Second harmonic generation and simplified bond hyperpolarizability model analyses on the intermixing of Si/SiGe stacked multilayers for gate-all-around structure.

Si/SiGe stacked multilayers are key elements in fabrication of gate-all-around (GAA) structures and improvement of electrical properties, with the evolution of the Si/SiGe interfaces playing a crucial role. In this work, a model is developed based on the simplified bond hyperpolarizability model (SBHM) to analysis the anisotropic reflective second harmonic generation (Ani-RSHG) on a three-period stacked Si/Si1-xGexmultilayer, which builds on Si(100) diamond structures. TheC4vsymmetry of the Si(100) structure enables the second harmonic generation (SHG) contribution from the bonds to be simplified and the effective hyperpolarizabilities of the interfacial and bulk sources to be obtained. The effective interface dipolar and bulk quadrupolar SHG hyperpolarizabilities in the Si1-xGexsample with various Ge concentration profiles are modeled by interpreting the concentration of a component element as the probability of the element occupying an atomic site. On the basis of the developed model, the Ani-RSHG spectra of the as-grown samples with various Ge ratios for each layer and the samples annealed at 850 °C and 950 °C are analyzed to inspect the change in Ge distribution and its gradient in depth. The ani-RSHG analysis on as-grown samples showed difference in Ge distribution in samples with the multi Si/SiGe structure, which is not well observed in synchrotron x-ray diffraction (XRD) spectra. For the annealed samples, the response to changes in Ge concentration and its gradient in depth reveal the Si/Si1-xGexinterface intermixing. Results of high-angle annular dark-field scanning transmission electron microscopy and energy dispersive x-ray spectroscopy agree well with the Ani-RSHG with SBHM findings. Compared with the Raman and synchrotron XRD spectra, the Ani-RSHG with SBHM simulation result demonstrates much better response to changes in compositions of the Si/Si1-xGexstacked multilayered structures, verifying the potential for characterizing the concentration distribution in stacked multilayered thin films for GAA structures.

Structure of an In Situ Phosphorus-Doped Silicon Ultrathin Film Analyzed Using Second Harmonic Generation and Simplified Bond-Hyperpolarizability Model.

In fabricating advanced silicon (Si)-based metal-oxide semiconductors, the ability to inspect dopant distribution in Si ultrathin films (tens of nm) is crucial for monitoring the amount of dopant diffusion. Here, we perform an anisotropic reflective second harmonic generation (SHG) measurement to demonstrate the sensitivity of SHG to phosphorus (P) concentration within the range of 2.5×1017 to 1.6×1020 atoms/cm3. In addition, we propose an analysis method based on a simplified bond-hyperpolarizability model to interpret the results. The bond vector model that corresponds to the P vacancy clusters is built to calculate the SHG contribution from substitutionally incorporated P atoms. The effect of incorporating P into the Si lattice is reflected in the effective hyperpolarizability, lattice tilt, and deformation of this model. The fitting results of the intuitively defined coefficients exhibit a high correlation to the P concentration, indicating the potential of this model to resolve the properties in complex material compositions. Finally, a comparison with Fourier analysis is made to evaluate the advantages and disadvantages of this model. Combined anisotropic reflective SHG (Ani-RSHG) and the simplified bond-hyperpolarizability model (SBHM) can analyze the crystal structure of doped ultrathin films and provide a non-destructive nanophotonic way for in-line inspection.

Structural evolution of in situ boron-doped SiGe ultrathin film analyzed by multi-optical methods.

In situ boron (B)-doped SiGe (BSG) layer is extensively used in the source (S)/(D) drain of metal-oxide-semiconductor field-effect transistors. An unexpected structural evolution occurs in BSG during metallization and activation annealing during actual fabrication, which involves a correlated interaction between B and SiGe. Herein, the complicated phenomena of the structural evolution of BSG were analyzed by 325 nm micro-Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), reflective second harmonic generation (RSHG), and synchrotron x-ray diffraction (XRD). Optical inspection was integrated into these processes to establish a multi-optical method. 325 nm micro-Raman spectroscopy was used to determine variations in Si-Si, Si-Ge, and Ge-Ge bonds in BSG. XPS exhibited the binding energy evolution of Ge3d during different annealing processes at varied Ge ratios and B concentrations. RSHG revealed the polar Si-B and Ge-B bonds formed during annealing. Synchrotron XRD provided the structure and strain changes of BSG. Secondary-ion mass spectrometer profiles provided the species distribution, which was used to examine the results of multi-optical method. Furthermore, double-layered BSG (DBSG) with different B concentrations were analyzed using the multi-optical method. Results revealed that Ge aggregated in the homogeneous interface of DBSG, and that B dopants in BSG served as carrier providers that strongly influenced the BSG structure. However, BSG with excessive B concentration was unstable and increased the B content (SiB3) through metallization. For BSG with a suitable B concentration, the formation of Si-B and Ge-B bonds suppressed the diffusion of Ge from SiGe, thereby reducing the possibility of Ge loss and further B pipe-up in the heavily doped S/D region.

