Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch.

Photonic neural network has been sought as an alternative solution to surpass the efficiency and speed bottlenecks of electronic neural network. Despite that the integrated Mach-Zehnder Interferometer (MZI) mesh can perform vector-matrix multiplication in photonic neural network, a programmable in-situ nonlinear activation function has not been proposed to date, suppressing further advancement of photonic neural network. Here, we demonstrate an efficient in-situ nonlinear accelerator comprising a unique solution-processed two-dimensional (2D) MoS2 Opto-Resistive RAM Switch (ORS), which exhibits tunable nonlinear resistance switching that allow us to introduce nonlinearity to the photonic neuron which overcomes the linear voltage-power relationship of typical photonic components. Our reconfigurable scheme enables implementation of a wide variety of nonlinear responses. Furthermore, we confirm its feasibility and capability for MNIST handwritten digit recognition, achieving a high accuracy of 91.6%. Our accelerator constitutes a major step towards the realization of in-situ photonic neural network and pave the way for the integration of photonic integrated circuits (PIC).

Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability.

Memtransistors that combine the properties of transistor and memristor hold significant promise for in-memory computing. While superior data storage capability is achieved in memtransistors through gate voltage-induced conductance modulation, the lateral device configuration would not only result in high write bias, which compromises the power efficiency, but also suffers from unsuccessful memory reset that leads to reliability concerns. To circumvent such performance limitations, an advanced physics-based model is required to uncover the dynamic resistive switching behavior and deduce the key driving parameters for the switching process. This work demonstrates a self-consistent physics-based model which incorporates the often-overlooked effects of lattice temperature, vacancy dynamics, and channel electrostatics to accurately solve the interaction between gate potential, ions, and carriers on the memristive switching mechanism. The completed model is carefully calibrated with an ambipolar WSe2 memtransistor and hence enables the investigation of the carrier polarity effect (electrons vs holes) on vacancy transport. Nevertheless, the validity of the model can be extended to different materials by a simple material-dependent parameter modification. Building upon the existing understanding of Schottky barrier height modulation, our study reveals three key insights─leveraging threshold voltage shifts to lower write bias; optimizing lattice temperature distribution and read bias polarity to achieve successful memory state recovery; engineering contact work function to overcome the detrimental parasitic current flow in short channel ambipolar memtransistors. Therefore, understanding the significant correlation between the switching mechanisms, different material systems, and device structures allows performance optimization of operating modes and device designs for future memtransistors-based computing systems.

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing.

Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS2 memristor arrays are reported. The MoS2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration.

3D monolithic integration of logic and memory has been the most sought after solution to surpass the Von Neumann bottleneck, for which a low-temperature processed material system becomes inevitable. Two-dimensional materials, with their excellent electrical properties and low thermal budget are potential candidates. Here, we demonstrate a low-temperature hybrid co-integration of one-transistor-one-resistor memory cell, comprising a surface functionalized 2D WSe2 p-FET, with a solution-processed WSe2 Resistive Random Access Memory. The employed plasma oxidation technique results in a low Schottky barrier height of 25 meV with a mobility of 230 cm2 V-1 s-1, leading to a 100x performance enhanced WSe2 p-FET, while the defective WSe2 Resistive Random Access Memory exhibits a switching energy of 2.6 pJ per bit. Furthermore, guided by our device-circuit modelling, we propose vertically stacked channel FETs for high-density sub-0.01 µm2 memory cells, offering a new beyond-Si solution to enable 3-D embedded memories for future computing systems.

The Role of Oxygen Atoms on Excitons at the Edges of Monolayer WS2.

We clarify that the chemisorption of oxygen atoms at the edges is a key contributor to the frequently observed edge enhancement and spatial non-uniformities of photoluminescence (PL) in WS2 monolayers. Here we have investigated with momentum- and real-space nanoimaging of the chemical and electronic density inhomogeneity of WS2 flakes. Our finding from a large panoply of techniques together with density functional theory calculation confirms that the oxygen chemisorption leads to the electron accumulation at the edges. This facilitates the trion dominance of PL at the edges of WS2 flakes. Our results highlight and unravel the significance of chemisorbed oxygen at the edges in the PL emission and electronic structure of WS2, providing a viable path to enhance the performance of transition-metal-dichalcogenide-based devices.