Intrinsically Stretchable Organic Thermoelectric Polymers Enabled by Incorporating Fused-Ring Conjugated Breakers.

While research on organic thermoelectric polymers is making significant progress in recent years, realization of a single polymer material possessing both thermoelectric properties and stretchability for the next generation of self-powered wearable electronics is a challenging task and remains an area yet to be explored. A new molecular engineering concept of "conjugated breaker" is employed to impart stretchability to a highly crystalline diketopyrrolepyrrole (DPP)-based polymer. A hexacyclic diindenothieno[2,3-b]thiophene (DITT) unit, with two 4-octyloxyphenyl groups substituted at the tetrahedral sp3-carbon bridges, is selected to function as the conjugated breaker that can sterically hinder intermolecular packing to reduce polymers' crystallinity. A series of donor-acceptor random copolymers is thus developed via polymerizing the crystalline DPP units with the DITT conjugated breakers. By controlling the monomeric DPP/DITT ratios, DITT30 reaches the optimal balance of crystalline/amorphous regions, exhibiting an exceptional power factor (PF) value up to 12.5 µW m-1 K-2 after FeCl3-doping; while, simultaneously displaying the capability to withstand strains exceeding 100%. More significantly, the doped DITT30 film possesses excellent mechanical endurance, retaining 80% of its initial PF value after 200 cycles of stretching/releasing at a strain of 50%. This research marks a pioneering achievement in creating intrinsically stretchable polymers with exceptional thermoelectric properties.

Electrical Double-Layer Transistors Comprising Block Copolymer Electrolytes for Low-Power-Consumption Photodetectors.

Electrical double-layer transistors (EDLTs) have received extensive research attention owing to their exciting advantages of low working voltage, high biocompatibility, and sensitive interfacial properties in ultrasensitive portable sensing applications. Therefore, it is of great interest to reduce photodetectors' operating voltage and power consumption by utilizing photo-EDLT. In this study, a series of block copolymers (BCPs) of poly(4-vinylpyridine)-block-poly(ethylene oxide) (P4VP-b-PEO) with different compositions were applied to formulate polyelectrolyte with indigo carmine salt in EDLT. Accordingly, PEO conduces ion conduction in the BCP electrolyte and enhances the carrier transport capability in the semiconducting channel; P4VP boosts the photocurrent by providing charge-trapping sites during light illumination. In addition, the severe aggregation of PEO is mitigated by forming a BCP structure with P4VP, enhancing the stability and photoresponse of the photo-EDLT. By optimizing the BCP composition, EDLT comprising P4VP16k-b-PEO5k and indigo carmine provides the highest specific detectivity of 2.1 × 107 Jones, along with ultralow power consumptions of 0.59 nW under 450 nm light illumination and 0.32 pW under dark state. The results indicate that photo-EDLT comprising the BCP electrolyte is a practical approach to reducing phototransistors' operating voltage and power consumption.

Visible-Light-Promoted Radical Cascade Cyclization of 2-Vinyl Benzimidazoles: Access to Benzo[4,5]imidazo[1,2-b]isoquinolin- 11(6H)-ones.

A visible-light-enabled photoredox radical cascade cyclization of 2-vinyl benzimidazole derivatives is developed. This chemistry is applicable to a wide range of N-aroyl 2-vinyl benzimidazoles as acceptors, and halo compounds, including alkyl halides, acyl chlorides and sulfonyl chlorides, as radical precursors. The Langlois reagent also serves as an effective partner in this photocatalytic oxidative cascade process. This protocol provides a robust alternative for rendering highly functionalized benzo[4,5]imidazo[1,2-b]isoquinolin-11(6H)-ones.

Reversible Molecular Conformation Transitions of Smectic Liquid Crystals for Light/Bias-Gated Transistor Memory.

