RESUMO
Although there are already many efforts to investigate the electronic structures of twisted bilayer graphene, a definitive conclusion has not yet been reached. In particular, it is still a controversial issue whether a tunable electrical (or transport) bandgap exists in twisted bilayer graphene film until now. Herein, for the first time, it has been demonstrated that a tunable electrical bandgap can be opened in the twisted bilayer graphene by the combination effect of twist and vertical electrical fields. In addition, we have also developed a facile chemical vapor deposition method to synthesize large-area twisted bilayer graphene by introducing decaborane as the cocatalyst for decomposing methane molecules. The growth mechanism is demonstrated to be a defined-seeding and self-limiting process. This work is expected to be beneficial to the fundamental understanding of both the growth mechanism for bilayer graphene on Cu foil and more significantly, the electronic structures of twisted bilayer graphene.
RESUMO
For the first time, large-area CVD-grown graphene films transferred onto flexible PET substrates were used as transparent conductive electrodes in alternating current electroluminescence (ACEL) devices. The flexible ACEL device based on a single-layer graphene electrode has a turn-on voltage of 80 V; at 480 V (16 kHz), the luminance and luminous efficiency are 1140 cd/m(2) and 5.0 lm/W, respectively. The turn-on voltage increases and the luminance decreases with increasing stacked layers of graphene, which means the single-layer graphene is the best optimal choice as the transparent conductive electrode. Furthermore, it demonstrates that the graphene-based ACEL device is highly flexible and can work very well even under a very large strain of 5.4%, suggesting great potential applications in flexible optoelectronics.
RESUMO
The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of approximately 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.
