Targeted modifications of monolithic multiterminal superconducting weak-links.

In a multi-branch metallic interconnect we demonstrate the possibility to induce targeted modifications of the material properties by properly selecting the intensity and polarity of the applied current. We illustrate this effect in Y-shape multiterminal devices made of Nb on sapphire for which we show that the superconducting critical current can be lowered in a controlled manner at a preselected junction. We further observe the gradual appearance of Fraunhofer-like critical current oscillations with magnetic field which indicates the gradual modification of a superconducting weak link. This method permits progressive modifications of a hand-picked junction without affecting the neighboring terminals. The proposed approach has the benefit of being inexpensive and requiring conventional electronics. This technique represents a major step toward all-electric control of multiterminal Josephson junctions.

Quantum Confinement Suppressing Electronic Heat Flow below the Wiedemann-Franz Law.

The Wiedemann-Franz law states that the charge conductance and the electronic contribution to the heat conductance are proportional. This sets stringent constraints on efficiency bounds for thermoelectric applications, which seek a large charge conduction in response to a small heat flow. We present experiments based on a quantum dot formed inside a semiconducting InAs nanowire transistor, in which the heat conduction can be tuned significantly below the Wiedemann-Franz prediction. Comparison with scattering theory shows that this is caused by quantum confinement and the resulting energy-selective transport properties of the quantum dot. Our results open up perspectives for tailoring independently the heat and electrical conduction properties in semiconductor nanostructures.

Direct Probe of the Seebeck Coefficient in a Kondo-Correlated Single-Quantum-Dot Transistor.

We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental thermoelectric parameter is obtained by directly monitoring the magnitude of the voltage induced in response to a temperature difference across the junction, while keeping a zero net tunneling current through the device. In contrast to bulk materials and single molecules probed in a scanning tunneling microscopy (STM) configuration, investigating the thermopower in nanoscale electronic transistors benefits from the electric tunability to showcase prominent quantum effects. Here, striking sign changes of the Seebeck coefficient are induced by varying the temperature, depending on the spin configuration in the quantum dot. The comparison with numerical renormalization group (NRG) calculations demonstrates that the tunneling density of states is generically asymmetric around the Fermi level in the leads, both in the cotunneling and Kondo regimes.