Surface single-molecule dynamics controlled by entropy at low temperatures.

Configuration transitions of individual molecules and atoms on surfaces are traditionally described using an Arrhenius equation with energy barrier and pre-exponential factor (attempt rate) parameters. Characteristic parameters can vary even for identical systems, and pre-exponential factors sometimes differ by orders of magnitude. Using low-temperature scanning tunnelling microscopy (STM) to measure an individual dibutyl sulfide molecule on Au(111), we show that the differences arise when the relative position of tip apex and molecule changes by a fraction of the molecule size. Altering the tip position on that scale modifies the transition's barrier and attempt rate in a highly correlated fashion, which results in a single-molecular enthalpy-entropy compensation. Conversely, appropriately positioning the STM tip allows selecting the operating point on the compensation line and modifying the transition rates. The results highlight the need to consider entropy in transition rates of single molecules, even at low temperatures.

Exchange bias and domain evolution at 10 nm scales.

For a fixed 2 µm×2 µm area of a Co/Pt-CoO perpendicular exchange bias system we image the ferromagnetic (FM) domains for various applied fields with 10-nm resolution by magnetic force microscopy (MFM). Using quantitative MFM we measure the local areal density of pinned uncompensated spins (pinUCS) in the antiferromagnetic (AFM) CoO layer and correlate the FM domain structure with the UCS density. Larger applied fields drive the receding domains to areas of proportionally higher pinUCS aligned antiparallel to FM moments. The data confirm that the evolution of the FM domains is determined by the pinUCS in the AFM layer, and also present examples of frustration in the system.

Remanence due to wall magnetization and counterintuitive magnetometry data in 200-nm films of Ni.

200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (i) the films have perpendicular domains capped by closure domains with magnetization canted at 51 degrees from the film normal, (ii) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (iii) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.