Facile One-Pot Synthesis of Nickel Nanoparticles by Hydrothermal Method.

The one-pot synthesis process has emerged as an economical synthesis method without the involvement of purification or formation of intermediate compounds. Therefore, nickel nanoparticles were selectively synthesized by a simple hydrothermal method using nickel(II) chloride hexahydrate and borane-ammonia complex as a precursor and reducing agent, respectively. The morphology and crystal growth were observed by controlling the precursor concentration ratio of Ni:AB from 1:0.1 to 1:4 under various temperatures ranging from 80 to 140 degrees. In addition, we observed that the crystal growth rate under the influence of NaCl and KCl resulted in spherical Ni particles with size distributions controlled in the range of 297.65 nm to 1082.15 nm and 358.6 nm to 605 nm, respectively.

Synthesis of Sb2S3 NRs@rGO Composite as High-Performance Anode Material for Sodium-Ion Batteries.

Sodium ion batteries (SIBs) have drawn interest as a lithium ion battery (LIB) alternative owing to their low price and low deposits. To commercialize SIBs similar to how LIBs already have been, it is necessary to develop improved anode materials that have high stability and capacity to operate over many and long cycles. This paper reports the development of homogeneous Sb2S3 nanorods (Sb2S3 NRs) on reduced graphene oxide (Sb2S3 NRs @rGO) as anode materials for SIBs. Based on this work, Sb2S3 NRs show a discharge capacity of 564.42 mAh/g at 100 mA/g current density after 100 cycles. In developing a composite with reduced graphene oxide, Sb2S3 NRs@rGO present better cycling performance with a discharge capacity of 769.05 mAh/g at the same condition. This achievement justifies the importance of developing Sb2S3 NRs and Sb2S3 NRs@rGO for SIBs.

Humidity-Independent Gas Sensors Using Pr-Doped In2O3 Macroporous Spheres: Role of Cyclic Pr3+/Pr4+ Redox Reactions in Suppression of Water-Poisoning Effect.

Pure and 3-12 at. % Pr-doped In2O3 macroporous spheres were fabricated by ultrasonic spray pyrolysis and their acetone-sensing characteristics under dry and humid conditions were investigated to design humidity-independent gas sensors. The 12 at. % Pr-doped In2O3 sensor exhibited approximately the same acetone responses and sensor resistances at 450 °C regardless of the humidity variation, whereas the pure In2O3 exhibited significant deterioration in gas-sensing characteristics upon the change in the atmosphere, from dry to humid (relative humidity: 80%). Moreover, the 12 at. % Pr-doped In2O3 sensor exhibited a high response to acetone with negligible cross responses to interfering gases (NH3, CO, benzene, toluene, NO2, and H2) under the highly humid atmosphere. The mechanism for the humidity-immune gas-sensing characteristics was investigated by X-ray photoelectron and diffuse reflectance infrared Fourier transform spectroscopies together with the phenomenological gas-sensing results and discussed in relation with Pr3+/Pr4+ redox pairs, regenerative oxygen adsorption, and scavenging of hydroxyl groups.

Metal-Organic Framework-Derived Hollow Hierarchical Co3O4 Nanocages with Tunable Size and Morphology: Ultrasensitive and Highly Selective Detection of Methylbenzenes.