Strong correlation between optical properties and mechanism in deficiency of normalized self-assembly ZnO nanorods.

Although, post annealing is an efficient way to annihilate/restructure deficiencies in self-assembly (SA) ZnO nanorods (ZNRs), the detailed investigation about the surface properties of annealed SA-ZNRs is a long standing issue and the major discrepancy is mainly due to single step annealing. We demonstrate the strategic two step annealing process to create reliable structural configuration in SA-ZNRs during the first round of annealing at 800 °C in vacuum (VA process), and create intrinsic defects in the second step of annealing in oxygen rich atmosphere (OA process) to correlate the formation of the defects related to green/orange-red emission. SA-ZNRs annealed in VA-OA processes reveal positive correlations between the oxygen flow rate and formation of oxygen interstitials (Oi) and zinc vacancies (VZn). The OA-VA processes exhibit the relation of residual Oi and additional Vo. According to VA-OA and OA-VA processes, we propose that the green emission in ZnO annealed in oxygen poor/rich condition is mainly due to the formation of Vo/VZn and annealing at oxygen rich condition creates Oi that lead to strong orange-red emission. Rather than O1s, we propose a reliable method by considering the peak shift of Zn2p in XPS to inspect the ZnO matrix, which has good interdependence with the characteristics of PL.

Migration Energy Barriers for the Surface and Bulk of Self-Assembly ZnO Nanorods.

Post-annealing treatment is a necessary process to create/eliminate/repair defects in self⁻assembly (SA) metal oxide by providing enough thermal energy to the O atoms to overcome the migration energy barrier in ZnO. The height of migration energy barrier is dependent on the depth from the surface, which is hard to be estimated by theoretical calculations, as well as the optical analyses. SA ZnO nanorods (ZNRs) have high surface-to-volume ratio to provide complete picture between the optical and surface properties obtained by photoluminescence (PL) and ultraviolet/X-ray photoemission spectroscopy (UPS/XPS), which is used to investigate the evolution of structure and chemical states of the surface layers to reveal mutual agreement on all observations in PL, XPS, and UPS. We demonstrate variation of the surface structure of SA-ZNRs by scanning over a range of annealing temperatures and time to regulate the structure variation of SA-ZNRs, and their optical analyses agrees well with PL, XPS and UPS, which indicates the dependence of migration energy barriers on the depth from the surface of ZNR. The results reveal the well ZNRs formed at 570 °C and the further oxidation process and the formation of hydroperoxide on the Zn-rich surface of ZNRs at 640 °C.

Thermal effect of Zn quantum dots grown on Si(111): competition between relaxation and reconstraint.

Zn dots are potential solutions for metal contacts in future nanodevices. The metastable states that exist at the interface between Zn quantum dots and oxide-free Si(111) surfaces can suppress the development of the complete relaxation and increase the size of Zn dots. In this work, the actual heat consumption of the structural evolution of Zn dots resulting from extrinsic thermal effect was analyzed. Zn dots were coherently grown on oxide-free Si(111) through magnetron RF sputtering. A compensative optical method combined with reflective second harmonic generation and synchrotron x-ray diffraction (XRD) was developed to statistically analyze the thermal effect on the Zn dot system. Pattern matching (3 m) between the Zn and oxide-free Si(111) surface enabled Si(111) to constrain Zn dots from a liquid to solid phase. Annealing under vacuum induced smaller, loose Zn dots to be reconstrained by Si(111). When the size of the Zn dots was in the margin of complete relaxation, the Zn dot was partially constrained by potential barriers (metastable states) between Zn(111) and one of the six in-planes of Si〈110〉. The thermal disturbance exerted by annealing would enable partially constrained ZnO/Zn dots to overcome the potential barrier and be completely relaxed, which is obvious on the transition between Zn(111) and Zn(002) peak in synchrotron XRD. Considering the actual irradiated surface area of dots array in a wide-size distribution, the competition between reconstrained and relaxed Zn dots on Si(111) during annealing was statistically analyzed.

The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing.

Further scale down the dimension of silicon-based integrated circuit is a crucial trend in semiconductor fabrication. One of the most critical issues in the nano-device fabrication is to confirm the atomic structure evolution of the ultrathin shallow junction. In this report, UV Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES) and reflective second harmonic generation (RSHG) are utilized to monitor the pulse laser induced atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) at room and cold substrate temperature. A peak feature around 480 cm-1 resolved in UV Raman spectra indicates the formation of Si-B bond after the laser irradiation. The red shift of binding energy of Si element (~99 eV) in XPS and the evolution of absorption peak (~196.2 eV) in XANES reveal that the changes in the chemical states of ultra shallow junction strongly correlate to the activation process of Boron implantation, which is confirmed by RSHG measurement. The substrate temperature effect in the recrystallization of Boron implanted region is also realized by cross-section high-resolution TEM (HRTEM). The phenomena of Si-B bond formation and ultra-shallow junction recrystallization can be traced and applied to improve the reliability of Si ultra shallow junction in the future.

