Nano-Si for On-Demand H2 Production: Optimization of Yield and Real-Time Visualization of Si─H2 O Reaction Using Liquid-Phase Transmission Electron Microscopy.

Hydrogen (H2 ), the most abundant element in the universe, has the potential to address the challenges of energy security and climate change. However, due to the lack of a safe and efficient method for storing and delivering hydrogen, its practical application is still in its infancy stages. To overcome this challenge, a promising solution is demonstrated in the form of on-demand production of H2 using nano-Silicon (Si) powders. The method offers instantaneous production of H2 , yielding a volume of 1.3 L per gram of Si at room temperature. Moreover, the H2 production yield and the rate can be effectively controlled by adjusting the reaction pH value and temperatures. Additionally, liquid-phase transmission electron microscopy (LPTEM) is utilized in situ to demonstrate the entire reaction in real-time, wherein H2 bubble formation is observed and illustrated the gradual conversion of crystalline Si particles into amorphous oxides. Moreover, it is confirmed that the purity of the generated gas is 99.5% using gas chromatography mass spectrometry (GC-MS). These findings suggest a viable option for instant H2 production in portable fuel cells using Si cartridges or pellets.

Ultra-Low-Power and Wide-Operating-Voltage-Window Capacitive Piezotronic Sensor through Coupling of Piezocharges and Depletion Widths for Tactile Sensing.

The rapid growth of Artificial Intelligence and Internet of Things (AIoT) demands the development of ultra-low-power devices for future advanced technology. In this study, we introduce a capacitive piezotronic sensor specifically designed for tactile sensing, which enables an ultra-low-voltage operation at nearly 0 reading bias conditions with a consistent response within a wide voltage range. This sensor directly detects capacitance changes induced by piezocharges, reflecting perturbation of the effective depletion width, and ensures ultralow power capability by eliminating the necessity of turning on the Schottky diode for the first time. The dynamic response of the sensor demonstrates ultralow power capability and immunity to triboelectric interference, making it particularly suitable for tactile sensing applications in robotics, prosthetics, and wearables. This study provides valuable insights and design guidelines for future ultra-low-power thin-film-based capacitive piezotronic/piezophototronic devices for tactile sensing.

Scalable Interlayer Nanostructure Design for High-Rate (10C) Submicron Silicon-Film Electrode by Incorporating Silver Nanoparticles.

High C-rate capability at 10C is a key performance indicator for the commercialization of the next-generation high-charging lithium microbattery. However, silicon (Si) anode satisfying the prerequisite high specific capacity suffers from poor electron/ionic conductivity, seriously limiting the 10C rate capability. Accordingly, we propose the strategy of inserting highly conductive silver nanoparticles (AgNPs) as an interlayer between two RF-sputtered amorphous Si thin films to form an Si/Ag/Si multilayered anode, with the density and spatial distribution of the AgNPs well-controlled by thermal evaporation. This strategy is exclusively beneficial to scale up film thickness for higher capacity. Without AgNPs, the 10C rate performance of the double-layer Si (D_Si) is worse than the single layer (S_Si) in the same total thickness, suggesting the adverse effect of the interface. However, this situation is progressively improved with the AgNPs density incorporated at the interface, where the densest AgNPs anode (D_SiAg3) demonstrated a noticeable improvement reaching 1250 mAh/g at 10 C with a 46% capacity retention rate. By scaling up to triple layers, T_SiAg3 performed the superior 10C rate capability to T_Si, testifying to the scalable potential of the unique design for boosting high-power batteries. Finally, with electrochemical impedance spectroscopy results, a possible mechanism to explain the enhancement in rate capability is subject to where Li-ion diffusion is accelerated by the charge-induced electric field condensing around the AgNPs. This design for a multilayered nanocomposite can contribute to the design and fabrication of high-charging batteries and battery-on-chip.

Sputter-Deposited High Entropy Alloy Thin Film Electrocatalyst for Enhanced Oxygen Evolution Reaction Performance.

