Electric-field and stress effects on depoling and overpoling phenomena in [001]-poled transverse mode Pb(Zn1/3Nb2/3)O3-(6-7)%PbTiO3 single crystal of [110] length cut.

Solid-solution Pb(Zn(1/3)Nb(2/3))O(3)-PbTiO(3) (PZN-PT) single crystals, touted as next-generation piezoelectric materials, have been studied extensively in the past decade. This work addresses the advantages and limitations of transducers made of transverse mode PZN-(6-7)%PT single crystals of [110](L) X [001](T)(P) cut. This cut exhibits superior electromechanical properties, with k(31) ≈ 0.85 and d(31) ≈-1450 pC/N, and an extremely high d(31)/S(E)(11) value of >35 C/m(2). It also has relatively high overpoling, i.e., rhombohedralto- tetragonal phase transformation, field of ≈2 kV/mm. This overpoling field further decreases with increase in axial compressive stress. Despite these good attributes, this crystal cut has a low depoling field of ≤ 0.3 kV/mm, a result of low coercive fields of [001]-poled relaxor-based single crystals, which decreases further with increasing axial compressive stress, limiting its bipolar drive capability. The axial compressive stress required to cause overpoling via rhombohedral-to-tetragonal phase transformation of relevant domain variants in the crystal is found to be >90 MPa. In contrast, this crystal cut depolarizes at comparatively low axial tensile stress of ≈15 MPa, the magnitude of which is not significantly affected by the moderate forward field applied.

Design and fabrication of PZN-7%PT single crystal high frequency angled needle ultrasound transducers.

A high-frequency angled needle ultrasound transducer with an aperture size of 0.4 x 0.56 mm2 was fabricated using a lead zinc niobate-lead titanate (PZN- 7%PT) single crystal as the active piezoelectric material. The single crystal was bonded to a conductive silver particle matching layer and a conductive epoxy backing material through direct contact curing. A parylene outer matching layer was formed by vapor deposition. Angled needle probe configuration was achieved by dicing at 45 degrees to the single crystal poling direction to satisfy a clinical request for blood flow measurement in the posterior portion of the eye. The electrical impedance magnitude and phase of the transducer were 42 Omega and -63 degrees , respectively. The measured center frequency and the fractional bandwidth at -6 dB were 43 MHz and 45%, respectively. The two-way insertion loss was approximately 17 dB. Wire phantom imaging using fabricated PZN-7%PT single crystal transducers was obtained and spatial resolutions were assessed.

Shear resonance behavior of single-domain PZN-PT single crystals.

The shear resonance behavior of rectangular-shaped samples of single-domain PZN-PT single crystal samples of 3m symmetry and having three faces parallel to the (111), (112), and (110) crystal planes has been examined. Sample geometries with separable resonance peaks are identified, which give shear properties consistent with 3m symmetry, namely, k15 approximately k24 and d15 approximately d24. Sample geometries with inseparable resonance peaks are also distinguished. The latter sample geometries are not suitable for shear property characterization of piezoelectric single crystals of 3m symmetry as the broad coupled resonance peak often results in inflated k15 and d15 values.

Nondestructive evaluation of large-area PZN-8%PT single crystal wafers for medical ultrasound imaging probe applications.

A nondestructive quality evaluation and control procedure for large-area, (001)-cut PZN-8%PT wafers is described. The crystals were grown by the flux technique engineered to promote (001) layer growth of the crystals. The wafers were sliced parallel to the (001) layer growth plane. Curie temperature (Tc) variations, measured with matching arrays of dot electrodes (of 5.0 mm in center-to-center spacing), were found to be better than +/- 4.0 degrees C both within wafers and from wafer to wafer. After selective dicing to give final wafers of narrower Tc distributions (e.g., +/- 3.0 degrees C or better), the wafers were coated with complete electrodes and poled at room temperature at 0.7-0.9 kV/mm. Typical overall properties of the poled wafers were: K3T = 5,200 (+/- 10% from wafer to wafer), tan delta < 0.01 (all wafers), and kt = 0.55 (+/- 5%) (all percentage variations are in relative percentages). Then, the distributions of K3S, tan delta, and kt were measured by the array dot electrode technique. The variations in K3S (hence K3T) and kt within individual wafers were found to be within +/- 10% and +/- 5%, respectively. The dielectric loss values, measured at 1 kHz, were consistently low, being < 0.01 throughout the wafers. The kt values determined by the dot electrodes were found to be about 5% smaller than those obtained with the complete electrodes, which can be attributed to an increase in capacitance ratio due to the partial electroding. The k33 values, deduced using the relation K3S approximately (1 - k33(2))K3T, from the mean K3S and overall K3T values, average 0.94 (+/- 2%). The present work shows that the distribution of Tc within wafers can be used as a convenient check for the uniformity in composition and electromechanical properties of PZN-8%PT single crystal wafers. Our results show that, to control deltaK3T and deltakt within individual wafer to < or = 10% and 5%, respectively, the variation in Tc within the wafer should be kept within +/- 3.0 degrees C or better.