Metal nanoparticle film-based room temperature Coulomb transistor.

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles.

Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging energy. Thus, a Coulomb-energy gap emerges during transport experiments that can be shifted by electric fields, allowing for charge transport whenever energy levels of neighboring particles match. Hence, the state of the device changes sequentially between conducting and non-conducting instead of just one transition from conducting to pinch-off as in semiconductors. To exploit this behavior for field-effect transistors, it is necessary to use uniform nanoparticles in ordered arrays separated by well-defined tunnel barriers. In this work, CoPt nanoparticles with a narrow size distribution are synthesized by colloidal chemistry. These particles are deposited via the scalable Langmuir-Blodgett technique as ordered, homogeneous monolayers onto Si/SiO2 substrates with pre-patterned gold electrodes. The resulting nanoparticle arrays are limited to stripes of adjustable lengths and widths. In such a defined channel with a limited number of conduction paths the current can be controlled precisely by a gate voltage. Clearly pronounced Coulomb oscillations are observed up to temperatures of 150 K. Using such systems as field-effect transistors yields unprecedented oscillating current modulations with on/off-ratios of around 70%.

Synthesis and Characterization of Monodisperse Metallodielectric SiO2@Pt@SiO2 Core-Shell-Shell Particles.

Metallodielectric nanostructured core-shell-shell particles are particularly desirable for enabling novel types of optical components, including narrow-band absorbers, narrow-band photodetectors, and thermal emitters, as well as new types of sensors and catalysts. Here, we present a facile approach for the preparation of submicron SiO2@Pt@SiO2 core-shell-shell particles. As shown by transmission and scanning electron microscopy, the first steps of this approach allow for the deposition of closed and almost perfectly smooth platinum shells onto silica cores via a seeded growth mechanism. By choosing appropriate conditions, the shell thickness could be adjusted precisely, ranging from ∼3 to ∼32 nm. As determined by X-ray diffraction, the crystalline domain sizes of the polycrystalline metal shells were ∼4 nm, regardless of the shell thickness. The platinum content of the particles was determined by atomic absorption spectroscopy and for thin shells consistent with a dense metal layer of the TEM-measured thickness. In addition, we show that the roughness of the platinum shell strongly depends on the storage time of the gold seeds used to initiate reductive platinum deposition. Further, using polyvinylpyrrolidone as adhesion layer, it was possible to coat the metallic shells with very homogeneous and smooth insulating silica shells of well-controlled thicknesses between ∼2 and ∼43 nm. After depositing the particles onto silicon substrates equipped with interdigitated electrode structures, the metallic character of the SiO2@Pt particles and the insulating character of the SiO2 shells of the SiO2@Pt@SiO2 particles were successfully demonstrated by charge transport measurements at variable temperatures.

Metal Domain Size Dependent Electrical Transport in Pt-CdSe Hybrid Nanoparticle Monolayers.

Thin films prepared of semiconductor nanoparticles are promising for low-cost electronic applications such as transistors and solar cells. One hurdle for their breakthrough is their notoriously low conductivity. To address this, we precisely decorate CdSe nanoparticles with platinum domains of one to three nanometers in diameter by a facile and robust seeded growth method. We demonstrate the transition from semiconductor to metal dominated conduction in monolayered films. By adjusting the platinum content in such solution-processable hybrid, oligomeric nanoparticles the dark currents through deposited arrays become tunable while maintaining electronic confinement and photoconductivity. Comprehensive electrical measurements allow determining the reigning charge transport mechanisms.

Solution-Grown Nanowire Devices for Sensitive and Fast Photodetection.

Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly onto interdigitating platinum electrodes serve as catalysts in the following solution-liquid-solid synthesis of quantum nanowires directly on immersed substrates under mild conditions at low temperature. This fast and simple preparation process leads to a photodetector device with a film of nanowires of limited thickness bridging the electrode gaps, in which a high fraction of individual nanowires are electrically contacted and can be exposed to light at the same time. The high sensitivity of the photodetector device can be expressed by its on/off ratio or its photosensitivity of more than 10(7) over a broad wavelength range up to about 700 nm. The specific detectivity and responsivity are determined to D* = 4 × 10(13) Jones and R = 0.32 A/W, respectively. The speed of the device reflects itself in a 3 dB frequency above 1 MHz corresponding to rise and fall times below 350 ns. The remarkable combination of a high sensitivity and a fast response is attributed to depletion regions inside the nanowires, tunnel-junction barriers between nanowires, and Schottky contacts at the electrodes, where all of these features are strongly influenced by the number of photogenerated charge carriers.