Electric-field-induced non-ergodic relaxor to ferroelectric transition in BiFeO3-xSrTiO3 ceramics.

While BiFeO3-based solid solutions show great promise for applications in energy conversion and storage, realizing this promise necessitates understanding the structure-property relationship in particular pertaining to the relaxor-like characteristics often exhibited by solid solutions with polar-to-non-polar morphotropic phase boundaries. To this end, we investigated the role of the compositionally-driven relaxor state in (100 - x)BiFeO3-xSrTiO3 [BFO-xSTO], via in situ synchrotron X-ray diffraction under bipolar electric-field cycling. The electric-field induced changes to the crystal structure, phase fraction and domain textures were monitored via the {111}pc, {200}pc, and 1/2{311}pc Bragg peaks. The dynamics of the intensities and positions of the (111) and (111̄) reflections reveal an initial non-ergodic regime followed by long-range ferroelectric ordering after extended poling cycles. The increased degree of random multi-site occupation in BFO-42STO compared to BFO-35STO is correlated with an increase of the critical electric field needed to induce the non-ergodic-to-ferroelectric transition, and a decrease in the degree of domain reorientation. Although both compositions show an irreversible transition to a long-range ferroelectric state, our results suggest that the weaker ferroelectric response in BFO-42STO is related to an increase in ergodicity. This, in turn, serves to guide the development of BFO-based systems into promising platform for further property engineering towards specific capacitor applications.

Domain-wall pinning and defect ordering in BiFeO3 probed on the atomic and nanoscale.

Electro-mechanical interactions between charged point defects and domain walls play a key role in the functional properties of bulk and thin-film ferroelectrics. While for perovskites the macroscopic implications of the ordering degree of defects on domain-wall pinning have been reported, atomistic details of these mechanisms remain unclear. Here, based on atomic and nanoscale analyses, we propose a pinning mechanism associated with conductive domain walls in BiFeO3, whose origin lies in the dynamic coupling of the p-type defects gathered in the domain-wall regions with domain-wall displacements under applied electric field. Moreover, we confirm that the degree of defect ordering at the walls, which affect the domain-wall conductivity, can be tuned by the cooling rate used during the annealing, allowing us to determine how this ordering affects the atomic structure of the walls. The results are useful in the design of the domain-wall architecture and dynamics for emerging nanoelectronic and bulk applications.

Electrochemical Reduction of Undoped and Cobalt-Doped BiFeO3 Induced by Water Exposure: Quantitative Determination of Reduction Potentials and Defect Energy Levels Using Photoelectron Spectroscopy.

The interaction of BiFeO3 and Co-doped BiFeO3 thin-film surfaces with water vapor is examined using photoelectron spectroscopy. Water exposure results in an upward shift of the Fermi energy, which is limited by the reduction of Bi and Fe in undoped BiFeO3 and by the reduction of Co in oxidized Co-doped BiFeO3. The results highlight the importance of surface potential changes induced by the interaction of solid surfaces with water and the ability of photoelectron spectroscopy to quantitatively determine electrochemical reduction potentials and defect energy levels.

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects.

Mobile charged defects, accumulated in the domain-wall region to screen polarization charges, have been proposed as the origin of the electrical conductivity at domain walls in ferroelectric materials. Despite theoretical and experimental efforts, this scenario has not been directly confirmed, leaving a gap in the understanding of the intriguing electrical properties of domain walls. Here, we provide atomic-scale chemical and structural analyses showing the accumulation of charged defects at domain walls in BiFeO3. The defects were identified as Fe4+ cations and bismuth vacancies, revealing p-type hopping conduction at domain walls caused by the presence of electron holes associated with Fe4+. In agreement with the p-type behaviour, we further show that the local domain-wall conductivity can be tailored by controlling the atmosphere during high-temperature annealing. This work has possible implications for engineering local conductivity in ferroelectrics and for devices based on domain walls.