High-Performance Self-Powered UV Detector Based on SnO2-TiO2 Nanomace Arrays.

Photoelectrochemical cell-typed self-powered UV detectors have attracted intensive research interest due to their low cost, simple fabrication process, and fast response. In this paper, SnO2-TiO2 nanomace arrays composed of SnO2 nanotube trunk and TiO2 nanobranches were prepared using soft chemical methods, and an environment-friendly self-powered UV photodetector using this nanostructure as the photoanode was assembled. Due to the synergistic effect of greatly accelerated electron-hole separation, enhanced surface area, and reduced charge recombination provided by SnO2-TiO2 nanomace array, the nanostructured detector displays an excellent performance over that based on bare SnO2 arrays. The impact of the growing time of TiO2 branches on the performance of UV photodetector was systematically studied. The device based on optimized SnO2-TiO2 nanomace arrays exhibits a high responsivity of 0.145 A/W at 365 nm, a fast rising time of 0.037 s, and a decay time of 0.015 s, as well as excellent spectral selectivity. This self-powered photodetector is a promising candidate for high-sensitivity, high-speed UV-detecting application.

Reversible control of the magnetization of spinel ferrites based electrodes by lithium-ion migration.

Lithium-ion (Li-ion) batteries based on spinel transition-metal oxide electrodes have exhibited excellent electrochemical performance. The reversible intercalation/deintercalation of Li-ions in spinel materials enables not only energy storage but also nondestructive control of the electrodes' physical properties. This feature will benefit the fabrication of novel Li-ion controlled electronic devices. In this work, reversible control of ferromagnetism was realized by the guided motion of Li-ions in MnFe2O4 and γ-Fe2O3 utilizing miniature lithium-battery devices. The in-situ characterization of magnetization during the Li-ion intercalation/deintercalation process was conducted, and a reversible variation of saturation magnetization over 10% was observed in both these materials. The experimental conditions and material parameters for the control of the ferromagnetism are investigated, and the mechanism related to the magnetic ions' migration and the exchange coupling evolution during this process was proposed. The different valence states of tetrahedral metal ions were suggested to be responsible for the different performance of these two spinel materials.

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm.

Photodetectors with excellent detecting properties over a broad spectral range have advantages for the application in many optoelectronic devices. Introducing imperfections to the atomic lattices in semiconductors is a significant way for tuning the bandgap and achieving broadband response, but the imperfection may renovate their intrinsic properties far from the desire. Here, by controlling the deviation from the perfection of the atomic lattice, ultrabroadband multilayer MoS2 photodetectors are originally designed and realized with the detection range over 2000 nm from 445 nm (blue) to 2717 nm (mid-infrared). Associated with the narrow but nonzero bandgap and large photoresponsivity, the optimized deviation from the perfection of MoS2 samples is theoretically found and experimentally achieved aiming at the ultrabroadband photoresponse. By the photodetection characterization, the responsivity and detectivity of the present photodetectors are investigated in the wavelength range from 445 to 2717 nm with the maximum values of 50.7 mA W-1 and 1.55 × 109 Jones, respectively, which represent the most broadband MoS2 photodetectors. Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future.

Broadband atomic-layer MoS2 optical modulators for ultrafast pulse generations in the visible range.

Visible lasers are a fascinating regime, and their significance is illustrated by the 2014 Noble prizes in physics and chemistry. With the development of blue laser diodes (LDs), the LD-pumped solid-state visible lasers become a burgeoning direction today. Constrained by the scarce visible optical modulators, the solid-state ultrafast visible lasers are rarely realized. Based on the bandgap structure and optoelectronic properties of atomic-layer MoS2, it can be proposed that MoS2 has the potential as a visible optical modulator. Here, by originally revealing layer-dependent nonlinear absorption of the atomic-layer MoS2 in the visible range, broadband atomic-layer MoS2 optical modulators for the visible ultrafast pulse generation are developed and selected based on the proposed design criteria for novel two-dimensional (2D) optical modulators. By applying the selected MoS2 optical modulators in the solid-state praseodymium lasers, broadband mode-locked ultrafast lasers from 522 to 639 nm are originally realized. We believe that this Letter should promote the development of visible ultrafast photonics and further applications of 2D optoelectronic materials.

