RESUMO
We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm-1) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%. The dynamic characteristics were also evaluated, obtaining an intrinsic 3 dB modulation bandwidth of 14 GHz and a photon lifetime of 8 ps. Large-signal intensity modulation using a 231-1 PRBS pattern length revealed open eye diagrams up to 25 Gb/s and a penalty on the dynamic extinction ratio lower than 1 dB after transmission over a 2 km standard single mode optical fiber.
RESUMO
In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.
RESUMO
A scanning near-field optical microscopy study is undertaken on photonic crystal tapers. These tapers are used to couple a 3 microm wide multimode dielectric waveguide to a single-line defect monomode photonic crystal waveguide. Two kinds of taper, with or without a localized defect, are compared. Higher transmission efficiency is obtained when a defect is utilized. The near-field study at 1550 nm shows experimentally that this defect prevents leaky resonant states to appear in the taper and thus permits a decrease in out-of-plane losses. These observations are supported by band diagram calculations.