Thin film catalysts, giving a different morphology, provide a significant advantage over catalyst particles for the gas evolution reaction. Taking the advantages of sputter deposition, a high entropy alloy (HEA) thin film electrocatalyst is hereby reported for the oxygen evolution reaction (OER). The catalyst characteristics are investigated not only in its as-deposited state, but also during and after the OER. For comparison, unary, binary, ternary, and quaternary thin film catalysts are prepared and characterized. The surface electronic structure modification due to the addition of a metal is studied experimentally and theoretically using density functional theory calculation. It is demonstrated that sputtered FeNiMoCrAl HEA thin film exhibits OER performance superior to all the reported HEA catalysts with robust electrocatalytic activity having a low overpotential of 220 mV at 10 mA cm-2 , and excellent electrochemical stability at different constant current densities of 10 and 100 mA cm-2 for 50 h. Furthermore, the microstructure transformation is investigated during the OER, which is important for the understanding of the OER mechanism provided by HEA electrocatalyst. Such a finding will contribute to future catalyst design.

Large magnetoelectric resistance in the topological Dirac semimetal α-Sn.

The spin-momentum locking of surface states in topological materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magnetoelectric resistance (BMER) effect offers a new approach for information reading and field sensing applications, but the effects demonstrated so far are too weak or for low temperatures. This article reports the first observation of BMER effects in topological Dirac semimetals; the BMER responses were measured at room temperature and were substantially stronger than those reported previously. The experiments used topological Dirac semimetal α-Sn thin films grown on silicon substrates. The films showed BMER responses that are 106 times larger than previously measured at room temperature and are also larger than those previously obtained at low temperatures. These results represent a major advance toward realistic BMER applications. Significantly, the data also yield the first characterization of three-dimensional Fermi-level spin texture of topological surface states in α-Sn.

Erratum: Chiral Spin-Wave Velocities Induced by All-Garnet Interfacial Dzyaloshinskii-Moriya Interaction in Ultrathin Yttrium Iron Garnet Films [Phys. Rev. Lett. 124, 027203 (2020)].

This corrects the article DOI: 10.1103/PhysRevLett.124.027203.

Noninvasive measurements of spin transport properties of an antiferromagnetic insulator.

Antiferromagnetic insulators (AFIs) are of substantial interest because of their potential in the development of next-generation spintronic devices. One major effort in this emerging field is to harness AFIs for long-range spin information communication and storage. Here, we report a noninvasive method to optically access the intrinsic spin transport properties of an archetypical AFI α-Fe2O3 via nitrogen-vacancy (NV) quantum spin sensors. By NV relaxometry measurements, we successfully detect the frequency-dependent dynamic fluctuations of the spin density of α-Fe2O3 along the Néel order parameter, from which an intrinsic spin diffusion constant of α-Fe2O3 is experimentally measured in the absence of external spin biases. Our results highlight the significant opportunity offered by NV centers in diagnosing the underlying spin transport properties in a broad range of high-frequency magnetic materials such as two-dimensional magnets, spin liquids, and magnetic Weyl semimetals, which are challenging to access by the conventional measurement techniques.

Reconfigurable Spin-Wave Interferometer at the Nanoscale.

Spin waves can transfer information free of electron transport and are promising for wave-based computing technologies with low-power consumption as a solution to severe energy losses in modern electronics. Logic circuits based on the spin-wave interference have been proposed for more than a decade, while it has yet been realized at the nanoscale. Here, we demonstrate the interference of spin waves with wavelengths down to 50 nm in a low-damping magnetic insulator. The constructive and destructive interference of spin waves is detected in the frequency domain using propagating spin-wave spectroscopy, which is further confirmed by the Brillouin light scattering. The interference pattern is found to be highly sensitive to the distance between two magnetic nanowires acting as spin-wave emitters. By controlling the magnetic configurations, one can switch the spin-wave interferometer on and off. Our demonstrations are thus key to the realization of spin-wave computing system based on nonvolatile nanomagnets.

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal.

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. Herein, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

Synergistic effects of Ga doping and Mg alloying over the enhancement of the stress sensitivity of a Ga-doped MgZnO pressure sensor.

