Direct Ink Writing of Low-Concentration MXene/Aramid Nanofiber Inks for Tunable Electromagnetic Shielding and Infrared Anticounterfeiting Applications.

MXene inks offer a promising avenue for the scalable production and customization of printing electronics. However, simultaneously achieving a low solid content and printability of MXene inks, as well as mechanical flexibility and environmental stability of printed objects, remains a challenge. In this study, we overcame these challenges by employing high-viscosity aramid nanofibers (ANFs) to optimize the rheology of low-concentration MXene inks. The abundant entangled networks and hydrogen bonds formed between MXene and ANF significantly increase the viscosity and yield stress up to 103 Pa·s and 200 Pa, respectively. This optimization allows the use of MXene/ANF (MA) inks at low concentrations in direct ink writing and other high-viscosity processing techniques. The printable MXene/ANF inks with a high conductivity of 883.5 S/cm were used to print shields with customized structures, achieving a tunable electromagnetic interference shielding effectiveness (EMI SE) in the 0.2-48.2 dB range. Furthermore, the MA inks exhibited adjustable infrared (IR) emissivity by changing the ANF ratio combined with printing design, demonstrating the application for infrared anticounterfeiting. Notably, the printed MXene/ANF objects possess outstanding mechanical flexibility and environmental stability, which are attributed to the reinforcement and protection of ANF. Therefore, these findings have significant practical implications as versatile MXene/ANF inks can be used for customizable, scalable, and cost-effective production of flexible printed electronics.

Laser CVD Growth of Uniquely <010>-oriented ß-Ga2 O3 Films on Quartz Substrate with Ultrafast Photoelectric Response.

The oriented growth of ß-Ga2 O3 films has triggered extensive interest due to the remarkable and complex anisotropy found in the ß-Ga2 O3 bulks. Remarkable properties, including stronger solar-blind ultraviolet (SBUV) absorption, better mobility, and higher thermal conductivity, are usually observed along <010> direction as compared to other low-index axes. So far, <010>-oriented ß-Ga2 O3 film growth has been hindered by the lack of suitable substrates and higher surface energy of the (010) crystal plane. Herein, the first growth of uniquely <010>-oriented ß-Ga2 O3 films on quartz substrates by laser chemical vapor deposition (LCVD) are reported. By investigating the effects of deposition temperature (Tdep ) and O2 flow rate (RO2 ) on the growth of ß-Ga2 O3 films, it is found that the formation of <010> orientation is closely related to the higher stability of oxygen close-packed planes under O-rich condition. As a result, a grain size of up to ≈2 µm and a deposition rate of up to ≈ 40 µm h-1 are obtained. Metal-semiconductor-metal (MSM) type detector based on <010>-oriented ß-Ga2 O3 film exhibits ultra-fast response speed, 1-2 orders of magnitude higher than those of most detectors based on ß-Ga2 O3 films with other orientations.

Enhanced Electromagnetic Shielding and Thermal Management Properties in MXene/Aramid Nanofiber Films Fabricated by Intermittent Filtration.

High-efficiency electromagnetic interference (EMI) shielding and heat dissipation synergy materials with flexible, robust, and environmental stability are urgently demanded in next-generation integration electronic devices. In this work, we report the lamellar MXene/Aramid nanofiber (ANF) composite films, which establish a nacre-like structure for EMI shielding and heat dissipation by using the intermittent filtration strategy. The MXene/ANF composite film filled with 50 wt % MXene demonstrates enhanced mechanical properties with a strength of 230.5 MPa, an elongation at break of 6.2%, and a toughness of 11.8 MJ·m3 (50 wt % MXene). These remarkable properties are attributed to the hydrogen bonding and highly oriented structure. Furthermore, due to the formation of the MXene conductive network, the MXene/ANF composite film shows an outstanding conductivity of 624.6 S/cm, an EMI shielding effectiveness (EMI SE) of 44.0 dB, and a superior specific SE value (SSE/t) of 18847.6 dB·cm2/g, which is better than the vacuum filtration film. Moreover, the MXene/ANF composite film also shows a great thermal conductivity of 0.43 W/m·K. The multifunctional MXene/ANF composite films with high-performance EMI shielding, heat dissipation, and joule heating show great potential in the field of aerospace, military, microelectronics, microcircuit, and smart wearable electronics.

