Baduanjin is Better Balance Training Compared to Walking: A Cross-Sectional Study Based on Center of Gravity Trajectories.

BACKGROUND:  It has already been demonstrated by previous studies that Baduanjin training can improve the body's balance. However, its biomechanical mechanism remains unknown. Center of gravity (COG) trajectory analysis is an essential biomechanical test to explore the balance ability of the human body. Previous studies have not used the COG trajectory analysis technique to research Baduanjin training. The study utilizes COG trajectory analysis to analyze the trajectory of COG during Baduanjin training and compare it with that of walking, which is a common exercise for improving balance and aerobic ability, to determine if Baduanjin exercises affect the COG more than walking. MATERIALS AND METHODS:  Eight healthy female college students performed the walking and the eight forms of Baduanjin, a total of nine motions. The lower body kinematics were captured by the Vicon Motion Capture and Analysis System, while the kinetic data were acquired by the Kistler 3D Force Platform. The data were imported into Visual 3D to process the trajectory of the COG displacement amplitude, velocity, and acceleration of each motion. The COG horizontal envelope areas were calculated by Origin 9.0 Software (Origin Lab, Northampton, Massachusetts, USA) . RESULTS: Specific motions of Baduanjin provided significantly higher COG displacement amplitude, velocities, and acceleration training than walking. The F2 and F5 motions could provide a larger COG horizontal envelope area than walking. On the x-axis, F2 provided a greater COG displacement amplitude than walking, F1, F2, and F5 provided greater velocities, while all the motions provided greater accelerations. On the y-axis, all the motions except F2 provided greater COG displacement velocities and accelerations than walking. On the z-axis, F1-7 provided a greater COG displacement amplitude than walking, all the motions provided greater velocities, while all the motions except F2 provided greater accelerations. CONCLUSION: Baduanjin training provides a more intense COG perturbation than walking, which may be a more challenging balance training than walking.

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.

The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there is an interaction between the residual hydrogen and carbon impurities. An increase of the carbon doping concentration can increase resistivity of the p-GaN and weaken blue luminescence (BL) band intensity. However, when hydrogen incorporation increased with carbon doping concentration, the increase of resistivity caused by carbon impurity is weaken and the BL band intensity is enhanced. This suggests that the co-doped hydrogen not only passivate MgGa, but also can passivate carbon impurities in Mg-doped p-GaN.

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process.

A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H2 at the lower temperature period in the two-step cooling process. At the same time, as the density of In QDs is closely dependent on the surface In-rich layer, this provides us a way to study the surface property of the InGaN layer directly.

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.

The InGaN/GaN multi-quantum wells (MQWs) are prepared at the same condition by metal-organic chemical vapor deposition (MOCVD) except the thickness of cap layers additionally grown on each InGaN well layer. The photoluminescence (PL) intensity of the thin cap layer sample is much stronger than that of thicker cap layer sample. Interestingly, the thick cap layer sample has two photoluminescence peaks under high excitation power, and the PL peak energy-temperature curves show an anomalous transition from reversed V-shaped to regular S-shaped with increasing excitation power. Meanwhile, it exhibits a poorer thermal stability of thick cap layer sample under higher excitation power than that under lower excitation power. Such an untypical phenomenon is attributed to carrier redistribution between the two kinds of localized states which is induced by the inhomogeneous distribution of indium composition in thick cap layer sample. Furthermore, the luminescence of deep localized states has a better thermal stability, and the luminescence of shallow localized states has a poor thermal stability. In fact, such a severer inhomogeneous indium distribution may be caused by the degradation of subsequent epitaxial growth of InGaN/GaN MQWs region due to longer low-temperature GaN cap layer growth time.

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Both yellow luminescence (YL) and blue luminescence (BL) bands of GaN films have been investigated for decades, but few works report the relationship between them. In this study, two sets of GaN samples grown via metalorganic chemical vapor deposition (MOCVD) were investigated. A close relationship was found between the YL and BL bands for unintentionally doped GaN and Si-doped GaN samples, both of which were grown without intentional acceptor doping. It was found that the intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases sharply with the increase in carbon impurity concentration, even though both IBL and IYL increase obviously. It was also found that IBL/IYL decreases sharply with the increase in Si doping concentration. It is suggested that the C and Si impurities play important role in linkage and competition of the blue and yellow luminescence.

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) are investigated. It is observed from the room temperature (RT) photoluminescence (PL) measurements that the YL band is enhanced in the PL spectra of those samples if their MOCVD growth is carried out with a decrease of pressure, temperature, or flow rate of NH3. Furthermore, a strong dependence of YL band intensity on the carbon concentration is found by secondary ion mass spectroscopy (SIMS) measurements, demonstrating that the increased carbon-related defects in these samples are responsible for the enhancement of the YL band.

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells.

Twelve InGaN MQW LED samples with varying well thickness grown via metal-organic chemical vaper deposition (MOCVD) are investigated. It is observed from electroluminescence (EL) measurement that at low current densities, the peak energy shifts to blue with increasing current, and when the current change by fixed increment, the peak energy shifts to blue end to different extent among samples. This blue shift was expected to be stronger when the well thickness increases, however, for well widths above 5 nm we observe a decrease in emission energy. Since no relaxation was detected from reciprocal space mapping (RSM), the deteriorated homogeneity is found to be responsible for this phenomenon. Temperature dependent photoluminescence (TDPL) results analyzed by band-tail model fitting show that the localization effect gets more prominent with increasing well thickness. It is found that elevating the growth temperature of active region from 710°C to 750°C significantly improves the homogeneity of InGaN layer.

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.

Two InGaN/GaN multiple-quantum-well (MQW) samples with identical epitaxial structures are grown at different growth rates via metal-organic chemical vapor deposition system. The room temperature photoluminescence intensity of the fast-grown sample is much stronger than that of the slow-grown one. In addition, the fast-grown sample has two luminescence peaks at low temperatures, and the height of main peak anomalously increases with increasing temperature below 100 K. Such improved emission efficiency and the untypical temperature-induced increase of peak height can be attributed to the carrier's transferring between two kinds of localized traps with different potential depth in the fast-grown sample, where the distribution of indium is seriously inhomogeneous. The enhanced fluctuation of indium is caused by the reduced migration time of adsorbed atoms due to the increased growth rate during the epitaxial growth of MQW region.