In recent years, organic photonic field-effect transistors have made remarkable progress with the rapid development of conjugated polycrystalline materials. Liquid crystals, with their smooth surface, defined layer thickness, and crystalline structures, are commonly used for these advantages. In this work, a series of smectic liquid crystalline molecules, 2,9-didecyl-dinaphtho-thienothiophene (C10-DNTT), 2,7-didecyl-benzothieno-benzothiopene (C10-BTBT), 3,9-didecyl-dinaphtho-thiophene (C10-DNT), and didecyl-sexithiophene (C10-6T), have been used in photonic transistor memory, functioning as both hole-transport channels and electron traps to investigate systematically the reasons and mechanisms behind the memory behavior of smectic liquid crystals. After thermal annealing, C10-BTBT and C10-6T/C10-DNTT are homeotropically aligned from the smectic A and smectic X phases, respectively. The 3D-ordered structure of these smectic-aligned crystals contributed to efficient photowriting and electrical erasing processes. Among them, the device performance of C10-BTBT was particularly significant, with a memory window of 21 V. The memory ratio could reach 1.5 × 106 and maintain a memory ratio of over 3 orders after 10,000 s, contributing to its smectic A structure. Through the research, we confirmed the memory and light/bias-gated behaviors of these smectic liquid crystalline molecules, attributing them to reversible molecular conformation transitions and the inherent structural inhomogeneity inside the polycrystalline channel layer.

A pH-Sensitive Stretchable Zwitterionic Hydrogel with Bipolar Thermoelectricity.

Amid growing interest in using body heat for electricity in wearables, creating stretchable devices poses a major challenge. Herein, a hydrogel composed of two core constituents, namely the negatively-charged 2-acrylamido-2-methylpropanesulfonic acid and the zwitterionic (ZI) sulfobetaine acrylamide, is engineered into a double-network hydrogel. This results in a significant enhancement in mechanical properties, with tensile stress and strain of up to 470.3 kPa and 106.6%, respectively. Moreover, the ZI nature of the polymer enables the fabrication of a device with polar thermoelectric properties by modulating the pH. Thus, the ionic Seebeck coefficient (Si ) of the ZI hydrogel ranges from -32.6 to 31.7 mV K-1 as the pH is varied from 1 to 14, giving substantial figure of merit (ZTi ) values of 3.8 and 3.6, respectively. Moreover, a prototype stretchable ionic thermoelectric supercapacitor incorporating the ZI hydrogel exhibits notable power densities of 1.8 and 0.9 mW m-2 at pH 1 and 14, respectively. Thus, the present work paves the way for the utilization of pH-sensitive, stretchable ZI hydrogels for thermoelectric applications, with a specific focus on harvesting low-grade waste heat within the temperature range of 25-40 °C.

Enhanced Electrical Conductivity and Mechanical Properties of Stretchable Thermoelectric Generators Formed by Doped Semiconducting Polymer/Elastomer Blends.

Recent research efforts have concentrated on the development of flexible and stretchable thermoelectric (TE) materials. However, significant challenges have emerged, including increased resistance and reduced electrical conductivity when subjected to strain. To address these issues, rigid semiconducting polymers and elastic insulating polymers have been incorporated and nanoconfinement effects have been exploited to enhance the charge mobility. Herein, a feasible approach is presented for fabricating stretchable TE materials by using a doped semiconducting polymer blend consisting of either poly(3-hexylthiophene) (P3HT) or poly(3,6-dithiophen-2-yl-2,5-di(2-decyltetradecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thienylenevinylene-2,5-yl) (PDVT-10) as the rigid polymer with styrene-ethylene-butylene-styrene (SEBS) as the elastic polymer. In particular, the blend composition is optimized to achieve a continuous network structure with SEBS, thereby improving the stretchability. The optimized polymer films exhibit well-ordered microstructural aggregates, indicative of good miscibility with FeCl3 and enhanced doping efficiency. Notably, a lower activation energy and higher charge-carrier concentration contribute to an improved electrical conductivity under high tensile strain, with a maximum output power of 1.39 nW at a ΔT of 22.4 K. These findings offer valuable insights and serve as guidelines for the development of stretchable p-n junction thermoelectric generators based on doped semiconducting polymer blends with potential applications in wearable electronics and energy harvesting.

Bicyclopentadithiophene-Based Organic Semiconductor for Stable and High-Performance Perovskite Solar Cells Exceeding 22.

