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The theory behind the electrical switching of antiferromagnets is premised on the existence of a well-defined broken symmetry state that can be rotated to encode information. A spin glass is, in many ways, the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. Here, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe1/3 + δNbS2, rooted in the electrically stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. Manipulating antiferromagnetic spin textures using a spin glass' collective dynamics opens the field of antiferromagnetic spintronics to new material platforms with complex magnetic textures.
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An amendment to this paper has been published and can be accessed via a link at the top of the paper.
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Nematic order is the breaking of rotational symmetry in the presence of translational invariance. While originally defined in the context of liquid crystals, the concept of nematic order has arisen in crystalline matter with discrete rotational symmetry, most prominently in the tetragonal Fe-based superconductors where the parent state is four-fold symmetric. In this case the nematic director takes on only two directions, and the order parameter in such 'Ising-nematic' systems is a simple scalar. Here, using a spatially resolved optical polarimetry technique, we show that a qualitatively distinct nematic state arises in the triangular lattice antiferromagnet Fe1/3NbS2. The crucial difference is that the nematic order on the triangular lattice is a [Formula: see text] or three-state Potts-nematic order parameter. As a consequence, the anisotropy axes of response functions such as the resistivity tensor can be continuously reoriented by external perturbations. This discovery lays the groundwork for devices that exploit analogies with nematic liquid crystals.
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Advances in controlling the correlated behaviour of transition metal dichalcogenides have opened a new frontier of many-body physics in two dimensions. A field where these materials have yet to make a deep impact is antiferromagnetic spintronics-a relatively new research direction promising technologies with fast switching times, insensitivity to magnetic perturbations and reduced cross-talk1-3. Here, we present measurements on the intercalated transition metal dichalcogenide Fe1/3NbS2 that exhibits antiferromagnetic ordering below 42 K (refs. 4,5). We find that remarkably low current densities of the order of 104 A cm-2 can reorient the magnetic order, which can be detected through changes in the sample resistance, demonstrating its use as an electronically accessible antiferromagnetic switch. Fe1/3NbS2 is part of a larger family of magnetically intercalated transition metal dichalcogenides, some of which may exhibit switching at room temperature, forming a platform from which to build tuneable antiferromagnetic spintronic devices6,7.
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An amendment to this paper has been published and can be accessed via a link at the top of the paper.
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When the Fermi level is aligned with the Dirac point of graphene, reduced charge screening greatly enhances electron-electron scattering1-5. In an optically excited system, the kinematics of electron-electron scattering in Dirac fermions is predicted to give rise to novel optoelectronic phenomena6-11. In this paper, we report on the observation of an intrinsic photocurrent in graphene, which occurs in a different parameter regime from all the previously observed photothermoelectric or photovoltaic photocurrents in graphene12-20: the photocurrent emerges exclusively at the charge neutrality point, requiring no finite doping. Unlike other photocurrent types that are enhanced near p-n or contact junctions, the photocurrent observed in our work arises near the edges/corners. By systematic data analyses, we show that the phenomenon stems from the unique electron-electron scattering kinematics in charge-neutral graphene. Our results not only highlight the intriguing electron dynamics in the optoelectronic response of Dirac fermions, but also offer a new scheme for photodetection and energy harvesting applications based on intrinsic, charge-neutral Dirac fermions.
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Electrons in materials with linear dispersion behave as massless Weyl- or Dirac-quasiparticles, and continue to intrigue due to their close resemblance to elusive ultra-relativistic particles as well as their potential for future electronics. Yet the experimental signatures of Weyl-fermions are often subtle and indirect, in particular if they coexist with conventional, massive quasiparticles. Here we show a pronounced anomaly in the magnetic torque of the Weyl semimetal NbAs upon entering the quantum limit state in high magnetic fields. The torque changes sign in the quantum limit, signalling a reversal of the magnetic anisotropy that can be directly attributed to the topological nature of the Weyl electrons. Our results establish that anomalous quantum limit torque measurements provide a direct experimental method to identify and distinguish Weyl and Dirac systems.
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The dispersion of charge carriers in a metal is distinctly different from that of free electrons owing to their interactions with the crystal lattice. These interactions may lead to quasiparticles mimicking the massless relativistic dynamics of high-energy particle physics, and they can twist the quantum phase of electrons into topologically non-trivial knots-producing protected surface states with anomalous electromagnetic properties. These effects intertwine in materials known as Weyl semimetals, and in their crystal-symmetry-protected analogues, Dirac semimetals. The latter show a linear electronic dispersion in three dimensions described by two copies of the Weyl equation (a theoretical description of massless relativistic fermions). At the surface of a crystal, the broken translational symmetry creates topological surface states, so-called Fermi arcs, which have no counterparts in high-energy physics or conventional condensed matter systems. Here we present Shubnikov-de Haas oscillations in focused-ion-beam-prepared microstructures of Cd3As2 that are consistent with the theoretically predicted 'Weyl orbits', a kind of cyclotron motion that weaves together Fermi-arc and chiral bulk states. In contrast to conventional cyclotron orbits, this motion is driven by the transfer of chirality from one Weyl node to another, rather than momentum transfer of the Lorentz force. Our observations provide evidence for direct access to the topological properties of charge in a transport experiment, a first step towards their potential application.
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We report on temperature-dependent photocurrent measurements of high-quality dual-gated monolayer graphene p-n junction devices. A photothermoelectric effect governs the photocurrent response in our devices, allowing us to track the hot-electron temperature and probe hot-electron cooling channels over a wide temperature range (4 to 300 K). At high temperatures (T > T(*)), we found that both the peak photocurrent and the hot spot size decreased with temperature, while at low temperatures (T < T(*)), we found the opposite, namely that the peak photocurrent and the hot spot size increased with temperature. This nonmonotonic temperature dependence can be understood as resulting from the competition between two hot-electron cooling pathways: (a) (intrinsic) momentum-conserving normal collisions that dominates at low temperatures and (b) (extrinsic) disorder-assisted supercollisions that dominates at high temperatures. Gate control in our high-quality samples allows us to resolve the two processes in the same device for the first time. The peak temperature T(*) depends on carrier density and disorder concentration, thus allowing for an unprecedented way of controlling graphene's photoresponse.
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We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.