High-Performance Self-powered Photodetectors Based on ZnO/ZnS Core-Shell Nanorod Arrays.

In recent years, there is an urgent demand for high-performance ultraviolet photodetectors with high photosensitivity, fast responsivity, and excellent spectral selectivity. In this letter, we report a self-powered photoelectrochemical cell-type UV detector using the ZnO/ZnS core-shell nanorod array as the active photoanode and deionized water as the electrolyte. This photodetector demonstrates an excellent spectral selectivity and a rapid photoresponse time of about 0.04 s. And the maximum responsivity is more than 0.056 (A/W) at 340 nm, which shows an improvement of 180 % compared to detectors based on the bare ZnO nanorods. This improved photoresponsivity can be understood from the step-like band energy alignment of the ZnO/ZnS interface, which will accelerate the separation of photoexcited electron-hole pairs and improve the efficiency of the photodetector. Considering its uncomplicated low-cost fabrication process, and environment-friendly feature, this self-powered device is a promising candidate for UV detector application.

Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

Atomic-layer molybdenum sulfide optical modulator for visible coherent light.

Coherent light sources in the visible range are playing important roles in our daily life and modern technology, since about 50% of the capability of the our human brains is devoted to processing visual information. Visible lasers can be achieved by nonlinear optical process of infrared lasers and direct lasing of gain materials, and the latter has advantages in the aspects of compactness, efficiency, simplicity, etc. However, due to lack of visible optical modulators, the directly generated visible lasers with only a gain material are constrained in continuous-wave operation. Here, we demonstrated the fabrication of a visible optical modulator and pulsed visible lasers based on atomic-layer molybdenum sulfide (MoS2), a ultrathin two-dimensional material with about 9-10 layers. By employing the nonlinear absorption of the modulator, the pulsed orange, red and deep red lasers were directly generated. Besides, the present atomic-layer MoS2 optical modulator has broadband modulating properties and advantages in the simple preparation process. The present results experimentally verify the theoretical prediction for the low-dimensional optoelectronic modulating devices in the visible wavelength region and may open an attractive avenue for removing a stumbling block for the further development of pulsed visible lasers.

Passively Q-switched nanosecond erbium-doped fiber laser with MoS(2) saturable absorber.

Passively Q-switched nanosecond pulsed erbium-doped fiber laser based on MoS(2) saturable absorber (SA) is experimentally demonstrated. The high quality MoS(2) SA deposited on the broadband high-reflectivity mirror with a large modulation depth of 9% was prepared by pulsed laser deposition method. By inserting the MoS(2) SA into an erbium-doped fiber laser, stable Q-switched operation can be achieved with the shortest pulse width of 660 ns, the maximum pulse energy up to 152 nJ and pulse repetition rates varying from 116 to 131 kHz. The experimental results further verify that MoS(2) possesses the potential advantage for stable Q-switched pulse generation at 1.5 µm.

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.

Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO-ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal-insulator transition of the CoO(1-v) layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

A high performance quasi-solid-state self-powered UV photodetector based on TiO2 nanorod arrays.

Self-powered UV photodetectors based on TiO2 and ZnO nanorod arrays have attracted lots of attention in recent years due to their various advantages. Impressive performances were observed in photochemical cell based UV detectors. However, liquid electrolytes are not ideal for long-term operation and are inconvenient for practical applications. Hence there is an urgent demand for replacing liquid electrolytes with solid-state hole transfer materials. Herein we report a nanostructured quasi-solid-state UV photodetector fabricated using a liquid crystal (LC)-embedded electrolyte with a light-trapping scheme. Vertical rutile TiO2 nanorod arrays grown on fluorine-doped tin oxide conductive glass were used as the active photoanode. A high incident photon-to-current conversion efficiency of 29% at 383 nm and a quick response time of less than 0.03 s were observed. In addition, it was revealed that the quasi-solid-state UV photodetector showed visible-blind, high responsivity, fast time response and good photosensitivity linearity in a wide light intensity range. The LC-embedded electrolyte with a light-trapping scheme enhanced the light absorption and thus improved the photodetecting performance. This self-powered device is a promising candidate for application in high-sensitivity and high-speed UV light photodetectors.