Well-performing organic-inorganic halide perovskites are susceptible to poor efficiency and instability due to their various defects at the interphases, grain boundaries (GBs), and surfaces. In this study, an in situ method is utilized for effectively passivating the under-coordinated Pb2+ defects of perovskite with new non-fullerene acceptors (NFAs) (INXBCDT; X = H, Cl, and Br) through their carbonyl and cyano functional groups during the antisolvent dripping process. It reveals that the bicyclopentadithiophene (BCDT) core with highly electron-withdrawing end-capping groups passivates GBs and boosts perovskite grain growth. This effective defect passivation decreases the trap density to increase the carrier recombination lifetime of the perovskite film. As a result, bromo-substituted dicyanomethylene indanone (INBr)-end-capped BCDT (INBrBCDT-b8; 3a)-passivated devices exhibit the highest power conversion efficiency (PCE) of 22.20% (vs those of 18.09% obtained for perovskite films without passivation) upon an optimized film preparation process. Note that devices treated with more soluble 2-ethylhexyl-substituted compounds (1a, 2a, and 3a) exhibit higher PCE than those treated with less soluble octyl-substituted compounds (1b, 2b, and 3b). It is also worth noting that BCDT is a cost-effective six-ring core that is easier to synthesize with a higher yield and therefore much cheaper than those with highly fused-ring cores. In addition, a long-term stability test in a glovebox for 1500 h reveals that the perovskite solar cells (PSCs) based on a perovskite absorber treated with compound 3a maintain ∼90% of their initial PCE. This is the first example of the simplest high-conjugation additive for perovskite film to achieve a PCE greater than 22% of the corresponding lead-based PSCs.

Diselenophene-Dithioalkylthiophene Based Quinoidal Small Molecules for Ambipolar Organic Field Effect Transistors.

This work presents a series of novel quinoidal organic semiconductors based on diselenophene-dithioalkylthiophene (DSpDST) conjugated cores with various side-chain lengths (-thiohexyl, -thiodecyl, and -thiotetradecyl, designated DSpDSTQ-6, DSpDSTQ-10, and DSpDSTQ-14, respectively). The purpose of this research is to develop solution-processable organic semiconductors using dicyanomethylene end-capped organic small molecules for organic field effect transistors (OFETs) application. The physical, electrochemical, and electrical properties of these new DSpDSTQs are systematically studied, along with their performance in OFETs and thin film morphologies. Additionally, the molecular structures of DSpDSTQ are determined through density functional theory (DFT) calculations and single-crystal X-ray diffraction analysis. The results reveal the presence of intramolecular S (alkyl)···Se (selenophene) interactions, which result in a planar SR-containing DSpDSTQ core, thereby promoting extended π-orbital interactions and efficient charge transport in the OFETs. Moreover, the influence of thioalkyl side chain length on surface morphologies and microstructures is investigated. Remarkably, the compound with the shortest thioalkyl chain, DSpDSTQ-6, demonstrates ambipolar carrier transport with the highest electron and hole mobilities of 0.334 and 0.463 cm2 V-1 s-1 , respectively. These findings highlight the excellence of ambipolar characteristics of solution-processable OFETs based on DSpDSTQs even under ambient conditions.

Synergistic Interactions in Sequential Process Doping of Polymer/Single-Walled Carbon Nanotube Nanocomposites for Enhanced n-Type Thermoelectric Performance.

This study focuses on the fabrication of nanocomposite thermoelectric devices by blending either a naphthalene-diimide (NDI)-based conjugated polymer (NDI-T1 or NDI-T2), or an isoindigo (IID)-based conjugated polymer (IID-T2), with single-walled carbon nanotubes (SWCNTs). This is followed by sequential process doping method with the small molecule 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI) to provide the nanocomposite with n-type thermoelectric properties. Experiments in which the concentrations of the N-DMBI dopant are varied demonstrate the successful conversion of all three polymer/SWCNT nanocomposites from p-type to n-type behavior. Comprehensive spectroscopic, microstructural, and morphological analyses of the pristine polymers and the various N-DMBI-doped polymer/SWCNT nanocomposites are performed in order to gain insights into the effects of various interactions between the polymers and SWCNTs on the doping outcomes. Among the obtained nanocomposites, the NDI-T1/SWCNT exhibits the highest n-type Seebeck coefficient and power factor of -57.7 µV K-1 and 240.6 µW m-1 K-2 , respectively. However, because the undoped NDI-T2/SWCNT exhibits a slightly higher p-type performance, an integral p-n thermoelectric generator is fabricated using the doped and undoped NDI-T2/SWCNT nanocomposite. This device is shown to provide an output power of 27.2 nW at a temperature difference of 20 K.

