Tunneling current-controlled spin states in few-layer van der Waals magnets.

Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4.

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

Exchange-Driven Chern States in High-Mobility Intrinsic Magnetic Topological Insulators.

The layer-dependent Chern number (C) in MnBi_{2}Te_{4} is characterized by the presence of a Weyl semimetal state in the ferromagnetic coupling. However, the influence of a key factor, namely, the exchange coupling, remains unexplored. This study focuses on characterizing the C=2 state in MnBi_{2}Te_{4}, which is classified as a higher C state resulting from the anomalous n=0 Landau levels (LLs). Our findings demonstrate that the exchange coupling parameter strongly influences the formation of this Chern state, leading to a competition between the C=1 and 2 states. Moreover, the emergence of odd-even LL sequences, resulting from the breaking of LL degeneracy, provides compelling evidence for the strong exchange coupling strength. These findings highlight the significance of the exchange coupling in understanding the behavior of Chern states and LLs in magnetic quantum systems.

Hidden non-collinear spin-order induced topological surface states.

Rare-earth monopnictides are a family of materials simultaneously displaying complex magnetism, strong electronic correlation, and topological band structure. The recently discovered emergent arc-like surface states in these materials have been attributed to the multi-wave-vector antiferromagnetic order, yet the direct experimental evidence has been elusive. Here we report observation of non-collinear antiferromagnetic order with multiple modulations using spin-polarized scanning tunneling microscopy. Moreover, we discover a hidden spin-rotation transition of single-to-multiple modulations 2 K below the Néel temperature. The hidden transition coincides with the onset of the surface states splitting observed by our angle-resolved photoemission spectroscopy measurements. Single modulation gives rise to a band inversion with induced topological surface states in a local momentum region while the full Brillouin zone carries trivial topological indices, and multiple modulation further splits the surface bands via non-collinear spin tilting, as revealed by our calculations. The direct evidence of the non-collinear spin order in NdSb not only clarifies the mechanism of the emergent topological surface states, but also opens up a new paradigm of control and manipulation of band topology with magnetism.

High-entropy engineering of the crystal and electronic structures in a Dirac material.

Dirac and Weyl semimetals are a central topic of contemporary condensed matter physics, and the discovery of new compounds with Dirac/Weyl electronic states is crucial to the advancement of topological materials and quantum technologies. Here we show a widely applicable strategy that uses high configuration entropy to engineer relativistic electronic states. We take the AMnSb2 (A = Ba, Sr, Ca, Eu, and Yb) Dirac material family as an example and demonstrate that mixing of Ba, Sr, Ca, Eu and Yb at the A site generates the compound (Ba0.38Sr0.14Ca0.16Eu0.16Yb0.16)MnSb2 (denoted as A5MnSb2), giving access to a polar structure with a space group that is not present in any of the parent compounds. A5MnSb2 is an entropy-stabilized phase that preserves its linear band dispersion despite considerable lattice disorder. Although both A5MnSb2 and AMnSb2 have quasi-two-dimensional crystal structures, the two-dimensional Dirac states in the pristine AMnSb2 evolve into a highly anisotropic quasi-three-dimensional Dirac state triggered by local structure distortions in the high-entropy phase, which is revealed by Shubnikov-de Haas oscillations measurements.

Crystallographic Disorder and Strong Magnetic Anisotropy in Dy3Pt2Sb4.48.

We report the crystal growth and characterization of a rare-earth-containing material, Dy3.00(1)Pt2Sb4.48(2). This compound possesses a similar structure to the previously reported Y3Pt4Ge6, but it lacks two layers of Pt atoms. Crystallographic disorder was found in Dy3.00(1)Pt2Sb4.48(2). Additionally, the Dy-Dy framework was found to have both square net and triangular lattices. Dy3.00(1)Pt2Sb4.48(2)8 was determined to be antiferromagnetically ordered around ∼15 K while a competing antiferromagnetic sublattice also exists at lower temperature. Strong magnetic anisotropy was observed, and several metamagnetic transitions were seen in the hysteresis loops. Furthermore, the Curie-Weiss fitting revealed an unusually small effective moment of Dy, which is far below the expected value of Dy3+ (10.65 µB). This material might provide a new platform to study the relationship between crystallographic disorder and magnetism.

Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating.

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI3-based tunnel junctions. The few-layer CrI3-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI3. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI3 via gating-induced Jahn-Teller distortion. Our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

Strong electron-phonon coupling driven pseudogap modulation and density-wave fluctuations in a correlated polar metal.

