RESUMO
The determination of molecular conformations of oligomeric acceptors (OAs) and their impact on molecular packing are crucial for understanding the photovoltaic performance of their resulting polymer solar cells (PSCs) but have not been well studied yet. Herein, we synthesized two dimeric acceptor materials, DIBP3F-Se and DIBP3F-S, which bridged two segments of Y6-derivatives by selenophene and thiophene, respectively. Theoretical simulation and experimental 1D and 2D NMR spectroscopic studies prove that both dimers exhibit O-shaped conformations other than S- or U-shaped counter-ones. Notably, this O-shaped conformation is likely governed by a distinctive "conformational lock" mechanism, arising from the intensified intramolecular π-π interactions among their two terminal groups within the dimers. PSCs based on DIBP3F-Se deliver a maximum efficiency of 18.09 %, outperforming DIBP3F-S-based cells (16.11 %) and ranking among the highest efficiencies for OA-based PSCs. This work demonstrates a facile method to obtain OA conformations and highlights the potential of dimeric acceptors for high-performance PSCs.
RESUMO
One-dimensional tellurium nanostructures can exhibit distinct electronic properties from those seen in bulk Te. The electronic properties of nanostructured Te are highly dependent on their morphology, and thus controlled synthesis processes are required. Here, highly crystalline tellurium nanowires were produced via physical vapour deposition. We used growth temperature, heating rate, flow of the carrier gas, and growth time to control the degree of supersaturation in the region where Te nanostructures are grown. The latter leads to a control in the nucleation and morphology of Te nanostructures. We observed that Te nanowires grow via the vapour-solid mechanism where a Te particle acts as a seed. Transmission electron microscopy (TEM) and electron diffraction studies revealed that Te nanowires have a trigonal crystal structure and grow along the (0001) direction. Their diameter can be tuned from 26 to 200 nm with lengths from 8.5 to 22 µm, where the highest aspect ratio of 327 was obtained for wires measuring 26 nm in diameter and 8.5 µm in length. We investigated the use of bismuth as an additive to reduce the formation of tellurium oxides, and we discuss the effect of other growth parameters.
RESUMO
Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and were found to depend on the GaN deposition time. Furthermore, the evolution of the contact angle of a droplet of water located on the surface of these GaN epitaxial layers with the deposition time was investigated. We observe a transition from the hydrophilic regime to the hydrophobic regime for deposition times longer than 15 min. The observed dependence of GaN hydrophobicity on its degree of porosity is discussed and explained in the framework of the Cassie-Baxter model.
RESUMO
In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 µm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.
