New Strategy for Improvement of Interfacial Interactions between Poly(arylene sulfide sulfone) and Carbon Fiber by Grafting Polymeric Chains via Thiol-Ene Click Chemistry.

A simple and efficient strategy for enhancing the interfacial interaction in carbon fiber-reinforced poly(arylene sulfide sulfone) (CF/PASS) composites by grafting polymeric chains via thiol-ene click chemistry is reported here. Simultaneously, three thiol compounds and carbon nanotubes were grafted on CFs to explore the reaction between the CF and thiol groups. X-ray photoelectron spectroscopy, Raman spectroscopy, and normalized temperature-dependent IR spectroscopy results confirm the successful grafting of three thiol compounds, carbon nanotubes, and polymer chains. Similarly, obvious changes on the CF surface can be seen before and after modification via scanning electron microscopy, such as grafted nanotubes and polymeric resin, and the increase in the modulus gradient and interfacial thickness of CF/PASS can be clearly seen via atomic force microscopy. All the results of micro and macro tests on mechanical properties indicate that connecting low molecular weight thiol-terminated PASS (HS-LPASS) onto CFs enhances the interfacial property and mechanical performance of CF/PASS to a greater extent. The interfacial shear strength, interlaminar shear strength, and tensile strength of CF@HS-LPASS-reinforced PASS (CF@HS-LPASS/PASS) increase significantly by 38.5, 43.6, and 24.4%, respectively. All the results demonstrate that thiol-ene click reactions can be used for CF modification; furthermore, in the presence of external stress, the grafted polymeric interphase can act as a "bridge layer" to improve the stress transfer efficiency.

Improve the Interfacial Properties between Poly(arylene sulfide sulfone) and Carbon Fiber by Double Polymeric Grafted Layers Designed on a Carbon Fiber Surface.

Double polymeric grafted layer is constructed by two steps of chemical reaction, in which two polymers had been used, respectively polydopamine (PDA) film and modified PASS (NH2-PASS) resin containing amine group, as the interphase in carbon fiber reinforced poly(arylene sulfide sulfone) (PASS) composite (CF/PASS) to work on enhancing the interfacial property. All the test results of chemical components and chemical structures on the carbon fiber surface show that the double polymeric grafted layer was constructed successfully with PDA and NH2-PASS chains. And obvious characteristics of thin PDA film and a polymer layer can be clearly seen in the morphology of modified carbon fiber. In addition to this, the obvious interphase and change in the thickness of interphase have been observed in the modulus distribution images of CF/PASS. The final superb performance is achieved by PASS composites with a double polymeric grafted layer, 27.2% and 198.6% superior to the original PASS composite for IFSS and ILSS, respectively. Moreover, the result also indicates that constructing a double polymeric grafted layer on a carbon fiber surface is a promising technique to modify carbon fiber for processing high-performance advanced thermoplastic composites and is more environmental friendly as well as convenient.

Self-aligned stitching growth of centimeter-scale quasi-single-crystalline hexagonal boron nitride monolayers on liquid copper.

Two-dimensional hexagonal boron nitride (hBN) atomic crystals are excellent charge scattering screening interlayers for advanced electronic devices. Although wafer-scale single crystalline hBN monolayer films have been demonstrated on liquid Au and solid Cu (110) and (111) vicinal surfaces, their reproducible growth still remains challenging. Here, we report the facile self-aligned stitching growth of centimeter-scale quasi-single-crystalline hBN monolayer films through synergistic chemical vapor deposition growth kinetics and liquid Cu rheological kinetics control. The sublimation temperature of the ammonia borane precursor, H2 content and melting temperature of the Cu substrate are revealed to be the dominant factors that regulate hBN nucleation, growth and alignment. The flowing liquid Cu catalytic surface promotes efficient rotation of floating triangular hBN domains and provokes uniform self-alignment upon merging at a critical high temperature of 1105 °C. Identical aligned grains are constantly observed at multiple regions, which corroborate the homogeneous in-plane orientation and uniform stitching over the whole growth area. Continuous quasi-single-crystalline hBN monolayer films are produced by seamless stitching of aligned domains with the same polarity. The quasi-single-crystalline hBN monolayers are successfully included as charge scattering and trap site screening interlayers in the hBN/SiO2 gate insulator stack to build high performance InGaZnO field-effect transistors (FETs). Full suppression of hysteresis and twofold enhancement of field-effect mobility are realized for InGaZnO FETs built with hBN as the interface dielectric. The facile growth of large quasi-single-crystalline hBN monolayers on liquid Cu paves the way for future high-performance electronics.

Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.

InGaZnO (IGZO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in flat panel displays. However, the compromised transport performance and bias stress instability are critical issues inhibiting its application in ultrahigh-resolution optoelectronic displays. Here, we report the fabrication of graded channel junctionless IGZO:O|N TFTs with both high transporting properties and good bias stress stability by systematic manipulation of oxygen vacancy (VO) defects through sequential O antidoping and O/N codoping of the continuous IGZO framework. The transporting properties and bias stress stability of the graded channel IGZO:O|N TFTs, which exhibited high field-effect mobilities close to 100 cm2 V-1 s-1, negligible performance degradations, and trivial threshold voltage shifts against gate bias stress and photobias stress, are simultaneously improved compared to those of the controlled single-channel uniformly doped IGZO:O TFTs, IGZO:N TFTs, and double-channel barrier-confined IGZO:O/IGZO:N TFTs. The synergistic improvements are attributed to the sequential mobility and stability enhancement effects of O antidoping and O/N codoping where triple saturation currents are induced by O antidoping of the front-channel regime while the trapped electrons and photoexcited holes in the back-channel bulk and surface regions are suppressed by O/N codoping. More importantly, fast accumulation and barrier-free full depletion are rationally realized by eliminating the junction interface within the graded channel layer. Our observation identifies that graded channel doping could be a powerful way to synergistically boost up the transport performance and bias stress stability of oxide TFTs for new-generation ultrahigh-definition display applications.

Molecular Beam Epitaxy Scalable Growth of Wafer-Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics.

Monolayer MoTe2 , with the narrowest direct bandgap of ≈1.1 eV among Mo- and W-based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near-infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer-by-layer growth of 2 in. wafer-scale continuous monolayer 2H-MoTe2 films on inert SiO2 dielectrics by molecular beam epitaxy is reported. A single-step Mo-flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H-MoTe2 with 100% monolayer coverage is successfully grown on inert 2 in. SiO2 /Si wafer, which exhibits highly uniform in-plane structural continuity and excellent phonon-limited carrier transport behavior. The dynamics-controlled growth recipe is also extended to fabricate continuous monolayer 2H-MoTe2 on atomic-layer-deposited Al2 O3 dielectric. With the breakthrough in growth of wafer-scale continuous 2H-MoTe2 monolayers on device compatible dielectrics, batch fabrication of high-mobility monolayer 2H-MoTe2 field-effect transistors and the three-level integration of vertically stacked monolayer 2H-MoTe2 transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H-MoTe2 films on universal substrates and paves the way for the ultimate miniaturization of electronics.

Fe/Zn-modified tricalcium phosphate (TCP) biomaterials: preparation and biological properties.

Bone repairing materials play an essential role in the repair treatment of bone defects. The presence of calcium phosphate invertebrates is of significance for bone repairing processes. However, the mechanical properties and osteogenic activities of many current calcium phosphate materials are not ideal, which limit their biological applications. Therefore, it is an effective alternative strategy to study the modification of calcium phosphate biomaterials to address these limitations. In this research, in order to enhance the biological performance of tricalcium phosphate (ß-TCP), metal species (Fe and Zn) modified ß-TCP materials through the co-precipitation method were successfully developed. The physical, chemical and biological properties of the binary composites were carefully studied for the first time. The bioactivities of the Fe-TCP and Zn-TCP were evaluated by simulating body fluid (SBF) immersion experiments, blood compatibility, and cytotoxicity tests. The findings demonstrated that the metal-TCP with excellent cytocompatibility and osteogenic properties shows good potential in medical applications.

Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films.

We report here a reliable and reproducible single-step (without post-annealing) fabrication of phase-pure p-type rhombohedral CuAlO2 (r-CuAlO2) thin films by reactive magnetron sputtering. The dependence of crystallinity and phase compositions of the films on the growth temperature was investigated, revealing that highly-crystallized r-CuAlO2 thin films could be in situ grown in a narrow temperature window of ∼940 °C. Optical and electrical property studies demonstrate that (i) the films are transparent in the visible light region, and the bandgaps of the films increased to ∼3.86 eV with the improvement of crystallinity; (ii) the conductance increased by four orders of magnitude as the film was evolved from the amorphous-like to crystalline structure. The predominant role of crystallinity in determining CuAlO2 film properties was demonstrated to be due to the heavy anisotropic characteristics of the O 2p-Cu 3d hybridized valence orbitals.