There is tremendous interest in employing collective excitations of the lattice, spin, charge, and orbitals to tune strongly correlated electronic phenomena. We report such an effect in a ruthenate, Ca3Ru2O7, where two phonons with strong electron-phonon coupling modulate the electronic pseudogap as well as mediate charge and spin density wave fluctuations. Combining temperature-dependent Raman spectroscopy with density functional theory reveals two phonons, B2P and B2M, that are strongly coupled to electrons and whose scattering intensities respectively dominate in the pseudogap versus the metallic phases. The B2P squeezes the octahedra along the out of plane c-axis, while the B2M elongates it, thus modulating the Ru 4d orbital splitting and the bandwidth of the in-plane electron hopping; Thus, B2P opens the pseudogap, while B2M closes it. Moreover, the B2 phonons mediate incoherent charge and spin density wave fluctuations, as evidenced by changes in the background electronic Raman scattering that exhibit unique symmetry signatures. The polar order breaks inversion symmetry, enabling infrared activity of these phonons, paving the way for coherent light-driven control of electronic transport.

Bipolaronic Nature of the Pseudogap in Quasi-One-Dimensional (TaSe4)2I Revealed via Weak Photoexcitation.

The origin of the pseudogap in many strongly correlated materials has been a longstanding puzzle. Here, we present experimental evidence that many-body interactions among small Holstein polarons, i.e., the formation of bipolarons, are primarily responsible for the pseudogap in (TaSe4)2I. After weak photoexcitation of the material, we observe the appearance of both dispersive (single-particle bare band) and flat bands (single-polaron sub-bands) in the gap by using time- and angle-resolved photoemission spectroscopy. Based on Monte Carlo simulations of the Holstein model, we propose that the melting of pseudogap and emergence of new bands originate from a bipolaron to single-polaron crossover. We also observe dramatically different relaxation times for the excited in-gap states in (TaSe4)2I (∼600 fs) compared with another 1D material Rb0.3MoO3 (∼60 fs), which provides a new method for distinguishing between pseudogaps induced by polaronic or Luttinger-liquid many-body interactions.

Anomalous Landau quantization in intrinsic magnetic topological insulators.

The intrinsic magnetic topological insulator, Mn(Bi1-xSbx)2Te4, has been identified as a Weyl semimetal with a single pair of Weyl nodes in its spin-aligned strong-field configuration. A direct consequence of the Weyl state is the layer dependent Chern number, [Formula: see text]. Previous reports in MnBi2Te4 thin films have shown higher [Formula: see text] states either by increasing the film thickness or controlling the chemical potential. A clear picture of the higher Chern states is still lacking as data interpretation is further complicated by the emergence of surface-band Landau levels under magnetic fields. Here, we report a tunable layer-dependent [Formula: see text] = 1 state with Sb substitution by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dual-gated devices-consistent with calculations of the bulk Weyl point separation in the doped thin films. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted by a theory of surface and bulk spin-polarised Landau level spectra in thin film magnetic topological insulators.

Synthesis and Magnetic, Optical, and Electrocatalytic Properties of High-Entropy Mixed-Metal Tungsten and Molybdenum Oxides.

High-entropy oxides (HEOs) are of interest for their unique physical and chemical properties. Significant lattice distortions, strain, and tolerance for high-vacancy concentrations set HEOs apart from single-metal or mixed-metal oxides. Herein, we synthesized and characterized the structures and compositions, along with the optical, magnetic, and electrocatalytic properties, of two families of high-entropy mixed-metal tungsten and molybdenum oxides, AWO4 and B2Mo3O8, where A and B are 3d transition metals. The HEOs A6WO4 (A = Mn, Fe, Co, Ni, Cu, and Zn) and B25Mo3O8 (B = Mn, Fe, Co, Ni, and Zn), as well as all accessible single-metal AWO4 and B2Mo3O8 parent compounds, were synthesized using high-temperature solid-state methods. X-ray photoelectron spectroscopy analysis of the surfaces revealed that the HEOs largely had the metal oxidation states expected from the bulk chemical formulas, but in some cases they were different than in the parent compounds. A6WO4 exhibited antiferromagnetic (AFM) ordering with a Néel temperature of 30 K, which is less than the average of its AFM parent compounds, and had a narrow band gap of 0.24 eV, which is much lower than all of its parent compounds. B25Mo3O8 was paramagnetic, despite the existence of AFM and ferromagnetic ordering in several of its parent compounds and had no observable band gap, which is analogous to its parent compounds. Both A6WO4 and B25Mo3O8 exhibited superior catalytic activity relative to the parent compounds for the oxygen evolution reaction, the oxidation half reaction of overall water splitting, under alkaline conditions, based on the overpotential required to reach the benchmark surface area normalized current density. Consistent with literature predictions of OER durability for ternary tungsten and molybdenum oxides, A6WO4 and B25Mo3O8 also exhibited stable performance without significant dissolution during 10 h stability experiments at a constant current.

Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications.

Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of emergent 2D systems. Here, we review recent advances in the theory, synthesis, characterization, device, and quantum physics of 2D materials and their heterostructures. First, we shed insight into modeling of defects and intercalants, focusing on their formation pathways and strategic functionalities. We also review machine learning for synthesis and sensing applications of 2D materials. In addition, we highlight important development in the synthesis, processing, and characterization of various 2D materials (e.g., MXnenes, magnetic compounds, epitaxial layers, low-symmetry crystals, etc.) and discuss oxidation and strain gradient engineering in 2D materials. Next, we discuss the optical and phonon properties of 2D materials controlled by material inhomogeneity and give examples of multidimensional imaging and biosensing equipped with machine learning analysis based on 2D platforms. We then provide updates on mix-dimensional heterostructures using 2D building blocks for next-generation logic/memory devices and the quantum anomalous Hall devices of high-quality magnetic topological insulators, followed by advances in small twist-angle homojunctions and their exciting quantum transport. Finally, we provide the perspectives and future work on several topics mentioned in this review.

THQ-Xanthene: An Emerging Strategy to Create Next-Generation NIR-I/II Fluorophores.

Near-infrared fluorescence imaging is vital for exploring the biological world. The short emissions (<650 nm) and small Stokes shifts (<30 nm) of current xanthene dyes obstruct their biological applications since a long time. Recently, a potent and universal THQ structural modification technique that shifts emission to the NIR-I/II range and enables a substantial Stokes shift (>100 nm) for THQ-modified xanthene dyes is established. Thus, a timely discussion of THQ-xanthene and its applications is extensive. Hence, the advent, working principles, development trajectory, and biological applications of THQ-xanthene dyes, especially in the fields of fluorescence probe-based sensing and imaging, cancer theranostics, and super-resolution imaging, are introduced. It is envisioned that the THQ modification tactic is a simple yet exceptional approach to upgrade the performance of conventional xanthene dyes. THQ-xanthene will advance the strides of xanthene-based potentials in early fluorescent diagnosis of diseases, cancer theranostics, and imaging-guided surgery.

Monitoring Hg2+ and MeHg+ poisoning in living body with an activatable near-infrared II fluorescence probe.

Noninvasively imaging mercury poisoning in living organisms is critical to understanding its toxicity and treatments. Especially, simultaneous fluorescence imaging of Hg2+ and MeHg+in vivo is helpful to disclose the mysteries of mercury poisoning. The key limitation for mercury imaging in vivo is the low imaging signal-to-background ratio (SBR) and limited imaging depth, which may result in unreliable detection results. Here, we designed and prepared a near-infrared II (NIR II) emissive probe, NIR-Rh-MS, leveraging the "spirolactam ring-open" tactic of xanthene dyes for in situ visualization of mercury toxicity in mice. The probe produces a marked fluorescence signal at 1015 nm and displays good linear responses to Hg2+ and MeHg+ with excellent sensitivity, respectively. The penetration experiments elucidate that the activated NIR-II fluorescence signal of the probe penetrates to a depth of up to 7 mm in simulated tissues. Impressively, the probe can monitor the toxicity of Hg2+ in mouse livers and the accumulation of MeHg+ in mouse brains via intravital NIR-II imaging for the first time. Thus, we believe that detecting Hg2+ and MeHg+ in different organs with a single NIR-II fluorescence probe in mice would assuredly advance the toxicologic study of mercury poisoning in vivo.

Band Gap Narrowing in a High-Entropy Spinel Oxide Semiconductor for Enhanced Oxygen Evolution Catalysis.

High-entropy oxides (HEOs), which contain five or more metal cations that are generally thought to be randomly mixed in a crystalline oxide lattice, can exhibit unique and enhanced properties, including improved catalytic performance, due to synergistic effects. Here, we show that band gap narrowing emerges in a high-entropy aluminate spinel oxide, (Fe0.2Co0.2Ni0.2Cu0.2Zn0.2)Al2O4 (A5Al2O4). The 0.9 eV band gap of A5Al2O4 is narrower than the band gaps of all parent spinel oxides. First-principles calculations for multicomponent AAl2O4 spinels indicate that the band gap narrowing arises from the broadening of the energy distribution of the 3d states due to variations in the electronegativities and crystal field splitting across the 3d transition-metal series. As a catalyst for the oxygen evolution reaction in an alkaline electrolyte, A5Al2O4 reaches a current density of 10 mA/cm2 at an overpotential of 400 mV, outperforming all of the single-metal end members at an applied potential of 1.7 V vs RHE. Catalyst deactivation occurs after 5 h at 10 mA/cm2 and is attributed, based on elemental analysis and grazing-incidence X-ray diffraction, to the formation of a passivating layer that blocks the high-entropy oxide surface. This result helps to validate that the HEO is the active catalyst. The observation of band gap narrowing in A5Al2O4 expands the scope of synergistic properties exhibited by high-entropy materials and offers insight into the question of how the electronic structure of multicomponent oxide materials can be engineered via a high-entropy approach to achieve enhanced catalytic properties.

