Direct near-field phase measurement of laser diodes employing a single-mode fiber interferometer.

A method of direct measurement of near-field phase and intensity distribution of laser diodes employing a single-mode fiber interferometer is proposed and demonstrated. The phase and intensity of the output beam of the laser in the vicinity of the output facet are measured directly via interferometry. Using a 980 nm laser diode as an example, we obtained a beam width of 0.9 and 3.6 µm at the output facet in the vertical and horizontal axes, respectively. In addition, the phase information of the output beam was also obtained by using interferometry. This technique is particularly useful for laser diodes whose near-field phases are difficult to measure directly. The measured vertical and horizontal wavefront radius of curvatures of a laser diode are in good agreement with the calculation from Gaussian beam theory. Detailed understanding and measurement of the near-field phase and intensity distributions of light sources and optical components are essential for micro-optic designs with better mode matching to minimize the insertion loss.

Wavefront measurements of diode laser beams with large dynamic ranges.

We propose and demonstrate a method for the measurement of the wavefronts of high-power diode laser beams with large dynamic ranges. Our wavefront sensor consists of a movable pinhole and a wavefront-slope detector. The measurement results show that the wavefront sensor exhibits a large dynamic range of pi/2 to -pi/2 and a high precision on the measured average wavefront slope. The wavefronts of high-power diode laser beams having large divergence angles at arbitrary locations (including near and far fields) can be reconstructed via the wavefront measurement at a given location. The amplitude and phase distributions of a laser beam could be determined from the measured optical field data using diffraction theory. The experimental measurement of the wavefront of a 980 nm diode laser beam will be presented and discussed.

Asymmetric elliptic-cone-shaped microlens for efficient coupling to high-power laser diodes.

A new scheme of asymmetric elliptic-cone-shaped microlens (AECSM) employing a single-step fabrication technique for efficient coupling between the high-power 980-nm laser diodes and the single-mode fibers is proposed. The AECSMs are fabricated by asymmetrically shaping the fiber during the single-step grinding process and elliptically lensing the fiber tip during the fusing process. A maximum coupling efficiency of 85% and a high-average coupling efficiency of 71% have been demonstrated for a 980-nm laser diode with a high aspect ratio of 5. In comparison with the previous works on asymmetric fiber microlenses fabricated by the multi-step processes with complicated fabrication, the advantages of the AECSM structure for achieving high coupling are a single-step fabrication, a reproducible process, and a high-yield output. Therefore, this AECSM can form different aspect ratios of asymmetric elliptical microlenses to match the far field of the high-power diode lasers that is suitable for use in commercial high-power pump laser modules.

Preform fabrication and fiber drawing of 300 nm broadband Cr-doped fibers.

The fabrication of a Cr-doped fiber using a drawing-tower method with Cr:YAG as the core of the preform is presented. The Cr-doped YAG preform was fabricated by a rod-in-tube method. By employing a negative pressure control in drawing-tower technique on the YAG preform, the Cr-doped fibers with a better core circularity and uniformity, and good interface between core and cladding were fabricated. The amplified spontaneous emission spectrum showed a broadband emission of 1.2 to 1.6 mum with the output power density about a few nW/nm. The results indicate that this new Cr-doped fiber may be used as a broadband fiber amplifier to cover the bandwidths in the whole 1.3-1.6 mum range of low-loss and lowdispersion windows of silica fibers.

Broadband emission from Cr-doped fibers fabricated by drawing tower.

We report on the first fabrication of a Cr-doped fiber using a drawing-tower method with Cr:YAG as the core of the preform. Both Cr3+ and Cr4+ ions coexist in the Cr-doped fiber, and the amplified spontaneous emission (ASE) spectrum shows a broadband emission of 1.2 to 1.55 mum which can not be realized by using currently available fiber amplifiers. This indicates that the new Cr-doped fibers have the potential for being used as a broadband fiber amplifier to cover the bandwidth of the entire 1.3-1.6 mum range which exhibit 300 nm usable spectral bands.