Tunable Thermoelectric Performance of the Nanocomposites Formed by Diketopyrrolopyrrole/Isoindigo-Based Donor-Acceptor Random Conjugated Copolymers and Carbon Nanotubes.

This paper presents the development of thermoelectric properties in nanocomposites comprising donor-acceptor random conjugated copolymers and single-walled carbon nanotubes (SWCNTs). The composition of the conjugated polymers, specifically the ratio of diketopyrrolopyrrole (DPP) to isoindigo (IID), is manipulated to design a series of random conjugated copolymers (DPP0, DPP5, DPP10, DPP30, DPP50, DPP90, DPP95, and DPP100). The objective is to improve the dispersion of SWCNTs into smaller bundles, leading to enhanced thermoelectric properties of the polymer/SWCNT nanocomposite. This dispersion strategy promotes an interconnected conducting network, which plays a critical role in optimizing the thermoelectric performance. Accordingly, the effects of morphologies on the thermoelectric properties of the nanocomposites are systematically investigated. The DPP95/SWCNT nanocomposite exhibits the strongest interaction, resulting in the highest power factor (PF) of 711.1 µW m-1 K-2, derived from the high electrical conductivity of 1690 S cm-1 and Seebeck coefficient of 64.8 µV K-1. The prototype flexible thermoelectric generators assembled with a DPP95/SWCNT film achieve a maximum power output of 20.4 µW m-2 at a temperature difference of 29.3 K. These findings highlight the potential of manipulating the composition of random conjugated copolymers and incorporating SWCNTs to efficiently harvest low-grade waste heat in wearable thermoelectric devices.

Mixed Ionic-Electronic Conducting Hydrogels with Carboxylated Carbon Nanotubes for High Performance Wearable Thermoelectric Harvesters.

Mixed ionic-electronic conducting (MIEC) thermoelectric (TE) materials offer higher ionic conductivity and ionic Seebeck coefficient compared to those of purely ionic-conducting TE materials. These characteristics make them suitable for direct use in thermoelectric generators (TEGs) as the charge carriers can be effectively transported from one electrode to the other via the external circuit. In the present study, MIEC hydrogels are fabricated via the chemical cross-linking of polyacrylamide (PAAM) and polydopamine (PDA) to form a double network. In addition, electrically conducting carboxylated carbon nanotubes (CNT-COOH) are dispersed evenly within the hydrogel via sonication and interaction with the PDA. Moreover, the electrical properties of the hydrogel are further improved via the in situ polymerization of polyaniline (PANI). The presence of CNT-COOH facilitates the ionic conductivity and enhances the ionic Seebeck coefficient via ionic-electronic interactions between sodium ions and carboxyl groups on CNT-COOH, which can be observed in X-ray photoelectron spectroscopy results, thereby promoting the charge transport properties. As a result, the optimum device exhibits a remarkable ionic conductivity of 175.3 mS cm-1 and a high ionic Seebeck coefficient of 18.6 mV K-1, giving an ionic power factor (PFi) of 6.06 mW m-1 K-2 with a correspondingly impressive ionic figure of merit (ZTi) of 2.65. These values represent significant achievements within the field of gel-state organic TE materials. Finally, a wearable module is fabricated by embedding the PAAM/PDA/CNT-COOH/PANI hydrogel into a poly(dimethylsiloxane) mold. This configuration yields a high power density of 171.4 mW m-2, thus highlighting the considerable potential for manufacturing TEGs for wearable devices capable of harnessing waste heat.

N-Type Doping of Naphthalenediimide-Based Random Donor-Acceptor Copolymers to Enhance Transistor Performance and Structural Crystallinity.