We demonstrate the synergistic effects of Ga doping and Mg alloying into ZnO on the large enhancement of the piezopotential and stress sensing performance of piezotronic pressure sensors made of Ga-doped MgZnO films. Piezopotential-induced pressure sensitivity was enhanced through the modulation of the Schottky barrier height. Doping with Ga (0.62 Å) of larger ionic radius and alloying with Mg (0.57 Å) of smaller ionic radius than Zn ions can synergistically affect the overall structural, optical and piezoelectric properties of the resulting thin films. The crystal quality of Ga-doped MgZnO films either improved (X Ga ≦ 0.041) or deteriorated (X Ga ≧ 0.041) depending on the Ga doping concentration. The band gap increased from 3.90 eV for pristine MgZnO to 3.93 eV at X Ga = 0.076, and the piezoelectric coefficient (d 33) improved from ∼23.25 pm V-1 to ∼33.17 pm V-1 at an optimum Ga concentration (X Ga = 0.027) by ∼2.65 times. The change in the Schottky barrier height ΔΦ b increased from -4.41 meV (MgZnO) to -4.81 meV (X Ga = 0.027) and decreased to -3.99 meV at a high Ga doping concentration (X Ga = 0.041). The stress sensitivity (0.2 kgf) enhanced from 28.50 MPa-1 for the pristine MgZnO to 31.36 MPa-1 (X Ga = 0.027) and decreased to 25.56 MPa-1 at higher Ga doping concentrations, indicating the synergistic effects of Ga doping and Mg alloying over the pressure sensing performance of Ga-doped MgZnO films.

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator.

We report the modification of magnetism in a magnetic insulator Y_{3}Fe_{5}O_{12} thin film by topological surface states (TSS) in an adjacent topological insulator Bi_{2}Se_{3} thin film. Ferromagnetic resonance measurements show that the TSS in Bi_{2}Se_{3} produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y_{3}Fe_{5}O_{12}. Such TSS-induced changes become more pronounced as the temperature decreases from 300 to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

Author Correction: Record thermopower found in an IrMn-based spintronic stack.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Record thermopower found in an IrMn-based spintronic stack.

The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck coefficients. In spintronics, the antiferromagnetic metal IrMn has been used as the pinning layer in magnetic tunnel junctions that form building blocks for magnetic random access memories and magnetic sensors. Spin pumping experiments revealed that IrMn Néel temperature is thickness-dependent and approaches room temperature when the layer is thin. Here, we report that the Seebeck coefficient is maximum at the Néel temperature of IrMn of 0.6 to 4.0 nm in thickness in IrMn-based half magnetic tunnel junctions. We obtain a record Seebeck coefficient 390 (±10) µV K-1 at room temperature. Our results demonstrate that IrMn-based magnetic devices could harvest the heat dissipation for magnetic sensors, thus contributing to the Power-of-Things paradigm.

Graphene/ZnO Nanowire/p-GaN Vertical Junction for a High-Performance Nanoscale Light Source.

We report on a high-brightness ultraviolet (UV) nanoscale light source. The light emission diodes are constructed with graphene/ZnO nanowire/p-GaN vertical junctions, which exhibit strong UV electroluminescence (EL) emissions centered at a wavelength of 397 nm at one end of the ZnO nanowire. Compared to the horizontal heterojunction, the vertical junction based on the ZnO nanowire increases the interface area of the heterojunction along with a high-quality interface, thus making the device robust under a large excitation current. In this structure, transparent flexible graphene is used as the top electrode, which can effectively improve performance by increasing the carrier injection area. Moreover, by analyzing the relationship between the integrated light intensity and applied bias, a superlinear dependency with a slope of 3.99 is observed, which means high electrical-to-optical conversion efficiency. Three electron-hole irradiation recombination processes are distinguished according to the EL emission spectra.

Chiral Spin-Wave Velocities Induced by All-Garnet Interfacial Dzyaloshinskii-Moriya Interaction in Ultrathin Yttrium Iron Garnet Films.

Spin waves can probe the Dzyaloshinskii-Moriya interaction (DMI), which gives rise to topological spin textures, such as skyrmions. However, the DMI has not yet been reported in yttrium iron garnet (YIG) with arguably the lowest damping for spin waves. In this work, we experimentally evidence the interfacial DMI in a 7-nm-thick YIG film by measuring the nonreciprocal spin-wave propagation in terms of frequency, amplitude, and most importantly group velocities using all electrical spin-wave spectroscopy. The velocities of propagating spin waves show chirality among three vectors, i.e., the film normal direction, applied field, and spin-wave wave vector. By measuring the asymmetric group velocities, we extract a DMI constant of 16 µJ/m^{2}, which we independently confirm by Brillouin light scattering. Thickness-dependent measurements reveal that the DMI originates from the oxide interface between the YIG and garnet substrate. The interfacial DMI discovered in the ultrathin YIG films is of key importance for functional chiral magnonics as ultralow spin-wave damping can be achieved.

