Fabry-Pérot Cavities with Suspended Palladium Membranes on Optical Fibers for Highly Sensitive Hydrogen Sensing.

Hydrogen (H2) sensors are critical to various applications such as the situation where H2 is used as the clean energy for industry or the indicator for human disease diagnosis. Palladium (Pd) is widely used as the hydrogen sensing material in different types of sensors. Optical fiber H2 sensors are particularly promising due to their compactness and spark-free operation. Here, we report a Fabry-Pérot (FP)-cavity-based H2 sensor that is formed with a freestanding Pd membrane and integrated on a conventional single-mode optical fiber end. The freestanding Pd membrane acts both as the active hydrogen sensing material and as one of the reflective mirrors of the cavity. When the Pd film absorbs H2 to form PdHx, it will be stretched, resulting in a change of the cavity length and thus a shift of the interference spectrum. The H2 concentration can be derived from the amplitude of the wavelength shift. Experimental results showed that H2 sensors based on suspended Pd membranes can achieve a detection sensitivity of about 3.6 pm/ppm and a detection limit of about 3.3 ppm. This highly sensitive detection scheme is expected to find applications for sensing low-concentration H2.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications.

In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi2S3 photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W-1, 5.55 × 106%, and 3.68 × 1013 Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi2S3 photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi2S3 nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.

Selective Cocatalyst Decoration of Narrow-Bandgap Broken-Gap Heterojunction for Directional Charge Transfer and High Photocatalytic Properties.

Narrow-bandgap semiconductors are promising photocatalysts facing the challenges of low photoredox potentials and high carrier recombination. Here, a broken-gap heterojunction Bi/Bi2 S3 /Bi/MnO2 /MnOx , composed of narrow-bandgap semiconductors, is selectively decorated by Bi, MnOx nanodots (NDs) to achieve robust photoredox ability. The Bi NDs insertion at the Bi2 S3 /MnO2 interface induces a vertical carrier migration to realize sufficient photoredox potentials to produce O2 •- and • OH active species. The surface decoration of Bi2 S3 /Bi/MnO2 by Bi and MnOx cocatalysts drives electrons and holes in opposite directions for optimal photogenerated charge separation. The selective cocatalysts decoration realizes synergistic surface and bulk phase carrier separation. Density functional theory (DFT) calculation suggests that Bi and MnOx NDs act as active sites enhancing the absorption and reactants activation. The decorated broken-gap heterojunction demonstrates excellent performance for full-light driving organic pollution degradation with great commercial application potential.

Ultrabroadband Imaging Based on Wafer-Scale Tellurene.

High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107  A W-1 , 8.2 × 109 % and 4.5 × 1015  Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.

Deterministic Excitation of Polarization-Sensitive Extrinsic Anapole State in Si Nanodisk Clusters.

Nanoparticle clusters provide new degrees of freedom for light control due to their mutual interaction compared with an individual one. Here, the authors demonstrate theoretically and experimentally a type of optical anapole (a nonradiating state) termed as extrinsic anapole, with mode field spreading across Si nanodisk dimers unlike the intrinsic one that is confined within individual nanodisks. The extrinsic anapole is sensitive to the polarized excitation. When the electric vector E of excitation is perpendicular to the dimer axis, the coupled toroidal dipole (TD) mode is largely enhanced and broadened to be spectrally overlapped with the electric dipole (ED) mode. The destructive interference of these two modes results in the generation of the extrinsic anapole. However, it vanishes when E is parallel to the dimer axis. Such polarization dependence can be relieved with the participation of the third nanodisk. Scattering spectra of Si nanodisk trimers stay almost unchanged under different polarized excitations, although the near-field distributions are quite different. Finally, enhanced white-light emission is observed in Si nanodisk clusters, which can be attributed to the near-infrared absorption enhancement induced by extrinsic anapole states. The findings manifest that high-index all-dielectric nanodisk clusters are promising for light manipulation based on mode interference.

Large-Area Ordered Palladium Nanostructures by Colloidal Lithography for Hydrogen Sensing.

Reliable gas sensors are very important for hydrogen (H2) gas detection and storage. Detection methods based on palladium (Pd) metal are cost-effective and widely studied. When Pd is exposed to H2, it turns into palladium hydride with modified optical properties, which thus can be monitored for H2 sensing. Here, we fabricated large-area Pd nanostructures, including Pd nanotriangles and nanohole arrays, using colloidal lithography and systematically studied their H2-sensing performance. After hydrogen absorption, both the Pd nanoholes and nanotriangles showed clear transmittance changes in the visible-near infrared range, consistent with numerical simulation results. The influences of the structural parameters (period of the array P and diameter of the nanohole D) of the two structures are further studied, as different structural parameters can affect the hydrogen detection effect of the two structures. The nanohole arrays exhibited bigger transmittance changes than the nanotriangle arrays.

Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology.

A selective-area oxidation strategy is developed to polarize high-symmetry 2D layered materials (2DLMs). The dichroic ratio of the derived O-WS2/WS2 photodetector reaches ∼8, which is competitive among state-of-the-art polarization photodetectors. Finite-different time-domain simulations consolidate that the polarization-sensitive photoresponse is associated with anisotropic spacial confinement, which gives rise to distinct dielectric contrasts for linearly polarized light of various directions and thus the polarization-dependent near-field distribution. Furthermore, selective-area oxidation treatment brings about dual effects, comprising the in situ formation of seamless in-plane WS2 homojunctions by thickness tailoring and the formation of out-of-plane O-WS2/WS2 heterojunctions. As a consequence, the recombination of photocarriers is markedly suppressed, resulting in outstanding photosensitivity with the optimized responsivity, external quantum efficiency, and detectivity of 0.161 A/W, 49.4%, and 1.4 × 1011 Jones for an O-WS2/WS2 photodetector in a self-powered mode. A scheme of multiplexing optical communications is revealed by harnessing the intensity and polarization state of light as independent transmission channels. Furthermore, dynamic encryption by leveraging the polarization state as a secret key is proposed. In the end, broad universality is reinforced through the induction of linear dichroism within 2D WSe2 crystals. On the whole, this study provides an additional perspective on polarization optoelectronics based on 2DLMs.

High-performance hierarchical O-SnS/I-ZnIn2S4 photodetectors by leveraging the synergy of optical regulation and band tailoring.

Low light absorption and limited carrier lifetime are critical obstacles inhibiting further performance improvement of 2D layered material (2DLM) based photodetectors, while scalable fabrication is an ongoing challenge prior to commercialization from the lab to market. Herein, wafer-scale SnS/ZIS hierarchical nanofilms, where out-of-plane SnS (O-SnS) is modified onto in-plane ZIS (I-ZIS), have been achieved by pulsed-laser deposition. The derived O-SnS/I-ZIS photodetector exhibits markedly boosted sensitivity as compared to a pristine ZIS device. The synergy of multiple functionalities contributes to the dramatic improvement, including the pronounced light-trapping effect of O-SnS by multiple scattering, the high-efficiency spatial separation of photogenerated electron-hole pairs by a type-II staggered band alignment and the promoted carrier transport enabled by the tailored electronic structure of ZIS. Of note, the unique architecture of O-SnS/I-ZIS can considerably expedite the carrier dynamics, where O-SnS promotes the electron transfer from SnS to ZIS whilst the I-ZIS enables high-speed electron circulation. In addition, the interlayer transition enables the bridging of the effective optical window to telecommunication wavelengths. Moreover, monolithic integration of arrayed devices with satisfactory device-to-device variability has been encompassed and a proof-of-concept imaging application is demonstrated. On the whole, this study depicts a fascinating functional coupling architecture toward implementing chip-scale integrated optoelectronics.

Etching-free high-throughput intersectional nanofabrication of diverse optical nanoantennas for nanoscale light manipulation.

The capabilities to manipulate light-matter interaction at the nanoscale lie at the core of many promising photonic applications. Optical nanoantennas, made of metallic or dielectric materials, have seen a rapid development for their remarkable optical properties facilitating the coupling of electromagnetic waves with subwavelength entities. However, high-throughput and cost-effective fabrication of these nanoantennas is still a daunting challenge. In this work, we provide a versatile nanofabrication method capable of producing large scale optical nanoantennas with different shapes. It is developed from colloidal lithography with no dry etching required. Furthermore, both metallic and all-dielectric nanoantennas can be readily fabrication in a high-throughput fashion. Au and Si nanodisks were fabricated and employed to assemble heterostructures with monolayer tungsten disulfide. Strong coupling is observed in both systems between plasmon modes (Au nanodisks) or anapole modes (Si nanodisks) with excitons. We believe that this nanofabrication method could find a wide range of applications with the diverse optical nanoantennas it can engineer.

Morphology Effect of Bismuth Vanadate on Electrochemical Sensing for the Detection of Paracetamol.