An integrated strategy of molecular design and conjugated polymer doping is proposed to improve the electronic characteristics for organic field effect transistor (OFET) applications. Here, a series of soluble naphthalene diimide (NDI)-based random donor-acceptor copolymers with selenophene π-conjugated linkers and four acceptors with different electron-withdrawing strengths (named as rNDI-N/S/NN/SS) are synthesized, characterized, and used for OFETs. N-type doping of NDI-based random copolymers using (12a,18a)-5,6,12,12a,13,18,18a,19-octahydro-5,6-dimethyl-13,18[1',2']-benzenobisbenzimidazo[1,2-b:2',1'-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC) is successfully demonstrated. The undoped rNDI-N, rNDI-NN, and rNDI-SS samples exhibit ambipolar charge transport, while rNDI-S presents only a unipolar n-type characteristic. Doping with DMBI-BDZC significantly modulates the performance of rNDI-N/S OFETs, with a 3- to 6-fold increase in electron mobility (µe) for 1 wt % doped device due to simultaneous trap mitigation, lower contact resistance (RC), and activation energy (EA), and enhanced crystallinity and edge-on orientation for charge transport. However, the doping of intrinsic pro-quinoidal rNDI-NN/SS films exhibits unchanged or even reduced device performance. These findings allow us to manipulate the energy levels by developing conjugated copolymers based on various acceptors and quinoids and to optimize the dopant-polymer semiconductor interactions and their impacts on the film morphology and molecular orientation for enhanced charge transport.

High-Performance Phototransistor Memory with an Ultrahigh Memory Ratio Conferred Using Hydrogen-Bonded Supramolecular Electrets.

As the research of photonic electronics thrives, the enhanced efficacy from an optic unit cell can considerably improve the performance of an optoelectronic device. In this regard, organic phototransistor memory with a fast programming/readout and a distinguished memory ratio produces an advantageous outlook to fulfill the demand for advanced applications. In this study, a hydrogen-bonded supramolecular electret is introduced into the phototransistor memory, which comprises porphyrin dyes, meso-tetra(4-aminophenyl)porphine, meso-tetra(p-hydroxyphenyl)porphine, and meso-tetra(4-carboxyphenyl)porphine (TCPP), and insulated polymers, poly(4-vinylpyridine) and poly(4-vinylphenol) (PVPh). To combine the optical absorption of porphyrin dyes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is selected as a semiconducting channel. The porphyrin dyes serve as the ambipolar trapping moiety, while the insulated polymers form a barrier to stabilize the trapped charges by forming hydrogen-bonded supramolecules. We find that the hole-trapping capability of the device is determined by the electrostatic potential distribution in the supramolecules, whereas the electron-trapping capability and the surface proton doping originated from hydrogen bonding and interfacial interactions. Among them, PVPh:TCPP with an optimal hydrogen bonding pattern in the supramolecular electret produces the highest memory ratio of 1.12 × 108 over 104 s, which is the highest performance among the reported achievements. Our results suggest that the hydrogen-bonded supramolecular electret can enhance the memory performance by fine-tuning their bond strength and cast light on a potential pathway to future photonic electronics.

Solution-Processed Isoindigo- and Thienoisoindigo-Based Donor-Acceptor-Donor π-Conjugated Small Molecules: Synthesis, Morphology, Molecular Packing, and Field-Effect Transistor Characterization.

Molecular design and precise control of thin-film morphology and crystallinity of solution-processed small molecules are important for enhancing charge transport mobility of organic field-effect transistors and gaining more insight into the structure-property relationship. Here, two donor-acceptor-donor (D-A-D) architecture small molecules TRA-IID-TRA and TRA-TIID-TRA comprising an electron-donating triarylamine (TRA) and two different electron-withdrawing cores, isoindigo (IID) and thienoisoindigo (TIID), respectively, were synthesized and characterized. Replacing the phenylene rings of central IID A with thiophene gives a TIID core, which reduces the optical band gap and upshifts the energy levels of frontier molecular orbitals. The single-crystal structures and grazing-incidence wide-angle X-ray scattering (GIWAXS) analysis revealed that TRA-TIID-TRA exhibits the relatively tighter π-π stacking packing with preferential edge-on orientation, larger coherence length, and higher crystallinity due to the noncovalent S···O/S···π intermolecular interactions. The distinctly oriented and connected ribbon-like TRA-TIID-TRA crystalline film by the solution-shearing process achieved a superior hole mobility of 0.89 cm2 V-1 s-1 in the organic field-effect transistor (OFET) device, which is at least five times higher than that (0.17 cm2 V-1 s-1) of TRA-IID-TRA with clear cracks. Eventually, rational modulation of fused core in the π-conjugated D-A-D small molecule provides a new understanding of structural design for enhancing the performance of solution-processed organic semiconductors.