Scalable Assembly of High-Quality Graphene Films via Electrostatic-Repulsion Aligning.

Assembling pristine graphene into freestanding films featuring high electrical conductivity, superior flexibility, and robust mechanical strength aims at meeting the all-around high criteria of new-generation electronics. However, voids and defects produced in the macroscopic assembly process of graphene nanosheets severely degrade the performance of graphene films, and mechanical brittleness often limits their applications in wide scenarios. To address such challenges, an electrostatic-repulsion aligning strategy is demonstrated to produce highly conductive, ultraflexible, and multifunctional graphene films. Typically, the high electronegativity of titania nanosheets (TiNS) induces the aligning of negatively charged graphene nanosheets via electrostatic repulsion in the film assembly. The resultant graphene films show fine microstructure, enhanced mechanical properties, and improved electrical conductivity up to 1.285 × 105 S m-1 . Moreover, the graphene films can withstand 5000 repeated folding without structural damage and electrical resistance fluctuation. These comprehensive improved properties, combined with the facile synthesis method and scalable production, make these graphene films a promising platform for electromagnetic interference (EMI) shielding and thermal-management applications in smart and wearable electronics.

Bridging sheet size controls densification of MXene films for robust electromagnetic interference shielding.

Numerous voids among the incompact layer-structure of MXene films result in their low ambient stability and poor innate conductivity for electromagnetic interference (EMI) shielding. Herein, we report a bridging-sheet-size-controlled densification process of MXene films by applying graphene oxide (GO) as a bridging agent. Specifically, the sheet size of GO is tailored to quantify a negative correlation of sheet size with densification for directing the preparation of most compact MXene-GO films. Benefiting from the shortest electron-transport-distance in the most compact structure, the conductivity of the MXene-GO film achieves 1.7 times (∼1.6 × 105 S/m) that of MXene film. The EMI shielding performance (5.2 × 106 dB/m) reaches the record-value among reported MXene films at 10 µm-scale thickness. Moreover, the compact structure boosts the ambient stability of MXene-GO films where the conductivity and EMI shielding performance remain 88.7% and 90.0% after 15 days, respectively. The findings rationale the structure-activity relationship of compact MXene films for flexible electronics.

Concurrent Enhancement of Breakdown Strength and Dielectric Constant in Poly(vinylidene Fluoride) Film with High Energy Storage Density by Ultraviolet Irradiation.

Polyvinylidene fluoride (PVDF) film with high energy storage density has exhibited great potential for applications in modern electronics, particle accelerators, and pulsed lasers. Typically, dielectric/ferroelectric properties of PVDF film have been tailored for energy storage through stretching, annealing, and defect modification. Here, PVDF films were prepared by the solution casting method followed by an ultraviolet (UV) irradiation process, with special emphasis on how such treatment influences their dielectric and energy storage properties. Upon UV irradiation, the dielectric constant and breakdown strength of the PVDF film were enhanced simultaneously. A high energy density of 18.6 J/cm3, along with a charge-discharge efficiency of 81% at 600 MV/m, was achieved in PVDF after exposure to UV for 15 min. This work may provide a simple and yet effective route to enhance energy storage density of PVDF-based polymers.

The Dispersion and Coagulation of Negatively Charged Ca2Nb3O10 Perovskite Nanosheets in Sodium Alginate Dispersion.

Chemically exfoliated nanosheets have been extensively employed as functional nanofillers for the fabrication of polymer nanocomposites due to their remarkable electrical, magnetic and optical properties. However, achieving a good dispersion of charged nanosheets in polymer matrix, which will determine the performance of polymer nanocomposites, remains a challenge. Herein, we investigated the dispersion and aggregation behavior of negatively charged Ca2Nb3O10 (CNO) perovskite nanosheets in negatively charged sodium alginate (SA) aqueous dispersion using dynamic light scattering (DLS). When CNO nanosheets meet with SA, aggregation and coagulation inevitably occurred owing to the absorption of SA on nanosheets. By controlling the electrostatic attraction between positively charged poly(ethylene imine) (PEI) and negatively charged SA, the charge density and hydrodynamic size of SA can be tuned to enable the good dispersion of CNO nanosheets in SA. This result may provide a new strategy to achieve the good dispersion of charged nanosheets in charged polymers for the rational design of multifunctional nanocomposites.