Broadband few-layer MoS2 saturable absorbers.

The bandgaps of monolayer and bulk molybdenum sulfide (MoS2 ) result in that they are far from suitable for application as a saturable absorption device. In this paper, the operation of a broadband MoS2 saturable absorber is demonstrated by the introduction of suitable defects. It is believed that the results provide some inspiration in the investigation of two-dimensional optoelectronic materials.

ZnO nanosheet arrays constructed on weaved titanium wire for CdS-sensitized solar cells.

Ordered ZnO nanosheet arrays were grown on weaved titanium wires by a low-temperature hydrothermal method. CdS nanoparticles were deposited onto the ZnO nanosheet arrays using the successive ionic layer adsorption and reaction method to make a photoanode. Nanoparticle-sensitized solar cells were assembled using these CdS/ZnO nanostructured photoanodes, and their photovoltaic performance was studied systematically. The best light-to-electricity conversion efficiency was obtained to be 2.17% under 100 mW/cm2 illumination, and a remarkable short-circuit photocurrent density of approximately 20.1 mA/cm2 was recorded, which could attribute to the relatively direct pathways for transportation of electrons provided by ZnO nanosheet arrays as well as the direct contact between ZnO and weaved titanium wires. These results indicate that CdS/ZnO nanostructures on weaved titanium wires would open a novel possibility for applications of low-cost solar cells.

CdS quantum dot-sensitized solar cells based on nano-branched TiO2 arrays.

Nano-branched rutile TiO2 nanorod arrays were grown on F:SnO2 conductive glass (FTO) by a facile, two-step wet chemical synthesis process at low temperature. The length of the nanobranches was tailored by controlling the growth time, after which CdS quantum dots were deposited on the nano-branched TiO2 arrays using the successive ionic layer adsorption and reaction method to make a photoanode for quantum dot-sensitized solar cells (QDSCs). The photovoltaic properties of the CdS-sensitized nano-branched TiO2 solar cells were studied systematically. A short-circuit current intensity of approximately 7 mA/cm2 and a light-to-electricity conversion efficiency of 0.95% were recorded for cells based on optimized nano-branched TiO2 arrays, indicating an increase of 138% compared to those based on unbranched TiO2 nanorod arrays. The improved performance is attributed to a markedly enlarged surface area provided by the nanobranches and better electron conductivity in the one-dimensional, well-aligned TiO2 nanorod trunks.

High-performance self-powered UV photodetectors based on TiO2 nano-branched arrays.

Nano-branched TiO2 arrays were fabricated on fluorine-doped tin oxide (FTO) glass by a facile two-step chemical synthesis process. Self-powered UV photodetectors based on photoelectrochemical cells (PECs) were assembled using these TiO2 nano-branched arrays as photoanodes. These visible-blind self-powered UV photodetectors exhibit high sensitivity and high-speed photoresponse. Compared with photodetectors based on bare TiO2 nanorod arrays, TiO2 nano-branched arrays show drastically improved photodetecting performance as photoanodes. The photosensitivity increases from 0.03 to 0.22 A W(-1) when optimized nano-branched TiO2 arrays are used, corresponding to an incident photon-to-current conversion efficiency higher than 77%. The UV photodetectors also exhibit excellent spectral selectivity and fast response (0.05 s decay time). The improved performance is attributed to a markedly enlarged TiO2/electrolyte contact area and good electron conductivity in the one-dimensional, well-aligned TiO2 nanorod trunk.

Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.

