Mechanism for Topology Selection of Isomeric Two-Dimensional Covalent Organic Frameworks.

The mechanism of growth of one of the competitive topologies for covalent organic frameworks with constitutional isomers is poorly understood. Herein, we employ molecular dynamics to study the isoenergetic assembly of the rhombic square (sql) and Kagome lattice (kgm). The concentration, solvent conditions, and the reversibility of chemical reactions are considered by means of an Arrhenius two-state model to describe the reactions. High concentrations and poor solvent both result in sql, agreeing well with recent experiments. Moreover, the high reversibility of reactions gives rise to sql, while the low reversibility leads to kgm, suggesting a new way of regulating the topology. Our analyses support that the nucleation of isomers influenced by experimental conditions is responsible for the selection of topologies, which improves understanding of the control of topology. We also propose a strategy in which a two-step growth can be exploited to greatly improve the crystallinity of kgm.

3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance.

In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (STI) of 3.5 × 1012 cm-2. Moreover, it has the advantages of a small footprint, no limitation in W/L design, and a small gate capacitance compared with the enclosed gate layout. Beside the Z gate layout, a non-radiation-hardened single gate layout and a radiation-hardened enclosed gate layout are simulated using the Sentaurus 3D technology computer-aided design (TCAD) software. First, the transfer characteristics curves (Id-Vg) curves of the three layouts are compared to verify the radiation tolerance characteristic of the Z gate layout; then, the threshold voltage and the leakage current of the three layouts are extracted to compare their TID responses. Lastly, the threshold voltage shift and the leakage current increment at different radiation doses for the three layouts are presented and analyzed.