CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor.

The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO is an attractive candidate due to its excellent electrical properties, low processing temperature below copper interconnect thermal budget, and conformal sidewall deposition for novel 3D architecture. An optimized ALD deposited ZnO thin-film transistor achieving a record field-effect and intrinsic mobility (µFE /µo) of 85/140 cm2/V·s is presented here. The ZnO TFT was integrated with HfO2 RRAM in a 1 kbit (32 × 32) 1T1R array, demonstrating functionalities in RRAM switching. In order to co-design for future technology requiring high performance BEOL circuitries implementation, a spice-compatible model of the ZnO TFTs was developed. We then present designs of various ZnO TFT-based inverters, and 5-stage ring oscillators through simulations and experiments with working frequency exceeding 10's of MHz.

A Highly Energy-Efficient Body-Coupled Transceiver Employing a Power-on-Demand Amplifier.

Wearable body sensor nodes require massive data transmission under limited energy. However, it suffers from drastically varying channel loss, which limits its energy efficiency in practical scenarios. This paper presents a power-driven body-channel transceiver (TRX), whose power consumption can be adaptively tuned against varying channel loss. An out-band programmable gain amplifier (PGA) is proposed to save power and generate a quasi-linear correlation between PGA gain and power. By using the quasi-linear gain-power relationship, we propose an auto gain/power control technique to realize on-demand power consumption. In addition, a differential balanced transmitter is designed to eliminate base-band harmonics in on-off keying modulation and increase the power delivered by the transmitter (TX). The TX and receiver (RX) of the prototype were integrated into 1 chip and fabricated in a 55-nm complementary metal oxide semiconductor process. During the measurement, 2 chips were configured as TX and RX, respectively. Both the TX and the RX were wearable, powered by lithium batteries, and attached to the subject's hands. The prototype achieved a 5.25-Mbps data rate with 16-pJ/bit energy efficiency at a 1.5-m straight-line ground path distance. Furthermore, the proposed TRX maintained stable communication within a 1.5-m distance, while dynamically reducing power consumption.

A Re-Configurable Body Channel Transceiver Towards Wearable and Flexible Biomedical Sensor Networks.

Body channel communication (BCC) has become a promising candidate in wireless body area networks (WBAN) due to its advantages in energy efficiency and security. However, BCC transceivers face two challenges: diverse application requirements and varying channel conditions. To overcome these challenges, this article proposes a re-configurable architecture for BCC transceivers (TRXs), whose key parameters and communication protocols can be software-defined (SD) according to the requirements. In the proposed TRX, the programmable direct-sampling receiver (RX) is a combination of a programmable low-noise amplifier (LNA) and a fast-convergent successive approaching register analog-to-digital converter (SAR ADC), to achieve simple but energy-efficient data reception. The programmable digital transmitter (TX) is essentially implemented by a 2-bit DAC array to transmit either wide-band carrier-free signals like 4-level pulse amplitude modulation (PAM-4) or non-return-to-zero (NRZ) or narrow-band carrier-based signals like on-off keying (OOK) or frequency shift keying (FSK). The proposed BCC TRX is fabricated in a 180-nm CMOS process. Through an in-vivo experiment, it achieves up to 10-Mbps data rate and 119.2 pJ/bit energy efficiency. Moreover, the TRX is able to communicate under long-distance (1.5 m) and body-shielding conditions by switching its protocols, which shows the potential to be deployed in all categories of WBAN applications.

All Solution-Processed Inorganic, Multilevel Memristors Utilizing Liquid Metals Electrodes Suitable for Analog Computing.

Herein, we report a solution-processable memristive device based on bismuth vanadate (BiVO4) and titanium dioxide (TiO2) with gallium-based eutectic gallium-indium (EGaIn) and gallium-indium-tin alloy (GaInSn) liquid metal as the top electrode. Scanning electron microscopy (SEM) shows the formation of a nonporous structure of BiVO4 and TiO2 for efficient resistive switching. Additionally, the gallium-based liquid metal (GLM)-contacted memristors exhibit stable memristor behavior over a wide temperature range from -10 to +90 °C. Gallium atoms in the liquid metal play an important role in the conductive filament formation as well as the device's operation stability as elucidated by I-V characteristics. The synaptic behavior of the GLM-memristors was characterized, with excellent long-term potentiation (LTP) and long-term depression (LTD) linearity. Using the performance of our device in a multilayer perceptron (MLP) network, a ∼90% accuracy in the handwriting recognition of modified national institute of standards and technology database (MNIST) was achieved. Our findings pave a path for solution-processed/GLM-based memristors which can be used in neuromorphic applications on flexible substrates in a harsh environment.

Body-Area Powering With Human Body-Coupled Power Transmission and Energy Harvesting ICs.

This paper presents the body-coupled power transmission and ambient energy harvesting ICs. The ICs utilize human body-coupling to deliver power to the entire body, and at the same time, harvest energy from ambient EM waves coupled through the body. The ICs improve the recovered power level by adapting to the varying skin-electrode interface parasitic impedance at both the TX and RX. To maximize the power output from the TX, the dynamic impedance matching is performed amidst environment-induced variations. At the RX, the Detuned Impedance Booster (DIB) and the Bulk Adaptation Rectifier (BAR) are proposed to improve the power recovery and extend the power coverage further. In order to ensure the maximum power extraction despite the loading variations, the Dual-Mode Buck-Boost Converter (DM-BBC) is proposed. The ICs fabricated in 40 nm 1P8M CMOS recover up to 100 µW from the body-coupled power transmission and 2.5 µW from the ambient body-coupled energy harvesting. The ICs achieve the full-body area power delivery, with the power harvested from the ambiance via the body-coupling mechanism independent of placements on the body. Both approaches show power sustainability for wearable electronics all around the human body.