Crystal Orientation Dynamics of Collective Zn dots before Preferential Nucleation.

The island nucleation in the context of heterogeneous thin film growth is often complicated by the growth kinetics involved in the subsequent thermodynamics. We show how the evolution of sputtered Zn island nucleation on Si(111) by magnetron sputtering in a large area can be completely understood as a model system by combining reflective second harmonic generation (RSHG), a 2D pole figure with synchrotron X-ray diffraction. Zn dots are then oxidized on the surfaces when exposed to the atmosphere as Zn/ZnO dots. Derived from the RSHG patterns of Zn dots at different growth times, the Zn dots grow following a unique transition from kinetic to thermodynamic control. Under kinetic-favoring growth, tiny Zn dots prefer arranging themselves with a tilted c-axis to the Si(111) substrate toward any of the sixfold in-plane Si<110> directions. Upon growth, the Zn dots subsequently evolve themselves to a metastable state with a smaller tilting angle toward selective <110> directions. As the Zn dots grow over a critical size, they become most thermodynamically stable with the c-axis vertical to the Si(111) substrate. For a system with large lattice mismatch, small volume dots take kinetic pathways with insignificant deviations in energy barriers.

Polarization-independent distortion corrector fabricated using polymer-dispersed liquid crystals.

We demonstrate a polarization-independent distortion corrector fabricated using a polymer-dispersed liquid crystal (PDLC) cell placed on the intermediate image plane of an optical system. At low voltage, a hazy PDLC cell scatters the incident rays and redirects the off-axis propagated chief ray. The chief ray approaches the principal point of the lens element, thereby decreasing image distortion. At high voltage, the PDLC cell becomes transparent, thereby restoring the image distortion. The PDLC-based distortion corrector is an easy-to-fabricate universal device that can be applied to various optical systems. With a large lens diameter, the distortion of a PDLC-corrected image is approximately 1/5 of that of an uncorrected image.

All-optical and polarization-independent spatial filter based on a vertically-aligned polymer-stabilized liquid crystal film with a photoconductive layer.

An all-optical and polarization-independent spatial filter was developed in a vertically-aligned (VA) polymer-stabilized liquid crystal (PSLC) film with a photoconductive (PC) layer. This spatial filter is based on the effect of light on the conductivity of PC layer: high (low)-intensity light makes the conductivity of the PC layer high (low), resulting in a low (high) threshold voltage of the PC-coated VA PSLC cell. Experimental results indicate that this spatial filter is a high-pass filter with low optical-power consumption (about 1.11 mW/cm(2)) in an optical Fourier transform system. The high-pass characteristic was confirmed by simulation. Accordingly, the all-optical and polarization-independent spatial filter can be used to enhance the edges of images.

The integration solution of copper barrier deposition for nanometer interconnect process.

As the dimensions of devices are shrunk quickly, the requirements of metallization become more critical. For VIA barrier and seeding layer filling and deposition, the process was mostly applied with the copper physical vapor deposition methodology in the back-end of line flow of the interconnection metallization. The criteria for barrier and seeding layer deposition are the metal continuity inside the VIA feature and grain size and orientation control for film diffusion barrier and qualities. Besides, while the interconnection size shrunk to nano-scale, the barrier thickness would be very thinner to maintain the VIA resistance; however, it would face the film conformity and continuity consistence within the wafer and different features. The integration solution would be developed and studied with the re-sputter process step adding into the convectional physical vapor deposition process. The resputter process step could not only improve the film conformity and continuity in the VIA's sidewall; but also reduce the resistance of VIA feature over 20%. The improvement of the resputter method adding into the deposition process would be contributed to the standard barrier deposition in the nano-scale feature of the interconnect. Besides, we also discussed the effect of the film properties after the resputter process introduced into the barrier deposition.

Bistable transflective cholesteric light shutters.

We have presented a bistable transflective cholesteric light shutter. The shutter contains dual-frequency cholesteric liquid crystals that incorporate a photocurable monomer. The electro-optical properties and optical microscope images of the shutter were examined. Good correlations between the cholesteric textures and optical properties of the shutters were obtained. The shutter was switched into a wide-band homogeneous transmission mode by a low frequency voltage pulse, and into a selective reflection mode using a high-frequency voltage pulse. The concentration of the monomer apparently affected the electro-optical characteristics of the shutter.