High-Performance Implantable Sensors based on Anisotropic Magnetoresistive La0.67Sr0.33MnO3 for Biomedical Applications.

We present the design, fabrication, and characterization of an implantable neural interface based on anisotropic magnetoresistive (AMR) magnetic-field sensors that combine reduced size and high performance at body temperature. The sensors are based on La0.67Sr0.33MnO3 (LSMO) as a ferromagnetic material, whose epitaxial growth has been suitably engineered to get uniaxial anisotropy and large AMR output together with low noise even at low frequencies. The performance of LSMO sensors of different film thickness and at different temperatures close to 37 °C has to be explored to find an optimum sensitivity of ∼400%/T (with typical detectivity values of 2 nT·Hz-1/2 at a frequency of 1 Hz and 0.3 nT·Hz-1/2 at 1 kHz), fitted for the detection of low magnetic signals coming from neural activity. Biocompatibility tests of devices consisting of submillimeter-size LSMO sensors coated by a thin poly(dimethyl siloxane) polymeric layer, both in vitro and in vivo, support their high suitability as implantable detectors of low-frequency biological magnetic signals emerging from heterogeneous electrically active tissues.

Electronic Properties of Fully Strained La1-x Sr x MnO3 Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45).

The structural, electronic, and magnetic properties of Sr-hole-doped epitaxial La1-x Sr x MnO3 (0.15 ≤ x ≤ 0.45) thin films deposited using the molecular beam epitaxy technique on 4° vicinal STO (001) substrates are probed by the combination of X-ray diffraction and various synchrotron-based spectroscopy techniques. The structural characterizations evidence a significant shift in the LSMO (002) peak to the higher diffraction angles owing to the increase in Sr doping concentrations in thin films. The nature of the LSMO Mn mixed-valence state was estimated from X-ray photoemission spectroscopy together with the relative changes in the Mn L2,3 edges observed in X-ray absorption spectroscopy (XAS), both strongly affected by doping. CTM4XAS simulations at the XAS Mn L2,3 edges reveal the combination of epitaxial strain, and different MnO6 crystal field splitting give rise to a peak at ∼641 eV. The observed changes in the occupancy of the eg and the t2g orbitals as well as their binding energy positions toward the Fermi level with hole doping are discussed. The room-temperature magnetic properties were probed at the end by circular dichroism.

Evidence of Mn-Ion Structural Displacements Correlated with Oxygen Vacancies in La0.7Sr0.3MnO3 Interfacial Dead Layers.

The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La0.7Sr0.3MnO3 (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn-ion displacements is a prerequisite to engineer the magnetotransport properties of LSMO thin films.

Photoinduced Persistent Electron Accumulation and Depletion in LaAlO_{3}/SrTiO_{3} Quantum Wells.

Persistent photoconductance is a phenomenon found in many semiconductors, by which light induces long-lived excitations in electronic states. Commonly, persistent photoexcitation leads to an increase of carriers (accumulation), though occasionally it can be negative (depletion). Here, we present the quantum well at the LaAlO_{3}/SrTiO_{3} interface, where in addition to photoinduced accumulation, a secondary photoexcitation enables carrier depletion. The balance between both processes is wavelength dependent, and allows tunable accumulation or depletion in an asymmetric manner, depending on the relative arrival time of photons of different frequencies. We use Green's function formalism to describe this unconventional photoexcitation, which paves the way to an optical implementation of neurobiologically inspired spike-timing-dependent plasticity.

Resistance of spheroplasts and whole cells of Pseudomonas aeruginosa to bactericidal activity of various biocides: evidence of the membrane implication.

To emphasise the role of outer and inner membranes in the resistance of Pseudomonas aeruginosa to bactericidal activity of various disinfectants, spheroplasts and whole cells were compared. Spheroplasts are more sensitive than whole cells to quaternary ammonium compounds such as didecyl dimethyl ammonium bromide (DDAB) and C16-benzalkonium chloride. The outer membrane acts as a barrier to prevent these disinfectants from entering the cell. It seems to have no influence on activities of smaller molecules such as C12, C14-benzalkonium chlorides and sodium dichloroisocyanurate. For tri-sodium phosphate, the presence of outer membrane emphasized the action of the molecule. Moreover, resistance of DDAB-adapted spheroplasts to bactericidal activity of DDAB is higher than the resistance of non-adapted spheroplasts. This suggests that the inner membrane could also play a role in resistance to DDAB.