Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise.

Germanium-on-Silicon (Ge-on-Si) avalanche photodiodes (APDs) are of considerable interest as low intensity light detectors for emerging applications. The Ge absorption layer detects light at wavelengths up to ≈ 1600 nm with the Si acting as an avalanche medium, providing high gain with low excess avalanche noise. Such APDs are typically used in waveguide configurations as growing a sufficiently thick Ge absorbing layer is challenging. Here, we report on a new vertically illuminated pseudo-planar Ge-on-Si APD design utilizing a 2 µm thick Ge absorber and a 1.4 µm thick Si multiplication region. At a wavelength of 1550 nm, 50 µm diameter devices show a responsivity of 0.41 A/W at unity gain, a maximum avalanche gain of 101 and an excess noise factor of 3.1 at a gain of 20. This excess noise factor represents a record low noise for all configurations of Ge-on-Si APDs. These APDs can be inexpensively manufactured and have potential integration in silicon photonic platforms allowing use in a variety of applications requiring high-sensitivity detectors at wavelengths around 1550 nm.

High sensitivity Ge-on-Si single-photon avalanche diode detectors.

The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7×10-17WHz-12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134±10ps are demonstrated.

Characterization of integrated waveguides by atomic-force-microscopy-assisted mid-infrared imaging and spectroscopy.

A novel spectroscopy technique to enable the rapid characterization of discrete mid-infrared integrated photonic waveguides is demonstrated. The technique utilizes lithography patterned polymer blocks that absorb light strongly within the molecular fingerprint region. These act as integrated waveguide detectors when combined with an atomic force microscope that measures the photothermal expansion when infrared light is guided to the block. As a proof of concept, the technique is used to experimentally characterize propagation loss and grating coupler response of Ge-on-Si waveguides at wavelengths from 6 to 10 µm. In addition, when the microscope is operated in scanning mode at fixed wavelength, the guided mode exiting the output facet is imaged with a lateral resolution better than 500 nm i.e. below the diffraction limit. The characterization technique can be applied to any mid-infrared waveguide platform and can provide non-destructive in-situ testing of discrete waveguide components.

Ge-on-Si waveguides for sensing in the molecular fingerprint regime.

Low loss, single mode, Ge-on-Si rib waveguides are used to demonstrated optical sensing in the molecular fingerprint region of the mid-infrared spectrum. Sensing is carried out using two spin-coated films, with strong absorption in the mid-infrared. These films are used to calibrate the modal overlap with an analyte, and therefore experimentally demonstrate the potential for Ge-on-Si waveguides for mid-infrared sensing applications. The results are compared to Fourier transform infrared spectroscopy measurements. The advantage of waveguide spectroscopy is demonstrated in terms of the increased optical interaction, and a new multi-path length approach is demonstrated to improve the dynamic range, which is not possible with conventional FTIR or attenuated total reflection (ATR) measurements. These results highlight the potential for Ge-on-Si as an integrated sensing platform for healthcare, pollution monitoring and defence applications.

3D LIDAR imaging using Ge-on-Si single-photon avalanche diode detectors.

We present a scanning light detection and ranging (LIDAR) system incorporating an individual Ge-on-Si single-photon avalanche diode (SPAD) detector for depth and intensity imaging in the short-wavelength infrared region. The time-correlated single-photon counting technique was used to determine the return photon time-of-flight for target depth information. In laboratory demonstrations, depth and intensity reconstructions were made of targets at short range, using advanced image processing algorithms tailored for the analysis of single-photon time-of-flight data. These laboratory measurements were used to predict the performance of the single-photon LIDAR system at longer ranges, providing estimations that sub-milliwatt average power levels would be required for kilometer range depth measurements.

1.4 million Q factor Si3N4 micro-ring resonator at 780 nm wavelength for chip-scale atomic systems.

A silicon nitride micro-ring resonator with a loaded Q factor of 1.4 × 106 at 780 nm wavelength is demonstrated on silicon substrates. This is due to the low propagation loss waveguides achieved by optimization of waveguide sidewall interactions and top cladding refractive index. Potential applications include laser frequency stabilization allowing for chip-scale atomic systems targeting the 87Rb atomic transition at 780.24 nm. The temperature dependent wavelength shift of the micro-ring was determined to be 13.1 pm/K indicating that a minimum temperature stability of less than ±15 mK is required for such devices for wavelength locking applications. If a polyurethane acrylate top cladding of an optimized thickness is used then the micro-ring could effectively be athermal, resulting in reduced footprint, power consumption, and cost of potential devices.

High performance planar germanium-on-silicon single-photon avalanche diode detectors.

Single-photon detection has emerged as a method of choice for ultra-sensitive measurements of picosecond optical transients. In the short-wave infrared, semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. This planar geometry has enabled a significant step-change in performance, demonstrating single-photon detection efficiency of 38% at 125 K at a wavelength of 1310 nm, and a fifty-fold improvement in noise equivalent power compared with optimised mesa geometry SPADs. In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing effects. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications.

Atom-efficient electrophilic aromatic nitration by dinitrogen pentoxide catalysed by zirconium(IV) 2,4-pentanedionate.

An atom-efficient, non-acidic, catalytic process is described for the nitration of electron deficient arenes such as o-nitrotoluene using a dinitrogen pentoxide-zirconium(iv) 2,4-pentanedionate system in dichloromethane solvent. Kinetic studies showed the nitration process to be first-order with respect to the aromatic substrate and higher than first-order with respect to the catalyst. Addition of the catalyst at ca. 0.1-1 mol% compared with both N(2)O(5) and the organic substrate results in an increase in the first-order rate constant for nitration by a factor of approximately 5000 with a turnover number of at least 500. The orientation of the nitration products (2,4-/2,6-dinitrotoluenes) is consistent with attack of nitronium ion. The apparently high order of reaction with respect to the catalyst suggests a possible heterogeneous process.