High Verdet constant of Te20As30Se50 glass in the mid-infrared.

Magneto-optical properties of tellurium-arsenic-selenium glass (${{\rm Te}_{20}}{{\rm As}_{30}}{{\rm Se}_{50}}$Te20As30Se50) were measured and analyzed. A Verdet constant of 15.18 rad/T/m at 1950 nm with the figure of merit of more than 8.72 rad/T, which is the highest value reported in glass materials at this wavelength, was measured. Compared to other chalcogenide glasses, such as ${{\rm Ge}_{10}}{{\rm Se}_{90}}$Ge10Se90 and ${{\rm Ge}_{25}}{{\rm As}_{15}}{{\rm S}_{60}}$Ge25As15S60, ${{\rm Te}_{20}}{{\rm As}_{30}}{{\rm Se}_{50}}$Te20As30Se50 glass exhibits higher Verdet constants, broader mid-infrared transparency window, and longer infrared absorption edge, making it a very promising material to fabricate magneto-optical devices for mid-infrared applications.

Noise sources and improved performance of a mid-wave infrared uncooled silicon carbide optical photodetector.

An uncooled photon detector is fabricated for the mid-wave infrared (MWIR) wavelength of 4.21 µm by doping an n-type 4H-SiC substrate with gallium using a laser doping technique. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 µm. This energy level was confirmed by optical absorption spectroscopy. The detection mechanism involves photoexcitation of carriers by the photons of this wavelength absorbed in the semiconductor. The resulting changes in the carrier densities at different energy levels modify the refractive index and, therefore, the reflectance of the semiconductor. This change in the reflectance constitutes the optical response of the detector, which can be probed remotely with a laser beam such as a He-Ne laser and the power of the reflected probe beam can be measured with a conventional laser power meter. The noise mechanisms in the probe laser, silicon carbide MWIR detector, and laser power meter affect the performance of the detector in regards to aspects such as the responsivity, noise equivalent temperature difference (NETD), and detectivity. For the MWIR wavelengths of 4.21 and 4.63 µm, the experimental detectivity of the optical photodetector of this study was found to be 1.07×10(10) cm·Hz(1/2)/W, while the theoretical value was 1.11×10(10) cm·Hz(1/2)/W. The values of NETD are 404 and 15.5 mK based on experimental data for an MWIR radiation source with a temperature of 25°C and theoretical calculations, respectively.

Optical correlator based target detection, recognition, classification, and tracking.

A dedicated automatic target recognition and tracking optical correlator (OC) system using advanced processing technology has been developed. Rapidly cycling data-cubes with size, shape, and orientation are employed with software algorithms to isolate correlation peaks and enable tracking of targets in maritime environments with future track prediction. The method has been found superior to employing maximum average correlation height filters for which the correlation peak intensity drops off in proportion to the number of training images. The physical dimensions of the OC system may be reduced to as small as 2 in. × 2 in. × 3 in. (51 mm × 51 mm × 76 mm) by modifying and minimizing the OC components.

Stand-off detection of solid targets with diffuse reflection spectroscopy using a high-power mid-infrared supercontinuum source.

We measure the diffuse reflection spectrum of solid samples such as explosives (TNT, RDX, PETN), fertilizers (ammonium nitrate, urea), and paints (automotive and military grade) at a stand-off distance of 5 m using a mid-infrared supercontinuum light source with 3.9 W average output power. The output spectrum extends from 750-4300 nm, and it is generated by nonlinear spectral broadening in a 9 m long fluoride fiber pumped by high peak power pulses from a dual-stage erbium-ytterbium fiber amplifier operating at 1543 nm. The samples are distinguished using unique spectral signatures that are attributed to the molecular vibrations of the constituents. Signal-to-noise ratio (SNR) calculations demonstrate the feasibility of increasing the stand-off distance from 5 to ~150 m, with a corresponding drop in SNR from 28 to 10 dB.

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 µm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21 µm wavelength.