The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good insulating layer for tunneling magnetoresistance but also easily switches between high and low resistance states under electrical field. Here we firstly propose to use nanon composite barrier layers of CoO-ZnO to fabricate the spin memristive Co/CoO-ZnO/Co magnetic tunnel junctions. The bipolar resistance switching ratio is high up to 90, and the TMR ratio of the high resistance state gets to 8% at room temperature, which leads to three resistance states. The bipolar resistance switching is explained by the metal-insulator transition of CoO(1-v) layer due to the migration of oxygen ions between CoO(1-v) and ZnO(1-v).

ZnO nanoneedle/H2O solid-liquid heterojunction-based self-powered ultraviolet detector.

ZnO nanoneedle arrays were grown vertically on a fluorine-doped tin oxide-coated glass by hydrothermal method at a relatively low temperature. A self-powered photoelectrochemical cell-type UV detector was fabricated using the ZnO nanoneedles as the active photoanode and H2O as the electrolyte. This solid-liquid heterojunction offers an enlarged ZnO/water contact area and a direct pathway for electron transport simultaneously. By connecting this UV photodetector to an ammeter, the intensity of UV light can be quantified using the output short-circuit photocurrent without a power source. High photosensitivity, excellent spectral selectivity, and fast photoresponse at zero bias are observed in this UV detector. The self-powered behavior can be well explained by the formation of a space charge layer near the interface of the solid-liquid heterojunction, which results in a built-in potential and makes the solid-liquid heterojunction work in photovoltaic mode.

A self-powered UV photodetector based on TiO2 nanorod arrays.

Large-area vertical rutile TiO2 nanorod arrays (TNAs) were grown on F/SnO2 conductive glass using a hydrothermal method at low temperature. A self-powered ultraviolet (UV) photodetector based on TiO2 nanorod/water solid-liquid heterojunction is designed and fabricated. These nanorods offer an enlarged TiO2/water contact area and a direct pathway for electron transport simultaneously. By connecting this UV photodetector to an ammeter, the intensity of UV light can be quantified using the output short-circuit photocurrent without a power source. A photosensitivity of 0.025 A/W and a quick response time were observed. At the same time, a high photosensitivity in a wide range of wavelength was also demonstrated. This TNA/water UV detector can be a particularly suitable candidate for practical applications for its high photosensitivity, fast response, excellent spectral selectivity, uncomplicated low-cost fabrication process, and environment-friendly feature.

Efficient PbS/CdS co-sensitized solar cells based on TiO2 nanorod arrays.

Narrow bandgap PbS nanoparticles, which may expand the light absorption range to the near-infrared region, were deposited on TiO2 nanorod arrays by successive ionic layer adsorption and reaction method to make a photoanode for quantum dot-sensitized solar cells (QDSCs). The thicknesses of PbS nanoparticles were optimized to enhance the photovoltaic performance of PbS QDSCs. A uniform CdS layer was directly coated on previously grown PbS-TiO2 photoanode to protect the PbS from the chemical attack of polysulfide electrolytes. A remarkable short-circuit photocurrent density (approximately 10.4 mA/cm2) for PbS/CdS co-sensitized solar cell was recorded while the photocurrent density of only PbS-sensitized solar cells was lower than 3 mA/cm2. The power conversion efficiency of the PbS/CdS co-sensitized solar cell reached 1.3%, which was beyond the arithmetic addition of the efficiencies of single constituents (PbS and CdS). These results indicate that the synergistic combination of PbS with CdS may provide a stable and effective sensitizer for practical solar cell applications.

Room temperature ferromagnetism in epitaxial In2O3 films with embedded nano-sized Fe3O4 columns.

Epitaxial In2O3 films with embedded Fe3O4 oriented nanocolumns were deposited by pulsed laser deposition (PLD) on Y-stabilized ZrO2 (111) substrates. The resulting films show ferromagnetism at room temperature with strong magnetic anisotropy, which can be attributed to the presence of Fe3O4 nanocolumns. Magnetotransport measurements demonstrate a transition from negative magnetoresistance to positive magnetoresistance as the measuring temperature increases. Quantitative coincidence between the anomalous Hall resistivity as a function of the magnetic field and the magnetic hysteresis loop is observed at room temperature, indicating the spin polarization nature of carriers.