Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics.

In this work we theoretically investigate quantum confined Stark effect of intersubband transitions in asymmetric Ge/SiGe quantum wells for intensity modulation in the mid-infrared. Our calculations show that extinction ratios up to 1 dB and modulation speeds of several tens of GHz could be obtained in 100 µm long waveguides.

DAC-less PAM-4 generation in the O-band using a silicon Mach-Zehnder modulator.

We demonstrate 20-Gb/s 4-level pulse amplitude modulation (PAM-4) signal generation using a silicon Mach-Zehnder modulator (MZM) in the O-band. The modulator is driven by two independent binary streams, and the PAM-4 signal is thus generated directly on the chip, avoiding the use of power-hungry digital-to-analog converters (DACs). With optimized amplitude levels of the binary signals applied to the two arms of the MZM, a pre-forward error correction (FEC) bit-error rate (BER) as low as 7.6 × 10-7 is obtained. In comparison with a commercially available LiNbO3 modulator, the penalty is only 2 dB at the KP4 FEC threshold of 2.2 × 10-4.

Ultra-wideband Ge-rich silicon germanium mid-infrared polarization rotator with mode hybridization flattening.

In this work we investigate the implementation of ultra-wideband polarization rotator in the mid-infrared spectral region. A new design method of the rotation section is proposed, yielding a polarization rotator with an extinction ratio of at least 15 dB in a wavelength range of 2 µm. For a spectral range wider than 3.8 µm, an extinction ratio of at least 10 dB is achieved for this design. The device is 1660 µm long and the associated insertion loss is below 1.2 dB on the full operational wavelength range. The influence of geometrical parameters with respect to the design method to obtain such a broadband behavior is discussed. Finally, to increase the tolerance to fabrication errors, a tapered rotator design is proposed. Such a device can support up to ± 100 nm fabrication errors and still guarantees remarkable broadband behavior. To the best of our knowledge, this is the first time an integrated polarization rotator is designed to operate for the wavelength range of 4 to 9 µm with a bandwidth exceeding 2 µm.

Graded SiGe waveguides with broadband low-loss propagation in the mid infrared.

Mid-infrared (mid-IR) silicon photonics is expected to lead key advances in different areas including spectroscopy, remote sensing, nonlinear optics or free-space communications, among others. Still, the inherent limitations of the silicon-on-insulator (SOI) technology, namely the early mid-IR absorption of silicon oxide and silicon at λ~3.6 µm and at λ ~8.5 µm respectively, remain the main stumbling blocks that prevent this platform to fully exploit the mid-IR spectrum (λ ~2-20 µm). Here, we propose using a compact Ge-rich graded-index Si1-xGex platform to overcome this constraint. A flat propagation loss characteristic as low as 2-3 dB/cm over a wavelength span from λ = 5.5 µm to 8.5 µm is demonstrated in Ge-rich Si1-xGex waveguides of only 6 µm thick. The comparison of three different waveguides design with different vertical index profiles demonstrates the benefit of reducing the fraction of the guided mode that overlaps with the Si substrate to obtain such flat low loss behavior. Such Ge-rich Si1-xGex platforms may open the route towards the implementation of mid-IR photonic integrated circuits with low-loss beyond the Si multi-phonon absorption band onset, hence truly exploiting the full Ge transparency window up to λ ~15 µm.

Ge-rich graded-index Si1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics.

This work explores the use of Ge-rich graded-index Si1-xGex rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband mid-IR wavelength range from λ = 3 µm to 8 µm. Additionally, the gradual vertical confinement pulls the optical mode upwards in the waveguide core, overlapping with the Ge-rich area where the nonlinear refractive index is larger. Moreover, the Ge-rich graded-index Si1-xGex waveguides allow efficient tailoring of the chromatic dispersion curves, achieving flat anomalous dispersion for the quasi-TM optical mode with D ≤ 14 ps/nm/km over a ~1.4 octave span while retaining an optimum third-order nonlinear parameter, γeff. These results confirm the potential of Ge-rich graded-index Si1-xGex waveguides as an attractive platform to develop mid-IR nonlinear approaches requiring broadband dispersion engineering.

High quality entanglement on a chip-based frequency comb.

We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400 pairs of entangled photons /s/MHz for 500 µW pump power, compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities (> 98%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems.

Simplified modeling and optimization of silicon modulators based on free-carrier plasma dispersion effect.

In this paper, a simplified model of silicon phase modulators is presented that enables favorable accuracy together with a substantial reduction in computational effort and without the requirement of semiconductor TCAD device simulation software. This permits fast optimization of the different parameters of a modulator. The model was successfully implemented in Phoenix Optodesigner optical software allowing the optimization of silicon phase shifters for different applications. Moreover, this model presents a great potential for the simulation of modulators based on PN interdigitated junctions, which normally require complex and time consuming 3D simulations. Simulation time was reduced by a factor of 6 for the lateral PN junction based modulator, and two orders of magnitude reduction was obtained for interdigitated PN junctions based modulators.

Low-Power consumption Franz-Keldysh effect plasmonic modulator.

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 dB extinction ratio for a 30 µm long modulator is demonstrated under 3 V bias voltage at an operation wavelength of 1647 nm. The estimated energy consumption is as low as 20 fJ/bit.

A 40 Gbit/s optical link on a 300-mm silicon platform.

We demonstrated 40 Gbit/s optical link by coupling a silicon (Si) optical modulator to a germanium (Ge) photo-detector from two separate photonic chips. The optical modulator was based on carrier depletion in a pn diode integrated in a 950-µm long Mach-Zehnder interferometer. The Ge photo-detector was a lateral pin diode butt coupled to a silicon waveguide. The overall loss, which is mainly due to coupling (3 grating couplers times ~4 dB) was estimated to be lower than 18 dB. That also included modulator loss (4.9-dB) and propagation loss (<1 dB/cm). Both optoelectronic devices have been fabricated on a 300-mm CMOS platform to address high volume production markets.

Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers.

We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.

Highly tolerant tunable waveguide polarization rotator scheme.

Integrated polarization rotators are known to exhibit stringent fabrication tolerances, which severely handicap their practical application. Here we present a general polarization rotator scheme that enables both the compensation of fabrication errors and wavelength tunability. The scheme is described analytically, and a condition for perfect polarization conversion is established. Simulations of a silicon-on-insulator polarization rotator show polarization extinction ratios in excess of 40 dB even in the presence of large fabrication errors that in a conventional rotator configuration degrade the extinction ratio to below 5 dB. Additionally, wavelength tuning over ±30 nm is shown.

Analytical model for depletion-based silicon modulator simulation.

An original method to simulate depletion-based silicon modulators based on an analytical description of the active region is presented. This method is fast and efficient in particular for performance optimization. It is applied for a lateral diode integrated in a rib waveguide, and a comparison is performed with classical 2D numerical simulation. A very good agreement is obtained, showing the accuracy and efficiency of this analytical method.

High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode.

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Enhancement of semiconducting single-wall carbon-nanotube photoluminescence.

Photoluminescence properties of semiconducting single-wall carbon-nanotube (s-SWNT) thin films with different metallic single-wall carbon-nanotube (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer-assisted selective extraction. We show that the presence of a few m-SWNTs in the sample generates a drastic quenching of the emission. Therefore, the highly purified s-SWNT film is a strongly luminescent material and a good candidate for future applications in photonics, such as near-IR emitters, modulators, and detectors.