Extended topological valley-locked surface acoustic waves.

Stable and efficient guided waves are essential for information transmission and processing. Recently, topological valley-contrasting materials in condensed matter systems have been revealed as promising infrastructures for guiding classical waves, for they can provide broadband, non-dispersive and reflection-free electromagnetic/mechanical wave transport with a high degree of freedom. In this work, by designing and manufacturing miniaturized phononic crystals on a semi-infinite substrate, we experimentally realized a valley-locked edge transport for surface acoustic waves (SAWs). Critically, original one-dimensional edge transports could be extended to quasi-two-dimensional ones by doping SAW Dirac "semimetal" layers at the boundaries. We demonstrate that SAWs in the extended topological valley-locked edges are robust against bending and wavelength-scaled defects. Also, this mechanism is configurable and robust depending on the doping, offering various on-chip acoustic manipulation, e.g., SAW routing, focusing, splitting, and converging, all flexible and high-flow. This work may promote future hybrid phononic circuits for acoustic information processing, sensing, and manipulation.

Solidly Mounted Longitudinally Excited Shear Wave Resonator (YBAR) Based on Lithium Niobate Thin-Film.

This paper proposed a solid-mounted (SM) longitudinally excited shear wave resonator (i.e., YBAR). By adopting a 200 nm x-cut LiNbO3 film, top (aluminum) and bottom (platinum) electrodes in 50 nm thickness and 500 nm width, this resonator simultaneously achieves an operating frequency over 5 GHz with an electromechanical coupling coefficient exceeding 50%. Compared with previously proposed YBAR with suspended structure, the proposed SM-YBAR can effectively suppress unwanted spurious modes with only a slight loss of the electromechanical coupling coefficient. The SM-YABR also provides better device stability, possible low-temperature drift coefficient, and a more convenient and mature device processing. It has the potential to meet the multiple requirements for the next generation signal processing devices in terms of high frequency, large bandwidth, stability, and low cost, etc.