Survey on Resident Education for Surgical Dermatology in South Korea.

BACKGROUND: With the increasing demand for surgical procedures in dermatology, resident education in surgical dermatology has become important for delivering high-quality treatment. However, it remains unclear if a sufficient number of residency programs with quality standards exist, as there has been little research on this subject in South Korea. OBJECTIVE: To identify the status of surgical dermatology education among residents and assess dermatologists' perceptions of the subject. METHODS: A 35-question survey was developed and distributed to all resident training hospitals and local clinics listed by the Korean Society of Dermatologic Surgery. Only third- and fourth-year residents were included and board-certified specialists from training hospitals and local clinics responded to the surveys. RESULTS: Survey participants included 88 residents and 120 specialists of whom one-quarter of the residents attended regular monthly educational sessions. Most residents (93%) participated in cosmetic procedures, and many performed laser therapy. However, the opportunity for toxin or filler injection was rare, with only 12% of the residents having experience with filler injections. In response, 49% of residents and 32% of specialists said that more cosmetic training was required, whereas 28% of residents and 50% of specialists said that more training for both cosmetic and conventional surgeries was necessary. CONCLUSION: The survey demonstrated a need for more training programs in surgical dermatology during residency and a perception gap between residents and specialists. Therefore, developing educational residency programs that focus on basic dermatologic surgery principles and their applications in cosmetic procedures is essential.

Efficacy of Bleomycin Intralesional Injection for Treating Digital Mucous Cysts: A Comparative Study of Corticosteroid Intralesional Injection and Surgical Excision.

BACKGROUND: Sclerotherapy has shown superior efficacy among the nonsurgical options for managing digital mucous cysts (DMC). Notably, previous research has indicated that bleomycin offers a more favorable side-effect profile and similar efficacy to conventional sclerosing agents. OBJECTIVE: This study aimed to assess the efficacy and safety of bleomycin intralesional injection (ILI) for treating DMC through a comparative analysis of corticosteroid ILI and surgical excision. METHODS: We retrospectively reviewed electronic medical records and clinical photographs. Telephone interviews were conducted to further investigate long-term treatment efficacy, safety, and overall treatment satisfaction. RESULTS: Ten patients underwent surgical excision, and 13 and 15 patients received bleomycin and corticosteroid ILI, respectively. Both surgical excision and bleomycin ILI demonstrated superior treatment efficacy compared to corticosteroid ILI. No statistically significant difference in the treatment effectiveness between surgical excision and bleomycin ILI was observed. No significant adverse effects were observed. In the survey, the level of satisfaction was the highest for bleomycin ILI, followed by surgical excision and corticosteroid ILI. CONCLUSION: This study revealed that bleomycin ILI exhibits a treatment efficacy higher than that of corticosteroid ILI and slightly lower than that of surgical excision, without any side effects. Therefore, bleomycin ILI is a safe and effective therapeutic option for the treatment of DMC.

Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor.

Atomic layer deposition (ALD) is a promising deposition method to precisely control the thickness and metal composition of oxide semiconductors, making them attractive materials for use in thin-film transistors because of their high mobility and stability. However, multicomponent deposition using ALD is difficult to control without understanding the growth mechanisms of the precursors and reactants. Thus, the adsorption and surface reactivity of various precursors must be investigated. In this study, InGaO (IGO) semiconductors were deposited by plasma-enhanced atomic layer deposition (PEALD) using two sets of In and Ga precursors. The first set of precursors consisted of In(CH3)3[CH3OCH2CH2NHtBu] (TMION) and Ga(CH3)3[CH3OCH2CH2NHtBu]) (TMGON), denoted as TM-IGO; the other set of precursors was (CH3)2In(CH2)3N(CH3)2 (DADI) and (CH3)3Ga (TMGa), denoted as DT-IGO. We varied the number of InO subcycles between 3 and 19 to control the chemical composition of the ALD-processed films. The indium compositions of TM-IGO and DT-IGO thin films increased as the InO subcycles increased. However, the indium/gallium metal ratios of TM-IGO and DT-IGO were quite different, despite having the same InO subcycles. The steric hindrance of the precursors and different densities of the adsorption sites contributed to the different TM-IGO and DT-IGO metal ratios. The electrical properties of the precursors, such as Hall characteristics and device parameters of the thin-film transistors, were also different, even though the same deposition process was used. These differences might have resulted from the growth behavior, anion/cation ratios, and binding states of the IGO thin films.

Reduction of Persistent Photoconduction with IGZO/ZnON-Tandem-Structure Visible-Near-Infrared Phototransistors.

