RESUMO
Exciting Fano resonance can improve the quality factor (Q-factor) and enhance the light energy utilization rate of optical devices. However, due to the large inherent loss of metals and the limitation of phase matching, traditional optical devices based on surface plasmon resonance cannot obtain a larger Q-factor. In this study, a silicon square-hole nano disk (SHND) array device is proposed and studied numerically. The results show that, by breaking the symmetry of the SHND structure and transforming an ideal bound state in the continuum (BIC) with an infinite Q-factor into a quasi-BIC with a finite Q-factor, three Fano resonances can be realized. The calculation results also show that the three Fano resonances with narrow linewidth can produce significant local electric and magnetic field enhancements: the highest Q-factor value reaches 35,837, and the modulation depth of those Fano resonances can reach almost 100%. Considering these properties, the SHND structure realizes multi-Fano resonances with a high Q-factor, narrow line width, large modulation depth and high near-field enhancement, which could provide a new method for applications such as multi-wavelength communications, lasing, and nonlinear optical devices.