High-throughput growth of HfO2 films using temperature-gradient laser chemical vapor deposition.

The use of hafnia (HfO2) has facilitated recent advances in high-density microchips. However, the low deposition rate, poor controllability, and lack of systematic research on the growth mechanism limit the fabrication efficiency and further development of HfO2 films. In this study, the high-throughput growth of HfO2 films was realized via laser chemical vapor deposition using a laser spot with a large gradient temperature distribution (100 K mm-1), in order to improve the experimental efficiency and controllability of the entire process. HfO2 films fabricated by a single growth process could be divided into four regions with different morphologies, and discerned for deposition temperatures increasing from 1300 K to 1600 K. The maximum deposition rate reached 362 µm h-1, which was 102 to 104 times higher than that obtained using existing deposition methods. The dielectric constants of high-throughput HfO2 films were in the range of 16-22, which satisfied the demand of replacing the traditional SiO2 layer for a new generation of microchips.

Aqueous MXene/Xanthan Gum Hybrid Inks for Screen-Printing Electromagnetic Shielding, Joule Heater, and Piezoresistive Sensor.

MXenes have exhibited potential for application in flexible devices owing to their remarkable electronic, optical, and mechanical properties. Printing strategies have emerged as a facile route for additive manufacturing of MXene-based devices, which relies on the rational design of functional inks with appropriate rheological properties. Herein, aqueous MXene/xanthan gum hybrid inks with tunable viscosity, excellent printability, and long-term stability are designed. Screen-printed flexible MXene films using such hybrid inks exhibit a high conductivity up to 4.8 × 104  S m-1 , which is suitable to construct multifunctional devices mainly including electromagnetic shielding, Joule heaters, and piezoresistive sensors. The average electromagnetic interference (EMI) shielding value can reach to 40.1 dB. In the Joule heater, the heating rate of printed MXene film can reach 20 °C s-1 under a driving voltage of 4 V, with a highest steady-state temperature of 130.8 °C. An MXene-based piezoresistive sensor prepared by the printing interdigital electrode also presents good sensing performance with a short response time of 130 ms and wide pressure region up to 30 kPa. As a result, screen-printed MXene film exhibits reinforced multifunctional performance, which is promising for application in the next-generation of intelligent and wearable devices.

Flexible high-performance microcapacitors enabled by all-printed two-dimensional nanosheets.

Chemically exfoliated nanosheets have exhibited great potential for applications in various electronic devices. Solution-based processing strategies such as inkjet printing provide a low-cost, environmentally friendly, and scalable route for the fabrication of flexible devices based on functional inks of two-dimensional nanosheets. In this study, chemically exfoliated high-k perovskite nanosheets (i.e., Ca2Nb3O10 and Ca2NaNb4O13) are well dispersed in appropriate solvents to prepare printable inks, and then, a series of microcapacitors with Ag and graphene electrodes are printed. The resulting microcapacitors, Ag/Ca2Nb3O10/Ag, graphene/Ca2Nb3O10/graphene, and graphene/Ca2NaNb4O13/graphene, demonstrate high capacitance densities of 20, 80, and 150 nF/cm2 and high dielectric constants of 26, 110, and 200, respectively. Such dielectric enhancement in the microcapacitors with graphene electrodes is possibly attributed to the dielectric/graphene interface. In addition, these microcapacitors also exhibit good insulating performance with a moderate electrical breakdown strength of approximately 1 MV/cm, excellent flexibility, and thermal stability up to 200 â„ƒ. This work demonstrates the potential of high-k perovskite nanosheets for additive manufacturing of flexible high-performance dielectric capacitors.

The Wet-Oxidation of a Cu(111) Foil Coated by Single Crystal Graphene.