Indium-gallium-zinc oxide- and zinc oxynitride-based heterojunction phototransistors were successfully demonstrated to control the persistent photoconduction (PPC) effect and be also responded sensitively at the range from visible to near-infrared. ZnON plays a key role in extending the spectral response at various frequencies of operation. The devices show significantly different photoresponse and photorecovery characteristics depending on the number of stacked layers of IGZO and ZnON. After negative bias and illumination stress was applied to the devices for 1 h, tandem-structure-based phototransistors recovered remarkably better than single-component IGZO devices. We suggest that the improvements to photoresponse and photorecovery result from the presence of potential wells between two IGZO layers and the energy band alignment of the tandem structure.

Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD.

Amorphous InGaZnOx (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel displays due to their beneficial properties. However, the mobility of ∼10 cm2/(V s) for the a-IGZO TFTs used in commercial organic light-emitting diode TVs is not satisfactory for high-resolution display applications such as virtual and augmented reality applications. In general, the electrical properties of amorphous oxide semiconductors are strongly dependent on their chemical composition; the indium (In)-rich IGZO achieves a high mobility of 50 cm2/(V s). However, the In-rich IGZO TFTs possess another issue of negative threshold voltage owing to intrinsically high carrier density. Therefore, the development of an effective way of carrier density suppression in In-rich IGZO will be a key strategy to the realization of practical high-mobility a-IGZO TFTs. In this study, we report that In-rich IGZO TFTs with vertically stacked InOx, ZnOx, and GaOx atomic layers exhibit excellent performances such as saturation mobilities of ∼74 cm2/(V s), threshold voltage of -1.3 V, on/off ratio of 8.9 × 108, subthreshold swing of 0.26 V/decade, and hysteresis of 0.2 V, while keeping a reasonable carrier density of ∼1017 cm-3. We found that the vertical dimension control of IGZO active layers is critical to TFT performance parameters such as mobility and threshold voltage. This study illustrates the potential advantages of atomic layer deposition processes for fabricating ultrahigh-mobility oxide TFTs.

Ultra-High-Speed Intense Pulsed-Light Irradiation Technique for High-Performance Zinc Oxynitride Thin-Film Transistors.

In this study, we investigated the effects of intense pulsed light (IPL) on the electrical performance properties of zinc oxynitride (ZnON) thin films and thin-film transistors (TFTs) with different irradiation energies. Using the IPL process on the oxide/oxynitride semiconductors has various advantages, such as an ultrashort process time (∼100 ms) and high electrical performance without any additional thermal processes. As the irradiation energy of IPL increased from 30 to 50 J/cm2, the carrier concentration of ZnON thin films decreased from 5.07 × 1019 to 9.96 × 1016 cm-3 and the electrical performance of TFTs changed significantly, which is optimized at an energy of 40 J/cm2 (field effect mobility of 48.4 cm2 V-1 s-1). The properties of TFTs, such as mobility, subthreshold swing, and hysteresis, and the stability of the device under negative bias degraded as the irradiation energy increased. This degradation contributed to the change in nitrogen-related bonding states, such as nonstoichiometric Zn xN y and N-N bonding, rather than that of oxygen-related bonding states and the atomic composition of ZnON thin films. Optimization of the IPL process in our results makes it possible to produce high-performance ZnON TFTs very fast without any additional thermal treatment, which indicates that highly productive TFT fabrication can be achieved via this process.

Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants.

SnO x thin films were successfully deposited by the thermal atomic layer deposition (ALD) method using N, N'- tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and ozone and water as reactants. The growth of SnO and SnO2 films could be easily controlled by employing different reactants and utilizing different ozone and water concentrations, respectively. The formation of both SnO and SnO2 films exhibited typical surface-limiting reaction characteristics, although their growth behaviors differ from one another. The combined studies of density functional theory calculations and experimental analyses showed that the difference in growth behavior of the SnO and SnO2 films can be attributed to the stability of ozone and water on the SnO2 and SnO films. SnO and SnO2 films have different crystal structures and both films were crystallized from the amorphous to polycrystalline states following an increase in the deposition temperature. The absorbance and refractive index of the thin films were investigated using ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry (SE), respectively. SnO x films formed using ozone and water as a reactant showed an optical band gap of 3.60-3.17 eV and 2.24-2.30 eV and refractive indices of ∼2.0 and ∼2.6, respectively, which correspond to values typical of SnO2 and SnO. The bilayer structure of SnO/SnO2 was successfully fabricated on indium tin oxide (ITO) glass with nickel as a top electrode at 100 °C. The SnO/SnO2 bilayer exhibited diode characteristics with a current rectification ratio of 15. Our results present a simple but highly versatile growth method for producing multilayer oxide films with electronic properties that can be finely controlled.

Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Band-Tunable Semiconductor.

Amorphous oxide semiconductors have attracted attention in electronic device applications because of their high electrical uniformity over large areas, high mobility, and low-temperature process. However, photonic applications of oxide semiconductors are highly limited because of their larger band gap (over 3.0 eV). Here, we propose low band gap zinc oxynitride semiconductors not only because of their high electrical performance but also their high photoresponsivity in the vis-NIR regions. The optical band gap of zinc oxynitride films, which is in the range of 0.95-1.24 eV, could be controlled easily by changing oxygen and nitrogen ratios during reactive sputtering. Band gap tuned zinc oxynitride-based phototransistors showed significantly different photoresponse following both threshold voltage and drain current changes due to variation in nitrogen-related defect sites.

Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors.

Photochemical reactions in inorganic films, which can be promoted by the addition of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy, even at low temperatures. We performed thermal-induced, deep ultraviolet-based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar variations in the nanostructures with phase transformation and densification. The separated Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was stabilized remarkably by the reduction of oxygen defects and by the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm2 V-1 s-1.

The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties.

Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via studying the resonant interaction between anions or vacancies in ZnON. It is found that the incorporation of nitrogen increases the concentration of nitrogen vacancies (VN+s), which generate larger concentrations of free electrons with increased mobility. However, a critical amount of nitrogen exists, above which electrically inactive divacancy (VN-VN)0 forms, thus reducing the number of carriers and their mobility. The presence of nitrogen anions also reduces the relative content of oxygen anions, therefore diminishing the probability of forming O-O dimers (peroxides). The latter is well known to accelerate device degradation under NBIS. Calculations indicate that a balance between device performance and NBIS stability may be achieved by optimizing the nitrogen to oxygen anion ratio. Experimental results confirm that the degradation of the TFTs with respect to NBIS becomes less severe as the nitrogen content in the film increases, while the device performance reaches an intermediate peak, with field effect mobility exceeding 50 cm2/Vs.

Methylaluminoxane-Free Chromium Catalytic System for Ethylene Tetramerization.

Ethylene tetramerization catalyst systems comprising a Cr(III) complex containing PNP ligands and methylaluminoxane (MAO) are useful for the production of 1-octene. However, a concern with these systems is the use of expensive MAO in excess. Herein, we report a catalytic system that avoids the use of MAO. Metathesis of CrCl3(THF)3 and [(CH3CN)4Ag]+[B(C6F5)4]- afforded [L4CrIIICl2]+[B(C6F5)4]- (L = CH3CN or tetrahydrofuran (THF)), which was converted to [(PNP)CrCl2L2]+[B(C6F5)4]-, where PNP is iPrN(PPh2)2 (1) or [CH3(CH2)16]2CHN(PPh2)2 (2). The molecular structures of [(THF)4CrIIICl2]+[B(C6F5)4]- and [1-CrCl2(THF)2]+[B(C6F5)4]- were unambiguously determined by X-ray crystallography. The cationic (PNP)CrIII complexes paired with [B(C6F5)4]- anions, that is, [(PNP)CrCl2(CH3CN)2]+[B(C6F5)4]-, exhibited high activity in chlorobenzene when activated with common trialkylaluminum species (Me3Al, Et3Al, and iBu3Al). The activities and selectivity were comparable to those of the original MAO-based Sasol system (1-CrCl3/MAO). When activated with Et3Al or iBu3Al, the Cr complex, [2-CrCl2(CH3CN)2]+[B(C6F5)4]-, which bears long alkyl chains, showed high activity in the more desirable methylcyclohexane solvent (89 kg/g-Cr/h) and much higher activity in cyclohexene (168 kg/g-Cr/h). Other advantages of the [2-CrCl2(CH3CN)2]+[B(C6F5)4]-/Et3Al system in cyclohexene were negligible catalyst deactivation, formation of only a negligible amount of polyethylene side product (0.3%), and formation of fewer unwanted side products above C10. The [B(C6F5)4]- anion is compatible with trialkylaluminum species once it is not paired with a trityl cation. Hence, [(PNP)CrCl2(CH3CN)2]+[B(C6F5)4]-/Et3Al exhibited a significantly higher activity than that of a previously reported system composed of [Ph3C]+[B(C6F5)4]-, that is, 1/CrCl3(THF)3/[Ph3C]+[B(C6F5)4]-/Et3Al.

Correction to "Methylaluminoxane-Free Chromium Catalytic System for Ethylene Tetramerization".

[This corrects the article DOI: 10.1021/acsomega.6b00506.].