Understanding and Controlling Electrostatic Discharge in Triboelectric Nanogenerators.

Triboelectric nanogenerators (TENGs) have been widely used to harness various forms of mechanical energy for conversion to electrical energy. However, the contentious challenge in characterising TENGs is the lack of standard protocols for assessing mechanical-to-electrical energy conversion processes. Herein, macroscopic signal analysis is used to identify three key charging events within triboelectric signals: charge induction (CI), contact electrification (CE), and electrostatic discharge (ESD). By considering two phases of motion during contact-separation (approach and departure of the contact materials), CI arising from the motion of bound surface charge (varying electric field) between opposing contact materials is shown to dominate the measured displacement current signal, rather than the process of CE itself. Furthermore, the conventional signal (i. e., voltage, current, charge) interpretation of CE and CI during approach and departure phases is re-assessed, to indicate that the sudden spike of current often observed immediately prior to contact (or after separation) arises from polarity inverting electrostatic discharge (ESD). This aspect of the measured triboelectric effect, which is often ignored, is crucial for the design of TENGs and hence, techniques to enhance the understanding and control over the stochastic occurrence of ESDs is explored. The methods proposed for the deconvolution of the macroscopic signal components of TENGs, and mitigation of ESD occurrences, will allow for precise quantification of the associated charging events. The applications of this study will template the design and development of future super-TENGs with optimised energy conversion capabilities.

Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials.

The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe4), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe4 has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW-1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼109 cm Hz1/2 W-1 at λ = 1.4 µm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe4, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe4 for room temperature IR optoelectronic applications.