Cysteine-Activatable Near-Infrared Fluorescent Probe for Dual-Channel Tracking Lipid Droplets and Mitochondria in Epilepsy.

Dual-channel fluorescent probes could respond to a specific target and emit different wavelengths of fluorescence before and after the response. Such probes could alleviate the influence caused by the variation of the probe concentration, excitation intensity, and so on. However, for most dual-channel fluorescent probes, the probe and fluorophore faced spectral overlap, which reduced sensitivity and accuracy. Herein, we introduced a cysteine (Cys)-responsive and near-infrared (NIR) emissive AIEgen (named TSQC) with good biocompatibility to dual-channel monitor Cys in mitochondria and lipid droplets (LDs) during cell apoptosis through wash-free fluorescence bio-imaging. TSQC can label mitochondria with bright fluorescence around 750 nm, and after reacting with Cys, the reaction product TSQ could spontaneously target LDs with emissions around 650 nm. Such spatially separated dual-channel fluorescence responses could significantly improve detection sensitivity and accuracy. Furthermore, the Cys-triggered dual-channel fluorescence imaging in LDs and mitochondria during apoptosis induced by UV light exposure, H2O2, or LPS treatment is clearly observed for the first time. Besides, we also report here that TSQC can be used to image subcellular Cys in different cell lines by measuring the fluorescence intensities of different emission channels. In particular, TSQC shows superior utility for the in vivo imaging of apoptosis in acute and chronic epilepsy mice. In brief, the newly designed NIR AIEgen TSQC can respond to Cys and separate two fluorescence signals to mitochondria and LDs, respectively, to study Cys-related apoptosis.

Evaluation of peroxynitrite fluxes in inflammatory mice with a ratiometric fluorescence probe.

Inflammation is a critical physiological process in the human body, which is closely related to numerous disorders and cancers. ONOO- is generated and functionalized in the inflamed process, but the roles of ONOO- are still blurred. To illuminate the roles of ONOO-, we fabricated an intramolecular charge transfer (ICT)-based fluorescence probe, HDM-Cl-PN, for the ratiometric determination of ONOO- in the inflamed mouse model. The probe displayed a gradual fluorescence increase at 676 nm and a fluorescence drop at 590 nm toward 0-10.5 µM ONOO-, and the ratio of 676 nm fluorescence and 590 nm fluorescence varied from 0.7 to 24.7. The significantly changed ratio and favorable selectivity ensure the sensitive detection of subtle changes in cellular ONOO-. Thanks to the excellent sensing performance, HDM-Cl-PNin vivo ratiometrically visualized ONOO- fluctuations in the LPS-triggered inflammatory process. Overall, this work not only expatiated the rational design for a ratiometric ONOO- probe but also built a bridge to investigate the connections between ONOO- and inflammation in living mice.

Layered Semiconductor Cr0.32Ga0.68Te2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate.

The valleytronic state found in group-VI transition-metal dichalcogenides such as MoS2 has attracted immense interest since its valley degree of freedom could be used as an information carrier. However, valleytronic applications require spontaneous valley polarization. Such an electronic state is predicted to be accessible in a new ferroic family of materials, i.e., ferrovalley materials, which features the coexistence of spontaneous spin and valley polarization. Although many atomic monolayer materials with hexagonal lattices have been predicted to be ferrovalley materials, no bulk ferrovalley material candidates have been reported or proposed. Here, we show that a new non-centrosymmetric van der Waals (vdW) semiconductor Cr0.32Ga0.68Te2.33, with intrinsic ferromagnetism, is a possible candidate for bulk ferrovalley material. This material exhibits several remarkable characteristics: (i) it forms a natural heterostructure between vdW gaps, a quasi-two-dimensional (2D) semiconducting Te layer with a honeycomb lattice stacked on the 2D ferromagnetic slab comprised of the (Cr, Ga)-Te layers, and (ii) the 2D Te honeycomb lattice yields a valley-like electronic structure near the Fermi level, which, in combination with inversion symmetry breaking, ferromagnetism, and strong spin-orbit coupling contributed by heavy Te element, creates a possible bulk spin-valley locked electronic state with valley polarization as suggested by our DFT calculations. Further, this material can also be easily exfoliated to 2D atomically thin layers. Therefore, this material offers a unique platform to explore the physics of valleytronic states with spontaneous spin and valley polarization in both bulk and 2D atomic crystals.