Morphology-control, as a promising and effective strategy, is widely implemented to change surface atomic active sites and thus enhance the intrinsic electrocatalytic activity and selectivity. As a typical n-type semiconductor, a series of bismuth vanadate samples with tunable morphologies of clavate, fusiform, flowered, bulky, and nanoparticles were prepared to investigate the morphology effect. Among all the synthesized samples, the clavate shaped BiVO4 with high index facets of (112), (301), and (200) exhibited reduced extrinsic pseudocapacitance and enhanced redox response, which is beneficial for tackling the sluggish voltammetric response of the traditional nanoparticle on the electrode surface. Benefiting from the large surface-active area and favorable ion diffusion channels, the clavate shaped BiVO4 exhibited the best electrochemical sensing performance for paracetamol with a linear response in the range of 0.5-100 µmol and a low detection limit of 0.2 µmol. The enhanced electrochemical detection of paracetamol by bismuth vanadate nanomaterials with controllable shapes indicates their potential for applications as electrochemical sensors.

In situ integration of Te/Si 2D/3D heterojunction photodetectors toward UV-vis-IR ultra-broadband photoelectric technologies.

Over the past decade, 2D elemental semiconductors have emerged as an ever-increasingly important group in the 2D material family due to their simple crystal structures and compositions, and versatile physical properties. Taking advantage of the relatively small bandgap, outstanding carrier mobility, high air-stability and strong interactions with light, 2D tellurium (Te) has emerged as a compelling candidate for use in ultra-broadband photoelectric technologies. In this study, high-quality centimeter-scale Te nanofilms have been successfully produced by exploiting pulsed-laser deposition (PLD). By performing deposition on pre-patterned SiO2/Si substrates, a Te/Si 2D/3D heterojunction array is formed in situ. To our delight, taking advantage of the relatively small bandgap of Te, the Te/Si photodetectors demonstrate an ultra-broadband photoresponse from ultraviolet to near-infrared (370.6 nm to 2240 nm), enabling them to serve as important alternatives to conventional 2D materials such as MoS2. In addition, an outstanding on/off ratio of ∼108 and a fast response rate (a response/recovery time of 3.7 ms/4.4 ms) are achieved, which is associated with the large band offset and strong interfacial built-in electric field that contribute to suppressing the dark current and separating photocarriers. Beyond these, a 35 × 35 matrix array has been successfully constructed, where the devices exhibit comparable properties, with a production yield of 100% for 100 randomly tested devices. The average responsivity, external quantum efficiency and detectivity reach 249 A W-1, 76 350% and 1.15 × 1011 Jones, respectively, making the Te/Si devices among the best-performing 2D/3D heterojunction photodetectors. On the whole, this study has established that PLD is a promising technique for producing high-quality Te nanofilms with good scalability, and the Te/Si 2D/3D heterojunction provides a promising platform for implementing high-performance ultra-broadband photoelectronic technologies.

Ultra-narrow-band metamaterial perfect absorber based on surface lattice resonance in a WS2 nanodisk array.

Metamaterial perfect absorbers (MPAs) are attractive platforms for the unique manipulation of electromagnetic waves from near-field to far-field. Narrow-band MPAs are particularly intriguing for their potential applications as thermal emitters or biosensors. In this work, we proposed ultra-narrow-band MPAs based on surface lattice resonance (SLR) modes of WS2 nanodisk arrays on gold films. The SLR modes stem from the coupling between the magnetic dipole modes of individual nanodisks and the Rayleigh anomaly of the array giving rise to high quality-factor resonances. With proper design of the nanodisk array, an ultra-narrow-band of 15 nm is achieved in the near infrared wavelength range. The underneath gold film provides the loss channel converting the incident light within the narrow band into heat in the gold film, effectively creating a perfect absorber. Systematic numerical simulations were performed to investigate the effects of the geometrical parameters on their optical properties, demonstrating the great tunability of this type of MPAs as well as their potential for engineering light-matter interactions.

Directional radiation and photothermal effect enhanced control of 2D excitonic emission based on germanium nanoparticles.

Dielectric nanostructures with Mie resonances have shown promising applications for building nanoantennas and metasurfaces. Coupling between Mie resonators and transition metal dichalcogenide (TMDC) monolayers is of great significance, because the existence of Mie resonances can modulate phases and radiation directions effectively. Recently, monolayer binary and ternary TDMCs have drawn more attention owing to the intriguing and tunable excitonic states from visible to near infrared. However, the coupling mechanism between monolayer TMDCs and Mie resonators has not been well studied. Moreover, it is still a great challenge to realize the control of excitonic emission wavelength and intensity simultaneously. Here, for the first time, we demonstrate that germanium nanoparticles (Ge NPs), a typical high refractive index dielectric Mie resonator, are capable of controlling both the intensity and direction of PL emissions in the near-infrared from monolayer WSe2(1-x)Te2x. Through putting Ge NPs below or above monolayers, we observed the obvious emission directivity because of the higher refractive index and higher loss of Ge than silicon. Besides, higher absorption in Ge NPs brings photothermal effects during the interaction with TMDCs. These findings indicate that Ge-based Mie resonators may guide the design of new type nanophotonics devices in the future.

