Overactivated transport in the localized phase of the superconductor-insulator transition.

Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on insulating NbxSi1-x close to the SIT, as well as corresponding numerical simulations of the electrical conductivity. At low temperatures, we show that electronic transport is activated and dominated by charging energies. The sample thickness variation results in a large spread of activation temperatures, fine-tuned via disorder. We show numerically and experimentally that this originates from the localization length varying exponentially with thickness. At the lowest temperatures, there is an increase in activation energy related to the temperature at which this overactivated regime is observed. This relation, observed in many 2D systems shows that conduction is dominated by single charges that have to overcome the gap when entering superconducting grains.

Dissipative phases across the superconductor-to-insulator transition.

Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions. In particular, in 2D, once superconductivity is destroyed by disorder, an insulating ground state is expected to emerge, as a result of a direct superconductor-to-insulator quantum phase transition. In such systems, no metallic state is theoretically expected to survive to the slightest disorder. Here we map out the phase diagram of amorphous NbSi thin films as functions of disorder and film thickness, with two metallic phases in between the superconducting and insulating ones. These two dissipative states, defined by a resistance which extrapolates to a finite value in the zero temperature limit, each bear a specific dependence on disorder. We argue that they originate from an inhomogeneous destruction of superconductivity, even if the system is morphologically homogeneous. Our results suggest that superconducting fluctuations can favor metallic states that would not otherwise exist.

Point-contact transport properties of strongly correlated electrons on liquid helium.

We present transport measurements of a nondegenerate two-dimensional electron system on the surface of liquid helium at a point constriction. The constriction is formed in a microchannel by a split gate beneath the helium surface. The electrostatic energy of the electron system, which depends in part on the electron density, determines the split-gate voltage threshold of current flow through the constriction. Steplike increases in conductance are observed as the confinement strength is reduced. As the Coulomb interaction between electrons is strong, we attribute this effect to the increase in the number of electrons that can pass simultaneously through the constriction. Close to the threshold, single-electron transport is observed.