Comparison of Sb2O3 and Sb2O3/SiO2 Double Stacked pH Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structure.

In this study, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3/SiO2 double stacked sensing membranes were fabricated with pH sensing capability. The results indicate that Sb2O3/SiO2 double stacked membranes with appropriate annealing had better material quality and sensing performance than Sb2O3 membranes did. To investigate the influence of double stack and annealing, multiple material characterizations and sensing measurements on membranes including of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were conducted. These analyses indicate that double stack could enhance crystallization and grainization, which reinforced the surface sites on the membrane. Therefore, the sensing capability could be enhanced, Sb2O3/SiO2-based with appropriate annealing show promises for future industrial ion sensing devices.

Influence of Y Doping on WO3 Membranes Applied in Electrolyte-Insulator-Semiconductor Structures.

In this paper, tungsten oxide (WO3) is deposited on a silicon substrate applied in electrolyte-insulator-semiconductor structures for pH sensing devices. To boost the sensing performance, yttrium (Y) is doped into WO3 membranes, and annealing is incorporated in the fabrication process. To investigate the effects of Y doping and annealing, multiple material characterizations including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atom force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) are performed. Material analysis results indicate that annealing and Y doping can increase crystallinity, suppress defects, and enhance grainization, thereby strengthening membrane sensing capabilities in terms of sensitivity, linearity, and reliability. Because of their stable response, high reliability, and compact size, Y-doped WO3 membranes are promising for future biomedical applications.

Comparison of ZnO, Al2O3, AlZnO, and Al2O3-Doped ZnO Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structures.

In this study, ZnO, AlZnO, Al2O3, and Al2O3-doped ZnO-sensing membranes were fabricated in electrolyte-insulator-semiconductor (EIS) structures. Multiple material analyses indicate that annealing at an appropriate temperature of 500 °C could enhance crystallizations, passivate defects, and facilitate grainizations. Owing to their material properties, both the pH-sensing capability and overall reliability were optimized for these four types of membranes. The results also revealed that higher Al amounts increased the surface roughness values and enhanced larger crystals and grains. Higher Al compositions resulted in higher sensitivity, linearity, and stability in the membrane.

Comparison of NH3 and N2O Plasma Treatments on Bi2O3 Sensing Membranes Applied in an Electrolyte-Insulator-Semiconductor Structure.

In this study, bismuth trioxide (Bi2O3) membranes in an electrolyte-insulator-semiconductor (EIS) structure were fabricated with pH sensing capability. To optimize the sensing performance, the membranes were treated with two types of plasma-NH3 and N2O. To investigate the material property improvements, multiple material characterizations were conducted. Material analysis results indicate that plasma treatments with appropriate time could enhance the crystallization, remove the silicate and facilitate crystallizations. Owing to the material optimizations, the pH sensing capability could be greatly boosted. NH3 or N2O plasma treated-Bi2O3 membranes could reach the pH sensitivity around 60 mV/pH and show promise for future biomedical applications.

Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane.

In this study, the effects of magnesium (Mg) doping and Ammonia (NH3) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH3 plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH3 plasma treatment could superpositionally enhance crystallization in fine nanostructures, and strengthen chemical bindings. Results indicate these material improvements increased pH sensing capability significantly. Plasma-treated Mg-doped InGaZnO pH sensing membranes show promise for future pH sensing biosensors.

Comparison of Magnesium and Titanium Doping on Material Properties and pH Sensing Performance on Sb2O3 Membranes in Electrolyte-Insulator-Semiconductor Structure.

In this research, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3 sensing membranes were fabricated. The results indicate that Mg doping and Ti-doped Sb2O3 membranes with appropriate annealing had improved material quality and sensing performance. Multiple material characterizations and sensing measurements of Mg-doped and Ti doping on Sb2O3 sensing membranes were conducted, including of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). These detailed studies indicate that silicate and defects in the membrane could be suppressed by doping and annealing. Moreover, compactness enhancement, crystallization and grainization, which reinforced the surface sites on the membrane and boosted the sensing factor, could be achieved by doping and annealing. Among all of the samples, Mg doped membrane with annealing at 400 °C had the most preferable material properties and sensing behaviors. Mg-doped Sb2O3-based with appropriate annealing are promising for future industrial ionsensing devices and for possible integration with Sb2O3-based semiconductor devices.