Enhanced Luminance of CdSe/ZnS Quantum Dots Light-Emitting Diodes Using ZnO-Oleic Acid/ZnO Quantum Dots Double Electron Transport Layer.

The widely used ZnO quantum dots (QDs) as an electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs) have one drawback. That the balancing of electrons and holes has not been effectively exploited due to the low hole blocking potential difference between the valence band (VB) (6.38 eV) of ZnO ETL and (6.3 eV) of CdSe/ZnS QDs. In this study, ZnO QDs chemically reacted with capping ligands of oleic acid (OA) to decrease the work function of 3.15 eV for ZnO QDs to 2.72~3.08 eV for the ZnO-OA QDs due to the charge transfer from ZnO to OA ligands and improve the efficiency for hole blocking as the VB was increased up to 7.22~7.23 eV. Compared to the QLEDs with a single ZnO QDs ETL, the ZnO-OA/ZnO QDs double ETLs optimize the energy level alignment between ZnO QDs and CdSe/ZnS QDs but also make the surface roughness of ZnO QDs smoother. The optimized glass/ITO/PEDOT:PSS/PVK//CdSe/ZnS//ZnO-OA/ZnO/Ag QLEDs enhances the maximum luminance by 5~9% and current efficiency by 16~35% over the QLEDs with a single ZnO QDs ETL, which can be explained in terms of trap-charge limited current (TCLC) and the Fowler-Nordheim (F-N) tunneling conduction mechanism.

Thin film encapsulation for quantum dot light-emitting diodes using a-SiN x :H/SiO x N y /hybrid SiO x barriers.

A facile thin film encapsulation (TFE) method having a triple-layered structure of a-SiN x :H/SiO x N y /hybrid SiO x (ASH) on QD-LEDs was performed utilizing both reproducible plasma-enhanced chemical vapor deposition (PECVD) and simple dip-coating processes without adopting atomic layer deposition (ALD). The ASH films fabricated on a polyethylene terephthalate (PET) substrate show a high average transmittance of 88.80% in the spectral range of 400-700 nm and a water vapor transmission rate (WVTR) value of 7.3 × 10-4 g per m2 per day. The measured time to reach 50% of the initial luminance (T50) at initial luminance values of 500, 1000, and 2000 cd m-2 was 711.6, 287.7, and 78.6 h, respectively, and the extrapolated T50 at 100 cd m-2 is estimated to be approximately 9804 h, which is comparable to that of the 12 112 h for glass lid-encapsulated QD-LEDs. This result demonstrates that TFE with the ASH films has the potential to overcome the conventional drawbacks of glass lid encapsulation.

Ultralow Water Permeation Barrier Films of Triad a-SiNx:H/n-SiOxNy/h-SiOx Structure for Organic Light-Emitting Diodes.

Organic electronic devices such as organic light-emitting diodes (OLEDs), quantum dot LEDs, and organic photovoltaics are promising technologies for future electronics. However, achieving long-term stability of organic-based optoelectronic devices has been regarded as a crucial problem to be solved. In this work, a simple and reproducible fabrication method for ultralow water permeation barrier films having a triple-layered (triad) hydrogenated silicon nitride (a-SiNx:H)/nanosilicon oxynitride (n-SiOxNy)/hybrid silicon oxide (h-SiOx) multistructure is presented. Two triad (a-SiNx:H/n-SiOxNy/h-SiOx)n=2 multistructure barrier films are deposited on both sides of a poly(ethylene terephthalate) substrate using a combination of low-pressure plasma-enhanced chemical vapor deposition and dip coating. The deposited films show a high average transmittance (400-700 nm) of 84% and an ultralow water vapor transmission rate of 2 × 10-6 g/m2/day. In the electroluminescence characteristics of OLEDs encapsulated with two triad barrier films, the operational lifetime (T50) of OLEDs is 1584 h, which is almost similar to that (1416 h) of OLEDs encapsulated with a glass lid.

Hybrid Thin-Film Encapsulation for All-Solid-State Thin-Film Batteries.

All-solid-state thin-film batteries have been actively investigated as a power source for various microdevices. However, insufficient research has been conducted on thin-film encapsulation, which is an essential element of these batteries as solid electrolytes and Li anodes are vulnerable to moisture in the atmosphere. In this study, a hybrid thin-film encapsulation structure of hybrid SiOy/SiNxOy/a-SiNx:H/Parylene is suggested and investigated. The water-vapor transmission rate of hybrid thin-film encapsulation is estimated to be 4.9 × 10-3 g m-2·day-1, a value that is applicable to batteries as well as flexible solar cells, thin-film transistor liquid-crystal display, and E-papers. As a result of hybrid thin-film encapsulation, it is confirmed that the all-solid-state thin-film batteries are stable even after 100 charge/discharge cycles in the air atmosphere for 30 days and present a Coulombic efficiency of 99.8% even after 100 cycles in the air atmosphere. These results demonstrate that the thin-film encapsulation structure of hybrid SiOy/SiNxOy/a-SiNx:H/Parylene can be employed in thin-film batteries while retaining long-term stability.

Reduced graphene oxide wrapped core-shell metal nanowires as promising flexible transparent conductive electrodes with enhanced stability.

Transparent conductive electrodes (TCEs) are widely used in a wide range of optical-electronic devices. Recently, metal nanowires (NWs), e.g. Ag and Cu, have drawn attention as promising flexible materials for TCEs. Although the study of core-shell metal NWs, and the encapsulation/overcoating of the surface of single-metal NWs have separately been an object of focus in the literature, herein for the first time we simultaneously applied both strategies in the fabrication of highly stable Ag-Cu NW-based TCEs by the utilization of Ag nanoparticles covered with reduced graphene oxide (rGO). The incorporation of Ag nanoparticles by galvanic displacement reaction was shown to significantly increase the long term stability of the electrode. Upon comparison with a CuNW reference, our novel rGO/Cu-AgNW-based TCEs unveiled remarkable opto-electrical properties, with a 3-fold sheet resistance decrease (from 29.8 Ω sq-1 to 10.0 Ω sq-1) and an impressive FOM value (139.4). No detrimental effect was noticed in the relatively high transmittance value (T = 77.6% at 550 nm) characteristic of CuNWs. In addition, our rGO/Cu-AgNW-based TCEs exhibited outstanding thermal stability up to 20 days at 80 °C in air, as well as improved mechanical flexibility. The superior performance herein reported compared with both CuNWs and AgNWs, and with a current conventional ITO reference, is believed to highlight the great potential of these novel materials as promising alternatives in optical-electronic devices.

Plasmon-enhanced ultraviolet photoluminescence from hybrid structures of graphene/ZnO films.

We report substantially enhanced photoluminescence (PL) from hybrid structures of graphene/ZnO films at a band gap energy of ZnO (∼3.3 eV/376 nm). Despite the well-known constant optical conductivity of graphene in the visible-frequency regime, its abnormally strong absorption in the violet-frequency region has recently been reported. In this Letter, we demonstrate that the resonant excitation of graphene plasmon is responsible for such absorption and eventually contributes to enhanced photoemission from structures of graphene/ZnO films when the corrugation of the ZnO surface modulates photons emitted from ZnO to fulfill the dispersion relation of graphene plasmon. These arguments are strongly supported by PL enhancements depending on the spacer thickness, measurement temperature, and annealing temperature, and the micro-PL mapping images obtained from separate graphene layers on ZnO films.