A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor.

We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.

Impact of small-angle scattering on ballistic transport in quantum dots.

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential and that, by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for "ballistic" transport in quantum dots.

A triple quantum dot in a single-wall carbon nanotube.

A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams. Simulations using a capacitor model including tunnel coupling between neighboring dots captures the observed behavior with good agreement. Furthermore, anticrossings between indirectly coupled levels and higher order cotunneling are discussed.

Kondo-enhanced Andreev tunneling in InAs nanowire quantum dots.

We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation of the dot, with subgap peaks at |V(sd)| = Delta/e markedly stronger (weaker) than the quasiparticle tunneling peaks at |V(sd)| = 2Delta/e for odd (even) occupation. We attribute the enhanced Delta peak to an interplay between Kondo correlations and Andreev tunneling in dots with an odd number of spins, and we substantiate this interpretation by a poor man's scaling analysis.

Critical current 0-pi transition in designed Josephson Quantum Dot junctions.

We report on quantum dot based Josephson junctions designed specifically for measuring the supercurrent. From high-accuracy fitting of the current-voltage characteristics, we determine the full magnitude of the supercurrent (critical current). Strong gate modulation of the critical current is observed through several consecutive Coulomb blockade oscillations. The critical current crosses zero close to, but not at, resonance due to the so-called 0-pi transition in agreement with a simple theoretical model.

Electron transport in single-wall carbon nanotube weak links in the Fabry-Perot regime.

We fabricated reproducible high transparency superconducting contacts consisting of superconducting Ti/Al/Ti trilayers to gated single-wall carbon nanotubes. The reported semiconducting single-wall carbon nanotubes have normal state differential conductance up to 3e2/h and exhibit clear Fabry-Perot interference patterns in the bias spectroscopy plot. We observed subharmonic gap structure in the differential conductance and a distinct peak in the conductance at zero bias, which is interpreted as a manifestation of the supercurrent. The gate dependence of this supercurrent as well as the excess current are examined and compared to the coherent theory of superconducting quantum point contacts with good agreement.

Kondo physics in carbon nanotubes.

The connection of electrical leads to wire-like molecules is a logical step in the development of molecular electronics, but also allows studies of fundamental physics. For example, metallic carbon nanotubes are quantum wires that have been found to act as one-dimensional quantum dots, Luttinger liquids, proximity-induced superconductors and ballistic and diffusive one-dimensional metals. Here we report that electrically contacted single-walled carbon nanotubes can serve as powerful probes of Kondo physics, demonstrating the universality of the Kondo effect. Arising in the prototypical case from the interaction between a localized impurity magnetic moment and delocalized electrons in a metallic host, the Kondo effect has been used to explain enhanced low-temperature scattering from magnetic impurities in metals, and also occurs in transport through semiconductor quantum dots. The far greater tunability of dots (in our case, nanotubes) compared with atomic impurities renders new classes of Kondo-like effects accessible. Our nanotube devices differ from previous systems in which Kondo effects have been observed, in that they are one-dimensional quantum dots with three-dimensional metal (gold) reservoirs. This allows us to observe Kondo resonances for very large electron numbers (N) in the dot, and approaching the unitary limit (where the transmission reaches its maximum possible value). Moreover, we detect a previously unobserved Kondo effect, occurring for even values of N in a magnetic field.