The wet-oxidation of a single crystal Cu(111) foil is studied by growing single crystal graphene islands on it followed by soaking it in water. 18 O-labeled water is also used; the oxygen atoms in the formed copper oxides in both the bare and graphene-coated Cu regions come from water. The oxidation of the graphene-coated Cu regions is enabled by water diffusing from the edges of graphene along the bunched Cu steps, and along some graphene ripples where such are present. This interfacial diffusion of water can occur because of the separation between the graphene and the "step corner" of bunched Cu steps. Density functional theory simulations suggest that adsorption of water in this gap is thermodynamically stable; the "step-induced-diffusion model" also applies to graphene-coated Cu surfaces of various other crystal orientations. Since bunched Cu steps and graphene ripples are diffusion pathways for water, ripple-free graphene is prepared on ultrasmooth Cu(111) surfaces and it is found that the graphene completely shields the underlying Cu from wet-oxidation. This study greatly deepens the understanding of how a graphene-coated copper surface is oxidized, and shows that graphene completely prevents the oxidation when that surface is ultrasmooth and when the graphene has no ripples or wrinkles.

Universal Oriented van der Waals Epitaxy of 1D Cyanide Chains on Hexagonal 2D Crystals.

The atomic or molecular assembly on 2D materials through the relatively weak van der Waals interaction is quite different from the conventional heteroepitaxy and may result in unique growth behaviors. Here, it is shown that straight 1D cyanide chains display universal epitaxy on hexagonal 2D materials. A universal oriented assembly of cyanide crystals (AgCN, AuCN, and Cu0.5Au0.5CN) is observed, where the chains are aligned along the three zigzag lattice directions of various 2D hexagonal crystals (graphene, h-BN, WS2, MoS2, WSe2, MoSe2, and MoTe2). The potential energy landscape of the hexagonal lattice induces this preferred alignment of 1D chains along the zigzag lattice directions, regardless of the lattice parameter and surface elements as demonstrated by first-principles calculations and parameterized surface potential calculations. Furthermore, the oriented microwires can serve as crystal orientation markers, and stacking-angle-controlled vertical 2D heterostructures are successfully fabricated by using them as markers. The oriented van der Waals epitaxy can be generalized to any hexagonal 2D crystals and will serve as a unique growth process to form crystals with orientations along the zigzag directions by epitaxy.

Centimeter-Scale and Highly Crystalline Two-Dimensional Alcohol: Evidence for Graphenol (C6OH).

We report a chemical route to synthesize centimeter-scale stoichiometric "graphenol (C6OH1)", a 2D crystalline alcohol, via vapor phase hydroxylation of epitaxial graphene on Cu(111). Atomic resolution scanning tunneling microscopy revealed this highly-ordered configuration of graphenol and low energy electron diffraction studies on a large-area single crystal graphene film demonstrated the feasibility of the same superstructure being achieved at the centimeter length scale. Periodic density functional theory (DFT) calculations about the formation of C6(OH)1 and its electronic structure are also reported.

Evaporable Glass-State Molecule-Assisted Transfer of Clean and Intact Graphene onto Arbitrary Substrates.

Graphene and its clean transfer methods have gathered growing interest and concern in recent decades. Here, we develop a novel large-scale intact transferring technology of paraffin wax onto arbitrary substrates. The wax will then be removed by thermal evaporation, avoiding uncontrollable reactions and leaving no residues. For characterizations, we adopt Raman, FT-IR, XPS, and DRS to measure the optical reflection difference on various surfaces and the thickness of graphene accurately. All the results demonstrate transferred surfaces' cleanliness and our method's validity. This technique allows for an effective transfer of graphene and enables a wider range of applications in many fields.

Colossal grain growth yields single-crystal metal foils by contact-free annealing.

Single-crystal metals have distinctive properties owing to the absence of grain boundaries and strong anisotropy. Commercial single-crystal metals are usually synthesized by bulk crystal growth or by deposition of thin films onto substrates, and they are expensive and small. We prepared extremely large single-crystal metal foils by "contact-free annealing" from commercial polycrystalline foils. The colossal grain growth (up to 32 square centimeters) is achieved by minimizing contact stresses, resulting in a preferred in-plane and out-of-plane crystal orientation, and is driven by surface energy minimization during the rotation of the crystal lattice followed by "consumption" of neighboring grains. Industrial-scale production of single-crystal metal foils is possible as a result of this discovery.

