RESUMO
In this work, the interface composition of the superconducting Ti/PdAu bilayer is tuned by an annealing process in N2 from 100 to 500 °C to control the superconducting transition temperature (Tc). This Ti-PdAu composition layer is characterized with a high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) to show the infiltration process. The surface topography, electrical, and cryogenic properties are also shown. The inter-infiltration of Ti and PdAu induced by the thermal treatments generates an intermixed layer at the interface of the bilayer film. Due to the enforced proximity effect by the annealing process, the Tc of Ti (55 nm)/PdAu (60 nm) bilayer thin films is tuned from an initial value of 243 to 111 mK which is a temperature that is suitable for the application as the function unit of a superconducting transition edge sensor.
RESUMO
The discovery of iron-based superconductors paved the way for advanced possible applications, mostly in high magnetic fields, but also in electronics. Among superconductive devices, nanowire detectors have raised a large interest in recent years, due to their ability to detect a single photon in the visible and infrared (IR) spectral region. Although not yet optimal for single-photon detection, iron-based superconducting nanowire detectors would bring clear advantages due to their high operating temperature, also possibly profiting of other peculiar material properties. However, there are several challenges yet to be overcome, regarding mainly: fabrication of ultra-thin films, appropriate passivation techniques, optimization of nano-patterning, and high-quality electrical contacts. Test nanowire structures, made by ultra-thin films of Co-doped BaFe2As2, have been fabricated and characterized in their transport and intrinsic noise properties. The results on the realized nanostructures show good properties in terms of material resistivity and critical current. Details on the fabrication and low temperature characterization of the realized nanodevices are presented, together with a study of possible degradation phenomena induced by ageing effects.
RESUMO
Transition-edge sensors (TESs) are single photon detectors attractive for applications in quantum optics and quantum information experiments owing to their photon number resolving capability. Nowadays, high-energy resolution TESs for telecommunication are based on either W or Au/Ti films, demonstrating slow recovery time constants. We report our progress on the development of an Al/Ti TES. Since bulk aluminum has a critical temperature (Tc) of ca. 1.2 K and a sufficiently low specific heat (less than 10(-4) J/cm³K²), it can be employed to produce the sensitive material for optical TESs. Furthermore, exploiting its high Tc, Al-based TESs can be trimmed in a wider temperature range with respect to Ti or W. A first Al/Ti TES with a Tc ≈ 142 mK, investigated from a thermal and optical point of view, has shown a response time constant of about 2 µs and single photon discrimination with 0.34 eV energy resolution at telecom wavelength, demonstrating that Al/Ti films are suitable to produce TESs for visible and NIR photon counting.