Direct-indirect bandgap transition in monolayer MoS2 induced by an individual Si nanoparticle.

MoS2 is promising for the next generation of electronic and optoelectronic devices by virtue of its unique optical, electrical and mechanical properties. Bandgap engineering of it is an interesting topic. However, the reported factors including temperature, defect, strain and external electric field are difficult to handle precisely. Here, we demonstrated direct-indirect bandgap transition in monolayer MoS2 induced by an individual Si nanoparticle. We observed photoluminescence (PL) emission with obvious spectral redshift and broadening in the MoS2/Si heterostructures after depositing Si nanoparticles onto the surface of monolayer MoS2. Raman spectra of heterostructures show measurable shifts in contrast with the bare MoS2. Energy transfer between MoS2 and Si nanoparticles did not happen, which is demonstrated by scattering spectra of MoS2/Si heterostructures. In addition, the natural oxide layer presented on the surface of Si nanoparticles can effectively prevent the carrier transferring from Si nanoparticles to MoS2. Thus, we attribute the direct-indirect bandgap transition of monolayer MoS2 to the strain induced by Si nanoparticles controlled by their sizes. The PL intensity of MoS2/Si heterostructure depends on the size of Si nanoparticles, resulting from the enhanced optical absorption of monolayer MoS2 based on Mie resonances of Si nanoparticles. The MoS2/Si heterostructure is promising for photodetector and circuit integration.

Trapping and filtering of light by single Si nanospheres in a GaAs nanocavity.

The arbitrary manipulation of optical waves in the subwavelength dimension is a fundamental issue for the microminiaturization and integration of optic parts. In the past decade, major efforts were focused on the surface plasmon resonance mostly exhibited by metallic nanostructures, which could effectively capture and concentrate the visible light at the cost of high levels of intrinsic losses. However, the use of all-dielectric nanostructures can avoid the abovementioned problem due to lower intrinsic losses and the presence of abundant resonance modes. Herein, as a kind of building block for light manipulation, GaAs nanogrooves were fabricated and studied to obtain comprehensive information about the resonance modes in an individual all-dielectric nanogroove; by placing a single Si nanosphere in an isolated GaAs nanocavity, the nanogroove scattering could be controlled depending on the coupling strength of nanogrooves. The Lorentzian line approximation and harmonic oscillator coupling model were used to pursue the interactions among the resonance modes. Experimental and theoretical studies showed that this heterostructure could trap the broadband visible light in the back and filter the light with a specific wavelength in the front. These findings suggest that the proposed heterostructure can act as a light filter and an antenna on nanophotonic chips due to its unique optical properties.

Tunable Control of Interlayer Excitons in WS2/MoS2 Heterostructures via Strong Coupling with Enhanced Mie Resonances.

Strong Coulomb interactions in monolayer transition metal dichalcogenides (TMDs) produce strongly bound excitons, trions, and biexcitons. The existence of multiexcitonic states has drawn tremendous attention because of its promising applications in quantum information. Combining different monolayer TMDs into van der Waals (vdW) heterostructures opens up opportunities to engineer exciton devices and bring new phenomena. Spatially separated electrons and holes in different layers produce interlayer excitons. Although much progress has been made on excitons in single layers, how interlayer excitons contribute the photoluminescence emission and how to tailor the interlayer exciton emission have not been well understood. Here, room temperature strong coupling between interlayer excitons in the WS2/MoS2 vdW heterostructure and cavity-enhanced Mie resonances in individual silicon nanoparticles (Si NPs) are demonstrated. The heterostructures are inserted into a Si film-Si NP all-dielectric platform to realize effective energy exchanges and Rabi oscillations. Besides mode splitting in scattering, tunable interlayer excitonic emission is also observed. The results make it possible to design TMDs heterostructures with various excitonic states for future photonics devices.

Directional Fano Resonance in an Individual GaAs Nanospheroid.