Efficiency improvement of inverted perovskite solar cells enabled by PTAA/MoS2double hole transporters.

Hole transport layer (HTL) plays a critical role in perovskite solar cells (PSCs). We focus on the improvement of PSCs performance with MoS2nanosheets as the anode buffer layer in the inverted photovoltaic structure. PSC with single MoS2buffer layer shows poor performance in power conversion efficiency (PCE) and the long-term stability. By combination of MoS2and Poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA) as double-layer HTL, the PCE is improved to 18.47%, while the control device with PTAA alone shows a PCE of 14.48%. The same phenomenon is also found in 2D PSCs. For double-layer HTL devices, the PCE reaches 13.19%, and the corresponding PCE of the control group using PTAA alone is 10.13%. This significant improvement is attributed to the reduced interface resistance and improved hole extraction ability as shown by the electric impedance spectroscopy and fluorescence spectroscopy. In addition, the improved device exhibits better stability because the PCE still maintains 66% of the initial value after 500 h of storage, which is higher than the 47% of the remaining PCE from device based on single PTAA or MoS2. Our results demonstrate the potential of polymer/inorganic nanomaterial as a double-layer buffer material for PSCs.

Naphthobisthiadiazole-Based π-Conjugated Polymers for Nonfullerene Solar Cells: Suppressing Intermolecular Interaction Improves Photovoltaic Performance.

Naphthobisthiadiazole has been known as a promising building unit of π-conjugated polymers for organic photovoltaics (OPVs). Here, we synthesized new NTz-based polymers that were combined with a benzodithiophene (BDT) unit having alkylthienyl substituents in the polymer backbone, named PNTzBDT, and PNTzBDT-F and PNTzBDT-Cl with fluorine and chlorine groups in the substituents, respectively. The polymers had significantly improved solubility than the previously reported NTz-based polymer (PNTz4T), most likely due to the torsion of the alkylthienyl substituents with respect to the BDT moiety, which suppresses the intermolecular interaction between the backbones. Despite the lower intermolecular interaction and thereby lower crystallinity, these polymers, in particular PNTzBDT and PNTzBDT-F, exhibited higher photovoltaic performances, with power conversion efficiencies as high as 13.3%, than PNTz4T in the cells that used Y6 as the acceptor material. The improved performance was ascribed to the enhanced miscibility of the polymers with the nonfullerene acceptor due to the increased solubility, which in addition led to the better charge generation and reduced charge recombination. These results indicate that NTz-based π-conjugated polymers have high potential for nonfullerene-based OPVs.

Surface PEGylation via Ultrasonic Spray Deposition for the Biofouling Mitigation of Biomedical Interfaces.

Air plasma and spray technology are common methods for surface modification. In this study, air plasma is used to generate hydroxyl groups on various material surfaces. Then random copolymers of styrene and ethylene glycol methacrylate (PS-r-PEGMA) are spray-coated to achieve coating densities ranging between 0.1 and 0.6 mg/cm2. PS50-r-PEGMA50 led to the best overall antifouling properties, while a coating density of 0.3 mg/cm2 was enough to significantly reduce biofouling. This surface modification technique enabled efficient modification of a wide range of materials and biofouling reduction by at least 75% on polymeric surfaces (polystyrene, polyvinylidene fluoride, poly(tetrafluoroethylene), polydimethylsiloxane), metallic surfaces (steel, titanium alloy), or ceramic surface (glass). Applied to the modification of well plate used for blood-typing, this antifouling modification permitted to greatly increase the signal sensitivity (×4).

Photoelectric effect of hybrid ultraviolet-sensitized phototransistors from an n-type organic semiconductor and an all-inorganic perovskite quantum dot photosensitizer.

