Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability.

Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.10 software. The influence on the device of parameters, including perovskite thickness, total defect density, series and shunt resistances, and operating temperature, are discussed and analyzed. With optimized parameters, the efficiency increased from 13.47% to 18.33%. Then, a new SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag device was proposed which includes a silicon-rich oxide (SiOx) layer. This material was used as the down-conversion energy material, which converts high-energy photons (ultraviolet UV light) into low-energy photons (visible light), improving the stability and absorption of the device. Finally, with SiOx, we obtained an efficiency of 22.46% in the simulation. Therefore, the device with the SiOx layer is the most suitable as it has better values for current density-voltage output and quantum efficiency than the device without SiOx.

MnPc Films Deposited by Ultrasonic Spray Pyrolysis at Low Temperatures: Optical, Morphological and Structural Properties.

In this work, we report how manganese phthalocyanine (MnPc) films obtained using the ultrasonic spray-pyrolysis technique at 40 °C deposited on glass substrate subjected to thermal annealing at 100 °C and 120 °C. The MnPc films were characterized using UV/Vis spectroscopy, Raman spectroscopy, X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM). The absorption spectra of the MnPc films were studied in a wavelength range from 200 to 850 nm, where the characteristic bands of a metallic phthalocyanine known as B and Q bands were observed in this range of the spectrum. The optical energy band (Eg) was calculated using the Tauc equation. It was found that, for these MnPc films, the Eg has the values of 4.41, 4.46, and 3.58 eV corresponded to when they were deposited, annealing at 100 °C and 120 °C, respectively. The Raman spectra of the films showed the characteristic vibrational modes of the MnPc films. In the X-Ray diffractograms of these films, the characteristic diffraction peaks of a metallic phthalocyanine are observed, presenting a monoclinic phase. The SEM images of these films were studied in a cross-section obtaining thicknesses of 2 µm for the deposited film and 1.2 µm and 0.3 µm for the annealed films at 100 °C and 120 °C. Additionally, in the SEM images of these films, average particle sizes ranging from 4 to 0.041 µm were obtained. The results agree with those reported in the literature for MnPc films deposited by performing other techniques.

Nanocomposites of Silicon Oxides and Carbon: Its Study as Luminescent Nanomaterials.

In this work, hybrid structures formed by nanostructured layers, which contain materials, such as porous silicon (PSi), carbon nanotubes (CNTs), graphene oxide (GO), and silicon-rich oxide (SRO), were studied. The PSi layers were obtained by electrochemical etching over which CNTs and GO were deposited by spin coating. In addition, SRO layers, in which silicon nanocrystals are embedded, were obtained by hot filament chemical vapor deposition (HFCVD) technique. Photoluminescence (PL) spectra were obtained from the hybrid structures with which a comparative analysis was completed among different PL ones. The SRO layers were used to confine the CNTs and GO. The main purpose of making these hybrid structures is to modulate their PL response and obtain different emission energy regions in the PL response. It was found that the PL spectra of the CNTs/SRO and GO/SRO structures exhibit a shift towards high energies compared to those obtained from the PSi layers; likewise, the PSi/CNTs/SRO and PSi/GO/SRO structures show a similar behavior. To identify the different emission mechanisms originated by PSi, GO, CNTs, and SRO, the PL spectra were deconvolved. It was found that the Psi/CNTs/SRO and Psi/GO/SRO structures exhibit a PL shift in respect to the PSi layers, for this reason, the modulation of the PL emission of the structures makes these hybrid structures promising candidates to be applied in the field of photonic and electroluminescent devices.

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors.

MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of -4 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 µA. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage. I-t measurements confirmed the increased photogenerated current. Furthermore, the MIS structure, characterized by current-wavelength (I-λ) measurements, exhibited a maximum responsivity value at 254 mA/W, specific detectivity (D*) at 2.21 × 1011 cm Hz1/2 W-1, and a noise equivalent power (NEP) of 49 pW at a wavelength of 535 nm. The structure exhibited good switching behavior, with rise and fall times between 120 and 150 ms, respectively. These rise and decay times explain the generation and recombination of charge carriers and the trapping and release of traps, respectively. These results make MIS-type structures useful as photodetectors in the 420 to 590 nm range.

Synthesis and Study of the Optical Properties of PMMA Microspheres and Opals.

Polymethylmethacrylate (PMMA) microspheres were synthesized by surfactant-free emulsion polymerization. These microspheres were used to obtain opals by the self-assembly method. Monomer and initiator quantities were varied systematically to monitor the size of PMMA microspheres. From SEM and DLS measurements, a trend was observed showing as the monomer and initiator amounts increased the average diameter of PMMA microspheres increased except when a minimum monomer amount was reached, for which the size of the microspheres remained practically constant. Diffuse reflectance spectra were processed by the Kubelka-Munk treatment to estimate the energy band gap (Eg) of the PMMA microspheres. It was found that PMMA microspheres present an indirect transition. From SEM micrographs, it is seen that PMMA opals photonic crystals are formed by microspheres in a uniform periodic face-centered cubic (fcc) array. Variable-angle specular reflectance spectra show that the opals possess a pseudo photonic band gap (PBG) in the visible and near-IR regions. Furthermore, it was found that PBGs shift towards larger wavelengths as the average diameter of the PMMA microspheres increases.

Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD.

In the present work, non-stoichiometric silicon oxide films (SiOx) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiOx films in areas such as optoelectronics. SiOx films were characterized with different spectroscopic techniques. The deposited films have interesting characteristics such as the presence of silicon nanoclusters without applying thermal annealing, in addition to a strong photoluminescence after applying thermal annealing in the vicinity of 1.5 eV, which may be attributed to the presence of small, oxidized silicon grains (less than 2 nm) or silicon nanocrystals (Si-nc). An interesting correlation was found between oxygen content, the presence of hydrogen, and the formation of defects in the material, with parameters such as the band gap and the Urbach energies. This correlation is interesting in the development of band gap engineering for this material for applications in photonic devices.

Synthesis of colloidal solutions with silicon nanocrystals from porous silicon.

In this work, we have obtained colloidal solutions of Si nanocrystals (Si-ncs), starting from free-standing porous silicon (PSi) layers. PSi layers were synthesized using a two-electrode Teflon electrochemical cell; the etching solution contained hydrogen peroxide 30%, hydrofluoric acid 40% (HF), and methanol. The anodizing current density was varied to 250 mA cm(-2), 1 A cm(-2), and 1.2 A cm(-2). Thus obtained, PSi was mechanically pulverized in a mortar agate; then, the PSi powders were poured into different solutions to get the final Si-ncs colloidal solutions. The different optical, morphological, and structural characteristics of the colloidal solutions with Si-ncs were measured and studied. These Si-ncs colloidal solutions, measured by photoluminescence (PL), revealed efficient blue-green or violet emission intensities. The results of X-ray diffraction (XRD) indicate that the colloidal solutions are mainly composed of silicon nanocrystallites. The result of UV-vis transmittance indicates that the optical bandgap energies of the colloidal solutions varied from 2.3 to 3.5 eV for colloids prepared in methanol, ethanol, and acetone. The transmission electron microscopy (TEM) images showed the size of the nanocrystals in the colloidal solutions. Fourier transform infrared spectroscopy (FTIR) spectra showed different types of chemical bonds such as Si-O-Si, Si-CH2, and SiH x , as well as some kind of defects. PACS: 61.46Df.-a; 61.43.Gt; 61.05.cp; 78.55.-m; 81.15.Gh.