Room-temperature electroluminescence in the mid-infrared (2-3 microm) from bulk chromium-doped ZnSe.

Electroluminescence associated with impact excitation or ionization of deep Cr(2+) impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 microm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.

Generation of mid-infrared radiation by self-difference frequency mixing in chromium-doped zinc selenide.

We report what we believe to be the first demonstration of mid-infrared generation (approximately 9 microm) by self-difference frequency generation in Fresnel birefringence quasi-phase-matched Cr:ZnSe laser slabs.