RESUMO
Cesium-based inorganic perovskite solar cells (PSCs) are paid more attention because of their potential thermal stability. However, prevalent salt-doped 2,2',7,7'-tetrakis(N,N-dipmethoxyphenylamine)9,9'-spirobifluorene (Spiro-OMeTAD) as hole-transport materials (HTMs) for a high-efficiency inorganic device has an unfortunate defective thermal stability. In this study, we apply poly (3-hexylthiophene-2,5-diyl) (P3HT) as the HTM and design all-inorganic PSCs with an indium tin oxide (ITO)/SnO2/LiF/CsPbI3-xBrx/P3HT/Au structure. As a result, the CsPbI3-xBrx PSCs achieve an excellent performance of 15.84%. The P3HT HTM-based device exhibits good photo-stability, maintaining â¼80% of their initial power conversion efficiency over 280 h under one Sun irradiation. In addition, they also show better thermal stability compared with the traditional HTM Spiro-OMeTAD.
RESUMO
Cesium-based inorganic perovskite solar cells (PSCs) are promising due to their potential for improving device stability. However, the power conversion efficiency of the inorganic PSCs is still low compared with the hybrid PSCs due to the large open-circuit voltage (VOC ) loss possibly caused by charge recombination. The use of an insulated shunt-blocking layer lithium fluoride on electron transport layer SnO2 for better energy level alignment with the conduction band minimum of the CsPbI3- x Brx and also for interface defect passivation is reported. In addition, by incorporating lead chloride in CsPbI3- x Brx precursor, the perovskite film crystallinity is significantly enhanced and the charge recombination in perovksite is suppressed. As a result, optimized CsPbI3- x Brx PSCs with a band gap of 1.77 eV exhibit excellent performance with the best VOC as high as 1.25 V and an efficiency of 18.64%. Meanwhile, a high photostability with a less than 6% efficiency drop is achieved for CsPbI3- x Brx PSCs under continuous 1 sun equivalent illumination over 1000 h.
