A Tri-Channel Oxide Transistor Concept for the Rapid Detection of Biomolecules Including the SARS-CoV-2 Spike Protein.

Solid-state transistor sensors that can detect biomolecules in real time are highly attractive for emerging bioanalytical applications. However, combining upscalable manufacturing with the required performance remains challenging. Here, an alternative biosensor transistor concept is developed, which relies on a solution-processed In2 O3 /ZnO semiconducting heterojunction featuring a geometrically engineered tri-channel architecture for the rapid, real-time detection of important biomolecules. The sensor combines a high electron mobility channel, attributed to the electronic properties of the In2 O3 /ZnO heterointerface, in close proximity to a sensing surface featuring tethered analyte receptors. The unusual tri-channel design enables strong coupling between the buried electron channel and electrostatic perturbations occurring during receptor-analyte interactions allowing for robust, real-time detection of biomolecules down to attomolar (am) concentrations. The experimental findings are corroborated by extensive device simulations, highlighting the unique advantages of the heterojunction tri-channel design. By functionalizing the surface of the geometrically engineered channel with severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) antibody receptors, real-time detection of the SARS-CoV-2 spike S1 protein down to am concentrations is demonstrated in under 2 min in physiological relevant conditions.

Physico-chemical investigation of ZnS thin-film deposited from ligand-free nanocrystals synthesized by non-hydrolytic thio-sol-gel.

Ultra-small and monodispersed zinc sulfide nanocrystals (NCs) (d ≤ 3 nm) have been prepared without the use of any surfactants by a synthetic route using benzyl mercaptan as a source of sulfur. The prepared NCs are dispersible in highly polar solvents and display the capability to closely pack-up in a bulky film. The NCs were characterized by TEM, XRD and UV-vis optical absorption as well as by steady-state and time-resolved photoluminescence (PL) spectroscopies. Uniform films of ZnS were spin-coated on glass and ITO-glass substrates using a NCs dispersion in N,N-dimethylformamide. The NCs and the resulting films were characterized by morphological and optoelectronic probing techniques such as AFM, SEM, diffuse reflectance, PL and photoelectron spectroscopy in air. These physical investigations confirmed that the chalcogenide NCs grown by this method have the potential to be utilized directly as photocatalysts and are potentially useful building-blocks/starting materials for the fabrication of semiconductor thin films for optoelectronic applications such as LED, luminescent screens, field effect transistor and solar cells. Insights on the chemistry involved in the NCs growth have been provided revealing that their formation proceeds through a mechanism involving a thioether elimination reaction.

Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications.

We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼10(6) and a responsivity value of up to 2 × 10(3) A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.