Two-Dimensional VO2 Mesoporous Microarrays for High-Performance Supercapacitor.

Two-dimensional (2D) mesoporous VO2 microarrays have been prepared using an organic-inorganic liquid interface. The units of microarrays consist of needle-like VO2 particles with a mesoporous structure, in which crack-like pores with a pore size of about 2 nm and depth of 20-100 nm are distributed on the particle surface. The liquid interface acts as a template for the formation of the 2D microarrays, as identified from the kinetic observation. Due to the mesoporous structure of the units and high conductivity of the microarray, such 2D VO2 microarrays exhibit a high specific capacitance of 265 F/g at 1 A/g and excellent rate capability (182 F/g at 10 A/g) and cycling stability, suggesting the effect of unique microstructure for improving the electrochemical performance.

Orientation-Dependent Strain Relaxation and Chemical Functionalization of Graphene on a Cu(111) Foil.

Epitaxial graphene grown on single crystal Cu(111) foils by chemical vapor deposition is found to be free of wrinkles and under biaxial compressive strain. The compressive strain in the epitaxial regions (0.25-0.40%) is higher than regions where the graphene is not epitaxial with the underlying surface (0.20-0.25%). This orientation-dependent strain relaxation is through the loss of local adhesion and the generation of graphene wrinkles. Density functional theory calculations suggest a large frictional force between the epitaxial graphene and the Cu(111) substrate, and this is therefore an energy barrier to the formation of wrinkles in the graphene. Enhanced chemical reactivity is found in epitaxial graphene on Cu(111) foils as compared to graphene on polycrystalline Cu foils for certain chemical reactions. A higher compressive strain possibly favors lowering the formation energy and/or the energy gap between the initial and transition states, either of which can lead to an increase in chemical reactivity.

Photocatalytic activity of attapulgite-TiO2-Ag3PO4 ternary nanocomposite for degradation of Rhodamine B under simulated solar irradiation.

An excellent ternary composite photocatalyst consisting of silver orthophosphate (Ag3PO4), attapulgite (ATP), and TiO2 was synthesized, in which heterojunction was formed between dissimilar semiconductors to promote the separation of photo-generated charges. The ATP/TiO2/Ag3PO4 composite was characterized by SEM, XRD, and UV-vis diffuse reflectance spectroscopy. The co-deposition of Ag3PO4 and TiO2 nanoparticles onto the surface of ATP forms a lath-particle structure. Compared with composite photocatalysts consisting of two phases, ATP/TiO2/Ag3PO4 ternary composite exhibits greatly improved photocatalytic activity for degradation of rhodamine B under simulated solar irradiation. Such ternary composite not only improves the stability of Ag3PO4, but also lowers the cost by reducing application amount of Ag3PO4, which provides guidance for the design of Ag3PO4- and Ag-based composites for photocatalytic applications.

Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites.

Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-TC superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (Ca2Nam-3NbmO3m+1; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼470, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.

Coexistence of Magnetic Order and Ferroelectricity at 2D Nanosheet Interfaces.

Multiferroic materials, in which the electronic polarization can be switched by a magnetic field and vice versa, are of fundamental importance for new electronic technologies. However, there exist very few single-phase materials that exhibit such cross-coupling properties at room temperature, and heterostructures with a strong magnetoelectric coupling have only been made with complex techniques. Here, we present a rational design for multiferroic materials by use of a layer-by-layer engineering of 2D nanosheets. Our approach to new multiferroic materials is the artificial construction of high-quality superlattices by interleaving ferromagnetic Ti0.8Co0.2O2 nanosheets with dielectric perovskite-structured Ca2Nb3O10 nanosheets. Such an artificial structuring allows us to engineer the interlayer coupling, and the (Ti0.8Co0.2O2/Ca2Nb3O10/Ti0.8Co0.2O2) superlattices induce room-temperature ferroelectricity in the presence of the ferromagnetic order. Our technique provides a new route for tailoring artificial multiferroic materials in a highly controllable manner.