Current-limiting amplifier for high speed measurement of resistive switching data.

Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to the control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cells are directly patterned on MOS transistors to limit the current, but this approach is very restrictive as the necessary integration limits the materials available as well as the fabrication cycle time. In this article, we propose an external circuit to cycle resistive memory cells, capturing the full transfer curves while driving the cells in a way that suppresses runaway transitions. Using this circuit, we demonstrate the acquisition of 105 I, V loops per second without using on-wafer current limiting transistors. This setup brings voltage sweeping measurements to a relevant timescale for applications and enables many new experimental possibilities for device evaluation in a statistical context.

Quantifying spin Hall angles from spin pumping: experiments and theory.

Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating Ni{80}Fe{20}|normal metal (N) bilayers into a coplanar waveguide. A dc spin current in N can be generated by spin pumping in a controllable way by ferromagnetic resonance. The transverse dc voltage detected along the Ni{80}Fe{20}|N has contributions from both the anisotropic magnetoresistance and the spin Hall effect, which can be distinguished by their symmetries. We developed a theory that accounts for both. In this way, we determine the spin Hall angle quantitatively for Pt, Au, and Mo. This approach can readily be adapted to any conducting material with even very small spin Hall angles.

Magnetization dynamics due to pure spin currents in magnetic double layers.

The magnetization dynamics in magnetic double layers is affected by spin-pump and spin-sink effects. So far, only the spin pumping and its effect on the magnetic damping has been studied. However, due to conservation of angular momentum this spin current also leads to magnetic excitation of the layer dissipating this angular momentum. In this Letter we use time resolved magneto-optic Kerr effect to directly show the excitation due to the pure spin current. In particular, we observe magnetization dynamics due to transfer of angular momentum in magnetic double layers. In contrast to other experiments where a spin polarized charge current is passed through a nanomagnet, the effects discussed in this Letter are based on pure spin currents without net transfer of electric charge.