Laser deposited biocompatible Ca-P coatings on Ti-6Al-4V: microstructural evolution and thermal modeling.

A high intensity continuous wave diode pumped ytterbium laser source was used to deposit Ca-P coatings on a Ti-6Al-4V biocompatible alloy in order to generate a physically textured surface, enhancing osseointegration. Scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS) studies were coupled with X-ray and micro diffraction work to determine the structure, composition, and phases present in various zones of a sample prepared across the coating/substrate interaction zone. Three-dimensional thermal modeling was also carried out to determine the cooling rate and maximum temperature experienced by different regions of the substrate. Combining these results provide us with valuable insights regarding the thermo-physical as well as chemical interactions that take place across the coating-substrate interface.

The influence of high dielectric constant aluminum oxide sputter deposition on the structure and properties of multilayer epitaxial graphene.

High dielectric constant aluminum oxide (Al(2)O(3)) is frequently used as the gate oxide in high electron mobility transistors and the impact of its deposition by radio frequency (RF) magnetron sputtering on the structural and electrical properties of multilayer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) is reported. Micro-Raman spectroscopy and temperature dependent Hall mobility measurements reveal that the processing induced changes to the structural and electrical properties of the MLG can be minimal when the oxide deposition conditions are optimal. High-resolution transmission electron microscopy (HRTEM) analysis confirms that the Al(2)O(3)/MLG interface is relatively sharp and that our thickness approximation of the MLG using angle resolved x-ray photoelectron spectroscopy (ARXPS) is accurate. An interface trap density of 5.1 × 10(10) eV(-1) cm(-2) was determined using capacitance-voltage techniques. The totality of our results indicates that ARXPS can be used as a nondestructive tool to measure the thickness of MLG, and that RF sputtered Al(2)O(3) can be used as a high dielectric (high-k) constant gate oxide in multilayer graphene based transistor applications.