitial geometries that help explain literature discrepancies involving this defect. We also report a surprising and, to our knowledge, previously unknown trigonal geometry favored by aluminum interstitials in some charge states. These new configurations may have transformative impacts on our understanding of defect migration pathways in aluminum-oxide scales protecting metal alloys from corrosion. Overall, the Voronoi scheme appears most effective for sampling candidate interstitial sites because it always succeeded in finding the lowest-energy geometry identified in this study, although no approach found every metastable configuration. Finally, we show that the position of defect levels within the band gap can depend strongly on the defect geometry, underscoring the need to conduct careful searches for ground-state geometries in defect calculations.

Real-Time Exciton Dynamics with Time-Dependent Density-Functional Theory.

Linear-response time-dependent density-functional theory (TDDFT) can describe excitonic features in the optical spectra of insulators and semiconductors, using exchange-correlation (xc) kernels behaving as -1/k^{2} to leading order. We show how excitons can be modeled in real-time TDDFT, using an xc vector potential constructed from approximate, long-range corrected xc kernels. We demonstrate, for various materials, that this real-time approach is consistent with frequency-dependent linear response, gives access to femtosecond exciton dynamics following short-pulse excitations, and can be extended with some caution into the nonlinear regime.

Biomechanical Analysis and Design Method for Patient-Specific Reconstructive Implants for Large Bone Defects of the Distal Lateral Femur.

This study aims to develop a generalizable method for designing a patient-specific reconstructive scaffold implant for a large distal lateral femur defect using finite element (FE) analysis and topology optimization. A 3D solid-core implant for the distal femur defect was designed to withhold the femur load. Data from FE analysis of the solid implant were use for topology optimization to obtain a 'bone scaffold implant' with light-weight internal cavity and surface lattice features to allow for filling with bone material. The bone scaffold implant weighed 69.6% less than the original solid-core implant. The results of FE simulation show that the bone repaired with the bone scaffold implant had lower total displacement (12%), bone plate von Mises stress (34%), bone maximum first principal stress (33%), and bone maximum first principal strain (32%) than did bone repaired with bone cement. The trend in experimental strain with increasing load on the composite femur was greater with bone cement than with the bone scaffold implant. This study presents a generalizable method for designing a patient-specific reconstructive scaffold implant for the distal lateral femur defect that has sufficient strength and space for filling with allograft bone.

Hot-Electron-Mediated Ion Diffusion in Semiconductors for Ion-Beam Nanostructuring.

Ion-beam-based techniques are widely utilized to synthesize, modify, and characterize materials at the nanoscale, with applications from the semiconductor industry to medicine. Interactions of the beam with the target are fundamentally interesting, as they trigger multilength and time-scale processes that need to be quantitatively understood to achieve nanoscale precision. Here we demonstrate for magnesium oxide, as a testbed semiconductor material, that in a kinetic-energy regime in which electronic effects are usually neglected, a proton beam efficiently excites oxygen-vacancy-related electrons. We quantitatively describe the excited-electron distribution and the emerging ion dynamics using first-principles techniques. Contrary to the common picture of charging the defect, we discover that most of the excited electrons remain locally near the oxygen vacancy. Using these results, we bridge time scales from ultrafast electron dynamics directly after impact to ion diffusion over migration barriers in semiconductors and discover a diffusion mechanism that is mediated by hot electrons. Our quantitative simulations predict that this mechanism strongly depends on the projectile-ion velocity, suggesting the possibility of using it for precise sample manipulation via nanoscale diffusion enhancement in semiconductors with a deep, neutral, intrinsic defect.

Production of high-purity neofructooligosaccharides by culture of Xanthophyllomyces dendrorhous.

Neofructooligosaccharides (neo-FOS) were produced in submerged cultures of Xanthophyllomyces dendrorhous. Among the various strains of X. dendrorhous that have intracellular (6)G-fructofuranosidase ((6)G-FFase), BCRC 21346 with high enzyme activity (3.60 U/mL) and BCRC 22367 with low enzyme activity (0.59 U/mL) were investigated in this work. Neo-FOS were generated in a 5-L jar fermenter at 20°C, 100rpm and 2vvm with the pH controlled at 6.9±0.1, using 250g/L of sucrose as the substrate. Through the catalytic action of X. dendrorhous(6)G-FFase on sucrose, monosaccharides as well as neo-FOS were produced. A portion of these monosaccharides was consumed by the yeast cells. However, the production of monosaccharides was low in concentration in culture with low (6)G-FFase activity, indicating they might be used up concurrently during the fermentation. Consequently, neo-FOS at a purity of up to 87.4% could be obtained.