Nearly monodisperse hollow hierarchical Co3O4 nanocages of four different sizes (∼0.3, 1.0, 2.0, and 4.0 µm) consisting of nanosheets were prepared by controlled precipitation of zeolitic imidazolate framework-67 (ZIF-67) rhombic dodecahedra, followed by solvothermal synthesis of Co3O4 nanocages using ZIF-67 self-sacrificial templates, and subsequent heat treatment for the development of high-performance methylbenzene sensors. The sensor based on hollow hierarchical Co3O4 nanocages with the size of ∼1.0 µm exhibited not only ultrahigh responses (resistance ratios) to 5 ppm p-xylene (78.6) and toluene (43.8) but also a remarkably high selectivity to methylbenzene over the interference of ubiquitous ethanol at 225 °C. The unprecedented and high response and selectivity to methylbenzenes are attributed to the highly gas-accessible hollow hierarchical morphology with thin shells, abundant mesopores, and high surface area per unit volume as well as the high catalytic activity of Co3O4. Moreover, the size, shell thickness, mesopores, and hollow/hierarchical morphology of the nanocages, the key parameters determining the gas response and selectivity, could be well-controlled by tuning the precipitation of ZIF-67 rhombic dodecahedra and solvothermal reaction. This method can pave a new pathway for the design of high-performance methylbenzene sensors for monitoring the quality of indoor air.

Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview.

Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW) networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n-type NWs such as SnO2, ZnO, and In2O3 are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C2H5OH and NO2, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies-such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core-shell structures-have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n-type into p-type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors.

Transformation of ZnO nanobelts into single-crystalline Mn3O4 nanowires.

Single-crystalline Mn(3)O(4) nanowires were prepared using the vapor-phase transformation of ZnO nanobelts. Mn(3)O(4)-decorated ZnO nanobelts and ZnO-ZnMn(2)O(4) core-shell nanocables (NCs) were also obtained as reaction intermediates. Heteroepitaxial growth of tetragonal spinel Mn(3)O(4) (or ZnMn(2)O(4)) on wurtzite ZnO is a possible reason for the growth of single-crystalline Mn(3)O(4) nanowires. Growth interfaces are possibly formed between the wurtzite (101[overline]0)/(21[overline]1[overline]0) and spinel (1[overline]01)/(4[overline]11) planes. Various one-dimensional homonanostructures and heteronanostructures consisting of n-ZnO, p-Mn(3)O(4), and p-ZnMn(2)O(4) can be used to design high-performance gas sensors.

Highly sensitive and selective trimethylamine sensor using one-dimensional ZnO-Cr2O3 hetero-nanostructures.

Highly selective and sensitive detection of trimethylamine (TMA) was achieved by the decoration of discrete p-type Cr(2)O(3) nanoparticles on n-type ZnO nanowire (NW) networks. Semielliptical Cr(2)O(3) nanoparticles with lateral widths of 3-8 nm were deposited on ZnO NWs by the thermal evaporation of CrCl(2) at 630 °C, while a continuous Cr(2)O(3) shell layer with a thickness of 30-40 nm was uniformly coated on ZnO NWs at 670 °C. The response (R(a)/R(g): R(a), resistance in air; R(g), resistance in gas) to 5 ppm TMA of Cr(2)O(3)-decorated ZnO NWs was 17.8 at 400 °C, which was 2.4 times higher than that to 5 ppm C(2)H(5)OH and 4.3-8.4 times higher than those to 5 ppm p-xylene, NH(3), benzene, C(3)H(8), toluene, CO, and H(2). In contrast, both pristine ZnO and ZnO (core)-Cr(2)O(3) (shell) nanocables (NCs) showed comparable responses to the different gases. The highly selective and sensitive detection of TMA that was achieved by the deposition of semielliptical Cr(2)O(3) nanoparticles on ZnO NW networks was explained by the catalytic effect of Cr(2)O(3) and the extension of the electron depletion layer via the formation of p-n junctions.

Selective detection of NO2 and C2H5OH using a Co3O4-decorated ZnO nanowire network sensor.

The selective detection of two different gases, NO(2) and C(2)H(5)OH, has been achieved using a p-type Co(3)O(4)-decorated n-type ZnO nanowire (NW) network sensor. The gas selectivity was explained by the catalytic effect of nanocrystalline Co(3)O(4) and the extension of the electron depletion layer via the formation of p-n junctions.

Synthesis and Photoluminescence of Cd-doped alpha-MnS Nanowires.

