RESUMO
We demonstrate an all-optical switch based on a waveguide-embedded 1D photonic crystal cavity fabricated in silicon-on-insulator technology. Light at the telecom wavelength is modulated at high-speed by control pulses in the near infrared, harnessing the plasma dispersion effect. The actual absorbed switching power required for a 3 dB modulation depth is measured to be as low as 6 fJ. While the switch-on time is on the order of a few picoseconds, the relaxation time is almost 500 ps and limited by the lifetime of the charge carriers.
RESUMO
A planar nanophotonic Fabry-Perot-like resonator that can defy strong absorption of about 20 000 cm(-1) in the cavity material is demonstrated. Visible laser emission is observed from two silicon subwavelength-sized high index contrast gratings with embedded polymer gain material. The size of the laser is reduced by an order of magnitude compared to established designs based on photonic bandgap structures. As silicon constitutes the most common carrier for electronics, the cost-efficient integration of compact laser sources for visible wavelengths comes within reach.