1.
Phys Rev Lett
; 90(16): 167601, 2003 Apr 25.
Artigo
em Inglês
| MEDLINE
| ID: mdl-12732008
RESUMO
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.