Low-dimensional all-inorganic perovskite quantum dots (QDs) have been increasingly developed as photo-sensing materials in the field of photodetectors because of their strong light-absorption capability and broad bandgap tunability. Here, solution-processed hybrid phototransistors built by a dithienothiophenoquinoid (DTTQ) n-type organic semiconductor transport channel mixing with a colloidal CsPbBr3 perovskite QD photosensitizer are demonstrated by manipulating the relative volume ratio from 10 : 0 to 9 : 1, 7 : 3, 5 : 5, 3 : 7, 1 : 9, and 0 : 10. This results in a significantly enhanced photodetection performance owing to the advantages of a high UV absorption cross-section based on the perovskite QDs, efficient carrier transport abilities from the DTTQ semiconductor, and the photogating effect between the bulk heterojunction photocarrier transfer interfaces. The optimized DTTQ : QD (3 : 7) hybrid phototransistor achieves a high photoresponsivity (R) of 7.1 × 105 A W-1, a photosensitivity (S) of 1.8 × 104, and a photodetectivity (D) of 3.6 × 1013 Jones at 365 nm. Such a solution-based fabrication process using a hybrid approach directly integrated into a sensitized phototransistor potentially holds promising photoelectric applications towards advanced light-stimulated photodetection.

Controlled Synthesis of Poly[(3-alkylthio)thiophene]s and Their Application to Organic Field-Effect Transistors.

Regioregular polythiophenes have been widely used in organic electronic applications due to their solution processability with chemical modification through side chain engineering, as well as their microstructural organization and good hole transport properties. Here, we introduce alkylthio side chains, (poly[(3-alkylthio)thiophene]s; P3ATTs), with strong noncovalent sulfur molecular interactions, to main chain thienyl backbones. These P3ATTs were compared with alkyl-substituted polythiophene (poly(3-alkylthiophene); P3AT) variants such that the effects of straight (hexyl and decyl) and branched (2-ethylhexyl) side chains (with and without S atoms) on their thin-film morphologies and crystalline states could be investigated. P3ATTs with linear alkylthio side chains (P3HTT, hexylthio; P3DTT, decylthio) did not attain the expected higher organic field-effect transistor (OFET) mobilities with respect to P3HT (hexyl) and P3DT (decyl) mainly due to their lower regioregularity (76-78%), although P3ATTs exhibit an enhanced tendency for aggregation and compact molecular packing, as indicated by the red-shifting of the absorption spectra and the shortening of the π-π stacking distance, respectively. Moreover, the loss of regioregularity issue can be solved by introducing more soluble 2-ethylhexylthio branched side chains to form poly[3-(2-ethylhexylthio)thiophene] (P3EHTT), which provides enhanced crystallinity and efficient charge mobility (increased by up to a factor of 3) with respect to the poly(2-ethylhexylthiophene) (P3EHT) without S atoms in the side moieties. This study demonstrates that the presence of side chain alkylthio structural motifs with nonbonded interactions in polythiophene semiconductors has a beneficial impact on the molecular conformation, morphologies, structural packing, and charge transport in OFET devices.

A Solution Processable Dithioalkyl Dithienothiophene (DSDTT) Based Small Molecule and Its Blends for High Performance Organic Field Effect Transistors.

The 3,5-dithiooctyl dithienothiophene based small molecular semiconductor DDTT-DSDTT (1), end functionalized with fused dithienothiophene (DTT) units, was synthesized and characterized for organic field effect transistors (OFET). The thermal, optical, electrochemical, and computed electronic structural properties of 1 were investigated and contrasted. The single crystal structure of 1 reveals the presence of intramolecular locks between S(alkyl)···S(thiophene), with a very short S-S distance of 3.10 Å, and a planar core. When measured in an OFET device compound 1 exhibits a hole mobility of 3.19 cm2 V-1 s-1, when the semiconductor layer is processed by a solution-shearing deposition method and using environmentally acceptable anisole as the solvent. This is the highest value reported to date for an all-thiophene based molecular semiconductor. In addition, solution-processed small molecule/insulating polymer (1/PαMS) blend films and devices were investigated. Morphological analysis reveals a nanoscopic vertical phase separation with the PαMS layer preferentially contacting the dielectric and 1 located on top of the stack. The OFET based on the blend comprising 50% weight of 1 exhibits a hole mobility of 2.44 cm2 V-1 s-1 and a very smaller threshold voltage shift under gate bias stress.