Fano resonance has been observed in a wide variety of nanophotonic structures such as photonic crystals, plasmonic structures, and metamaterials. It arises from the interference of discrete resonance states with broadband continuum states. As an emerging nanophotonic material, high-index all-dielectric nanomaterials provide a new platform to achieve Fano resonance by virtue of the simultaneous excited electric and magnetic resonances. However, to date, Fano resonance in the visible region has not been observed in individual high-index all-dielectric nanoparticles. Here, for the first time, the experimental observation of the directional Fano resonance is reported in an individual GaAs nanospheroid. The special geometry enables GaAs nanospheroids to generate spectrally overlapped electric and magnetic dipole resonances, which enhances their spectral coupling, giving rise to asymmetric-shaped backward scattering spectrum. This directional Fano resonance can be tuned by the aspect ratio of nanospheroids as well as excitation polarization. In addition, efficient directional light scattering is realized at the total scattering peak of the GaAs nanospheroid. The forward-to-backward scattering ratio can be largely enhanced due to Fano dip in the backward scattering spectrum. These findings suggest that high-index all-dielectric nanospheroid is a promising candidate for directional sources and optical switches.

Active tuning of the Fano resonance from a Si nanosphere dimer by the substrate effect.

All-dielectric materials have aroused great interest for their unique light scattering and lower losses compared with plasmonics. Generally, optical properties made by all-dielectric materials can be passively controlled by varying the geometry, size and refractive index at the design stage. Therefore, the realization of active tuning in the field of nanophotonics is important to improve the practicality and achieve light-on-chip technology in the future. Herein, we combine the high refractive index of Si and the phase transition of VO2 to form an active tuning hybrid nanostructure with higher quality factor by depositing Si nanospheres on the VO2 layer with an Al2O3 substrate. As the temperature goes up, the refractive index of the VO2 layer switches from high to low. The scattering intensity of the magnetic dipole resonance of Si nanospheres decreases differently depending on their size, while the intensity of the electric dipole resonance remains almost unchanged. Meanwhile, Fano resonances are observed in the Si nanosphere dimers with a continuous variable Fano lineshape when adjusting the temperature. Mie theory and substrate-induced resonant magneto-electric effects are used to analyze and explain these phenomena. Tuning of the Fano resonance is attributed to the substrate effect from the interaction between Si nanospheres and phase transition of the VO2 layer with temperature. These light scattering properties of such a hybrid nanostructure make it promising for temperature sensing or as a light source at the nanometer scale.

The optical duality of tellurium nanoparticles for broadband solar energy harvesting and efficient photothermal conversion.

Nanophotonic materials for solar energy harvesting and photothermal conversion are urgently needed to alleviate the global energy crisis. We demonstrate that a broadband absorber made of tellurium (Te) nanoparticles with a wide size distribution can absorb more than 85% solar radiation in the entire spectrum. Temperature of the absorber irradiated by sunlight can increase from 29° to 85°C within 100 s. By dispersing Te nanoparticles into water, the water evaporation rate is improved by three times under solar radiation of 78.9 mW/cm2. This photothermal conversion surpasses that of plasmonic or all-dielectric nanoparticles reported before. We also establish that the unique permittivity of Te is responsible for the high performance. The real part of permittivity experiences a transition from negative to positive in the ultraviolet-visible-near-infrared region, which endows Te nanoparticles with the plasmonic-like and all-dielectric duality. The total absorption covers the entire spectrum of solar radiation due to the enhancement by both plasmonic-like and Mie-type resonances. It is the first reported material that simultaneously has plasmonic-like and all-dielectric properties in the solar radiation region. These findings suggest that the Te nanoparticle can be expected to be an advanced photothermal conversion material for solar-enabled water evaporation.

Electrically Controlled Scattering in a Hybrid Dielectric-Plasmonic Nanoantenna.

Electrically tunable devices in nanophotonics offer an exciting opportunity to combine electrical and optical functions, opening up their applications in active photonic devices. Silicon as a kind of high refractive index dielectric material has shown comparable performances with plasmonic nanostructures in tailoring and modulating the electromagnetic waves. However, there are few studies on electrically tunable silicon nanoantennas. Here, for the first time we realize the spectral tailoring of an individual silicon nanoparticle in the visible range through changing the applied voltage. We observe that the plasmon-dielectric hybrid resonant peaks experience blue shift and obvious intensity attenuation with increasing the bias voltages from 0 to 1.5 V. A physical model has been established to explain how the applied voltage influences the carrier concentration and how carrier concentration modifies the permittivity of silicon and then the final scattering spectra. Our findings pave a new approach to build excellent tunable nanoantennas or other nanophotonics devices where the optical responses can be purposely controlled by electrical signals.