RESUMO
Strong pinning depends on the pinning force strength and number density of effective defects. Using the hydrostatic pressure method, we demonstrate here that hydrostatic pressure of 1.2 GPa can significantly enhance flux pinning or the critical current density (Jc) of optimally doped Ba0.6K0.4Fe2As2 crystals by a factor of up to 5 in both low and high fields, which is generally rare with other Jc enhancement techniques. At 4.1 K, high pressure can significantly enhance Jc from 5 × 10(5 )A/cm(2) to nearly 10(6 )A/cm(2) at 2 T, and from 2 × 10(5 )A/cm(2) to nearly 5.5 × 10(5 )A/cm(2) at 12 T. Our systematic analysis of the flux pinning mechanism indicates that both the pinning centre number density and the pinning force are greatly increased by the pressure and enhance the pinning. This study also shows that superconducting performance in terms of flux pinning or Jc for optimally doped superconducting materials can be further improved by using pressure.
RESUMO
Magnetic transport properties in Ti(1-x)Co(x)O(2) and Zn(1-x)Co(x)O magnetic semiconductors have been studied experimentally and theoretically. A linear relation of lnρ versus T(-1/2) (ρ is sheet resistance and T is temperature), which shows different slopes and intersections at different magnetic fields, was observed experimentally in the low temperature range. The spin-dependent variable range hopping model has been proposed by taking into account the electron-electron Coulomb interaction and the spin-spin exchange interaction in the same frame, which can well describe the observed magnetic transport properties in Ti(1-x)Co(x)O(2) and Zn(1-x)Co(x)O magnetic semiconductors.