Magnetotransport studies of Fe vacancy-ordered Fe4+δSe5 nanowires.

We studied the electrical transport of Fe4+δSe5 single-crystal nanowires exhibiting √5 × âˆš5 Fe-vacancy order and mixed valence of Fe. Fe4+δSe5 compound has been identified as the parent phase of FeSe superconductor. A first-order metal-insulator (MI) transition of transition temperature T MI ∼ 28 K is observed at zero magnetic fields (B). Colossal positive magnetoresistance emerges, resulting from the magnetic field-dependent MI transition. T MI demonstrates anisotropic magnetic field dependence with the preferred orientation along the c axis. At temperature T < ∼17 K, the state of near-magnetic field-independent resistance, which is due to spin polarized even at zero fields, preserves under magnetic fields up to B = 9 T. The Arrhenius law shift of the transition on the source-drain frequency dependence reveals that it is a nonoxide compound with the Verwey-like electronic correlation. The observation of the magnetic field-independent magnetoresistance at low temperature suggests it is in a charge-ordered state below T ∼ 17 K. The results of the field orientation measurements indicate that the spin-orbital coupling is crucial in √5 × âˆš5 Fe vacancy-ordered Fe4+δSe5 at low temperatures. Our findings provide valuable information to better understand the orbital nature and the interplay between the MI transition and superconductivity in FeSe-based materials.

Mode Dependency of Quantum Decoherence Studied via an Aharonov-Bohm Interferometer.

We investigate the dependence of decoherence on the mode number M in a multiple-mode Aharonov-Bohm (AB) interferometer. The design of the AB interferometer allows us to precisely determine M by the additivity rule of ballistic conductors; meanwhile, the decoherence rate is simultaneously deduced by the variance of the AB oscillation amplitude. The AB amplitude decreases and fluctuates with depopulating M. Moreover, the normalized amplitude exhibits a maximum at a specific M (∼9). Data analysis reveals that the charge-fluctuation-induced dephasing, which depends on the geometry and the charge relaxation resistance of the system, could play an essential role in the decoherence process. Our results suggest that the phase coherence, in principle, can be optimized using a deliberated design and pave one of the ways toward the engineering of quantum coherence.