Synthesis and characterization of diporphyrin sensitizers for dye-sensitized solar cells.

Novel porphyrin dimers with broad and strong absorption in the visible and/or near IR regions have been synthesized; the meso-meso-linked porphyrin dimer (YDD1) exhibited the best photovoltaic performance with power conversion efficiency 5.2% under AM 1.5G one solar illumination.

Novel zinc porphyrin sensitizers for dye-sensitized solar cells: synthesis and spectral, electrochemical, and photovoltaic properties.

Novel meso- or beta-derivatized porphyrins with a carboxyl group have been designed and synthesized for use as sensitizers in dye-sensitized solar cells (DSSCs). The position and nature of a bridge connecting the porphyrin ring and carboxylic acid group show significant influences on the spectral, electrochemical, and photovoltaic properties of these sensitizers. Absorption spectra of porphyrins with a phenylethynyl bridge show that both Soret and Q bands are red-shifted with respect to those of porphyrin 6. This phenomenon is more pronounced for porphyrins 3 and 4, which have a pi-conjugated electron-donating group at the meso position opposite the anchoring group. Upon introduction of an ethynylene group at the meso position, the potential at the first oxidation alters only slightly whereas that for the first reduction is significantly shifted to the positive, thus indicating a decreased HOMO-LUMO gap. Quantum-chemical (DFT) results support the spectroelectrochemical data for a delocalization of charge between the porphyrin ring and the amino group in the first oxidative state of diarylamino-substituted porphyrin 5, which exhibits the best photovoltaic performance among all the porphyrins under investigation. From a comparison of the cell performance based on the same TiO(2) films, the devices made of porphyrin 5 coadsorbed with chenodeoxycholic acid (CDCA) on TiO(2) in ratios [5]/[CDCA] = 1:1 and 1:2 have efficiencies of power conversion similar to that of an N3-based DSSC, which makes this green dye a promising candidate for colorful DSSC applications.

Structure-property relationship for two-photon absorbing multiporphyrins: supramolecular assembly of highly-conjugated multiporphyrinic ladders and prisms.

Two-photon absorption (TPA) phenomena of a series of single-strand as well as supramolecular self-assembled ladders and prisms of highly conjugated ethyne bridged multiporphyrin dimer, trimer, and star shaped pentamer have been investigated. The ligand mediated self-assembled supramolecular structures were characterized by UV-visible spectroscopy and small- and wide-angle X-ray scattering (SAXS/WAXS) analysis. The TPA cross section values of multiporphyrins increase nonlinearly from approximately 100 to approximately 18000 GM with an increased number of porphyrin units and elongated pi-conjugation length by virtue of charge transfer and excited-state cumulenic configurations. The observed opposite TPA behavior between their supramolecular ladder and prism configurations necessitates the importance of interstrand interactions between the multiporphyrinic units and the overall shape of the assembly. Furthermore, the diminished TPA cross section of the pentamer, despite the increased pi-conjugation resulting from duplex formation suggests that destabilizing the essential functional configurations at the cost of elongation of pi-delocalization pathway must cause unfavorable effects. We have also shown that one- and two-photon allowed energy-levels of linear multiporphyrins are nearly isoenergetic and the latter transition originates exclusively from the extent of pi-delocalization within the molecule. The identical TPA maximum position of the trimer and pentamer indicates that the TPA of the pentamer arises only from its basic trimer unit in spite of its extended two-dimensional pi-conjugation pathway involving five porphyrinic units.

New synthesis of zinc tetrakis(arylethynyl)porphyrins and substituent effects on their redox chemistry.

Sonogashira coupling of zinc 5,10,15,20-tetraethynylporphyrin with various phenyl iodides under mild conditions afforded good yields of the corresponding zinc porphyrins. This method is applicable to a variety of aryl iodides including meso-substituted iodoporphyrin to form a conjugated star-shaped multiporphyrin. The UV-Vis spectra show that peak broadening, red shifts, and changes in the oscillator strength of absorptions increase with the extension of pi-conjugation. In the electrochemical measurements, the first oxidation of porphyrins 4-9 occurs at potentials in the range +0.89 to +1.08 V, which are comparable to that of ZnTPP (TPP = tetraphenylporphyrin). The first reduction was observed at potentials from -0.73 to -0.89 V, which is anodically shifted by 390-550 mV as compared to that of ZnTPP, and the second reduction occurs at potentials in the range -1.12 to -1.33 V. The para-substituted tetrakis(phenylethynyl)porphyrins show substituent effects on their redox chemistry and exhibit only slight substituent effects in their emission and absorption maxima.