Cd-doped alpha-MnS nanowires (av diam = 70 nm) were synthesized by the chemical vapor deposition of MnCl(2)/CdS powders. They all consisted of single-crystalline rock-salt MnS structures with the [111] growth direction. The X-ray diffraction pattern analysis indicates that 10% Cd doping would expand the lattice constants by 0.3%. As the content of Cd increases, the band edge emission band (2.9 eV) of photoluminescence becomes broader, and the Mn(2+) emission band (1.6 eV), which emerged at temperatures below approximately 150 K, decreases in intensity. The decay time of the 1.6 eV band decreases from 40 to 30 mus when the Cd doping is increased from 0 to 10%. In contrast to the bulk (T(N) = 150 K), the MnS nanowires were found to be paramagnetic with antiferromagnetic interactions. These distinctive magnetic properties of the nanowires have a strong correlation with their photoluminescence, which could be influenced by the nanosize effect and the Cd doping.

Ferrimagnetic Mn2SnO4 nanowires.

Single-crystalline Mn2SnO4 nanowires were first synthesized by chemical vapor deposition; they consist of inverse spinel structure grown with the [111] direction; the nanowires have a ferrimagnetic phase below 46 K (T(C)) with large hysteresis; this ferrimagnetic transition is probably due to the presence of Mn3+ ions at octahedral sites.

Photoluminescence of Cd1-xMnxS (x < or = 0.3) nanowires.

Cd1-xMnxS (x = 0.1-0.3) nanowires were synthesized by using the chemical vapor deposition method. They all consist of a single-crystalline wurtzite CdS structure with a [010] or [011] growth direction. The X-ray diffraction pattern reveals the contraction of the lattice constants due to the incorporation of Mn. The Mn2+ emission at approximately 2.15 eV, originating from the d-d (4T1 --> 6A1) transition, appears below 50-80 K. Its decay time is in the range of 0.55-1 ms, showing a decrease with increasing Mn content. The Mn doping reduces significantly the decay time of band-edge emission from 590 ps to 20-30 ps. Upon applying magnetic field (up to 7 T), the Mn2+ emission is suppressed and donor-acceptor pair emission becomes dominant, suggesting the energy transfer from the band electrons to the Mn2+ ions.

Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation.

ZnO nanowires doped with a high concentration Ga, In, and Sn were synthesized via thermal evaporation. The doping content defined as X/(Zn + X) atomic ratio, where X is the doped element, is about 15% for all nanowires. The nanowires consist of single-crystalline wurtzite ZnO crystal, and the average diameter is 80 nm. The growth direction of vertically aligned Ga-doped nanowires is [001], while that of randomly tilted In- and Sn-doped nanowires is [010]. A correlation between the growth direction and the vertical alignment has been suggested. The broaden X-ray diffraction peaks indicate the lattice distortion caused by the doping, and the broadening is most significant in the case of Sn doping. The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In- and Ga-doped nanowires, probably due to the larger charge density of Sn.

Short-period superlattice structure of Sn-doped In(2)O(3)(ZnO)(4) and In(2)O(3)(ZnO)(5) nanowires.

Two longitudinal superlattice structures of In(2)O(3)(ZnO)(4) and In(2)O(3)(ZnO)(5) nanowires were exclusively produced by a thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. The nanowires consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8% Sn. The X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. The high-resolution X-ray photoelectron spectrum suggests that In and Sn withdraw the electrons from Zn and enhance the number of dangling-bond O 2p states, resulting in the reduction of the band gap. Photoluminescence and cathodoluminescence exhibit the peak shift of near band edge emission to the lower energy and the enhancement of green emission as the In/Sn content increases.

Synthesis of blue-light-emitting ZnGa2O4 nanowires using chemical vapor deposition.

A high-density array of vertically aligned ZnGa(2)O(4) nanowires has been synthesized on Si substrates via CVD of ZnO-Ga at 1000 degrees C consisting of a single-crystalline cubic spinel structure grown in a [111] direction and exhibiting strong photoluminescence and cathodoluminescence in the blue wavelength region.