Current-controlled propagation of spin waves in antiparallel, coupled domains.

Spin waves may constitute key components of low-power spintronic devices. Antiferromagnetic-type spin waves are innately high-speed, stable and dual-polarized. So far, it has remained challenging to excite and manipulate antiferromagnetic-type propagating spin waves. Here, we investigate spin waves in periodic 100-nm-wide stripe domains with alternating upward and downward magnetization in La0.67Sr0.33MnO3 thin films. In addition to ordinary low-frequency modes, a high-frequency mode around 10 GHz is observed and propagates along the stripe domains with a spin-wave dispersion different from the low-frequency mode. Based on a theoretical model that considers two oppositely oriented coupled domains, this high-frequency mode is accounted for as an effective antiferromagnetic spin-wave mode. The spin waves exhibit group velocities of 2.6 km s-1 and propagate even at zero magnetic bias field. An electric current pulse with a density of only 105 A cm-2 can controllably modify the orientation of the stripe domains, which opens up perspectives for reconfigurable magnonic devices.

Tunable Work Function of Mg xZn1- xO as a Viable Friction Material for a Triboelectric Nanogenerator.

Since the invention of triboelectric nanogenerators (TENGs), their output performance has been improved through various approaches such as material surface modification, device structure optimization, and so on, but rarely through the development of new friction materials. In this work, a magnetron sputtered Mg xZn1- xO film is developed as a viable friction material that rubs against polydimethylsiloxane in a TENG. The work function, measured by Kelvin probe microscopy, of the Mg xZn1- xO films can be effectively tuned by varying Mg composition, x, and exposed surface facets, which are shown to dominate the charge-transfer behavior. In addition, film thickness also plays an important role, affecting the output performance. The output voltage and total charge of a TENG with a Mg xZn1- xO film are demonstrated to be tremendously enhanced by 55 and 90 times, respectively, compared to that of a TENG with a ZnO film. Even more intriguingly, the tribo-output polarity can be reversed by adjusting the relative work function through varying the preferred growth orientation of the Mg xZn1- xO film, for a given value of Mg content.

Freestanding Three-Dimensional CuO/NiO Core-Shell Nanowire Arrays as High-Performance Lithium-Ion Battery Anode.

We demonstrate significant improvement of CuO nanowire arrays as anode materials for lithium ion batteries by coating with thin NiO nanosheets conformally. The NiO nanosheets were designed two kinds of morphologies, which are porous and non-porous. By the NiO nanosheets coating, the major active CuO nanowires were protected from direct contact with the electrolyte to improve the surface chemical stability. Simultaneously, through the observation and comparison of TEM results of crystalline non-porous NiO nanosheets, before and after lithiation process, we clearly prove the effect of expected protection of CuO, and clarify the differences of phase transition, crystallinity change, ionic conduction and the mechanisms of the capacity decay further. Subsequently, the electrochemical performances exhibit lithiation and delithiation differences of the porous and non-porous NiO nanosheets, and confirm that the presence of the non-porous NiO coating can still effectively assist the diffusion of Li+ ions into the CuO nanowires, maintaining the advantage of high surface area, and improves the cycle performance of CuO nanowires, leading to enhanced battery capacity. Optimally, the best structure is validated to be non-porous NiO nanosheets, in contrary to the anticipated porous NiO nanosheets. In addition, considering the low cost and facile fabrication process can be realized further for practical applications.

Strong Interlayer Magnon-Magnon Coupling in Magnetic Metal-Insulator Hybrid Nanostructures.

We observe strong interlayer magnon-magnon coupling in an on-chip nanomagnonic device at room temperature. Ferromagnetic nanowire arrays are integrated on a 20-nm-thick yttrium iron garnet (YIG) thin film strip. Large anticrossing gaps up to 1.58 GHz are observed between the ferromagnetic resonance of the nanowires and the in-plane standing spin waves of the YIG film. Control experiments and simulations reveal that both the interlayer exchange coupling and the dynamical dipolar coupling contribute to the observed anticrossings. The coupling strength is tunable by the magnetic configuration, allowing the coherent control of magnonic devices.

Author Correction: High-quality AlN grown with a single substrate temperature below 1200 °C.

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.