Influence of long- and short-range chemical order on spontaneous magnetization in single-crystalline Fe0.6Al0.4compound thin films.

We systematically investigate the long- and short-range chemical order, lattice volume, and spontaneous magnetization in single-crystalline Fe0.6Al0.4compound thin films. The vapor-quenching method based on a molecular beam epitaxy technique is utilized to fabricate the single-crystalline Fe0.6Al0.4compound with the differentB2 long-range order parameterS. Swas varied by the deposition temperatureTd,and it increases with increasingTd. The lattice volumeVdecreased with increasingTd, while the tetragonal distortion, ∼4%, due to epitaxial strain were observed. The changes inSandVwere accompanied with the change in the magnetic moment per Fe,µFe.µFeshowed the monotonic decrease as a function ofSwhereasµFemonotonically increases withV. With considering tetragonal distortion,µFe-Vrelationship has a good agreement with the previous reports. TheµFe-Srelationship showed the steep decrease ofµFearoundS∼ 0.6. In contrast toµFe-Vrelationship,µFe-Srelationship does not match only from ours to previous studies but also among other reports. It implies the statistical number of the nearest-neighbor Fe-Fe bonds, i.e.S, cannot be an enough explanatory parameter. To clarify the structural origin of change inµFe, the short-range order (SRO) parameter inferred from the analysis of superlattice diffractions were introduced. They showed the clear difference for the films with high and lowµFe. The results suggest that the transition from the long- to the SRO state plays the significant role onµFe.

Magnetoelectric control of antiferromagnetic domain state in Cr2O3thin film.

Magnetoelectric (ME) effect is a type of cross-coupling between unconjugated physical quantities, such as the interplay between magnetization and electric field. The ME effect requires simultaneous breaking of spatial and time inversion symmetries, and it sometimes appears in specific antiferromagnetic (AFM) insulators. In recent years, there has been a growing interest for applying the ME effect to spintronic devices, where the effect is utilized as an input method for the digital information. In this article, we review the recent progress of this scheme mainly based on our own achievements. We particularly focus on several fundamental issues, including the ME control of the AFM domain state, which is detectable through the perpendicular exchange bias polarity. The progress made in understanding the switching mechanism, interpretation of the switching energy, switching dynamics, and finally, the future prospects are included.

Magnetic force microscopy using tip magnetization modulated by ferromagnetic resonance.

In magnetic force microscopy (MFM), the tip-sample distance should be reduced to analyze the microscopic magnetic domain structure with high spatial resolution. However, achieving a small tip-sample distance has been difficult because of superimposition of interaction forces such as van der Waals and electrostatic forces induced by the sample surface. In this study, we propose a new method of MFM using ferromagnetic resonance (FMR) to extract only the magnetic field near the sample surface. In this method, the magnetization of a magnetic cantilever is modulated by FMR to separate the magnetic field and topographic structure. We demonstrate the modulation of the magnetization of the cantilever and the identification of the polarities of a perpendicular magnetic medium.

Detection and in situ switching of unreversed interfacial antiferromagnetic spins in a perpendicular-exchange-biased system.

By using the perpendicular-exchange-biased Pt/Co/α-Cr(2)O(3) system, we provide experimental evidence that the unreversed uncompensated Cr spins exist at the Co/α-Cr(2)O(3) interface. The unreversed uncompensated Cr spin manifests itself in both the vertical shift of an element-specific magnetization curve and the relative peak intensity of soft-x-ray magnetic circular dichroism spectrum. We also demonstrate an in situ switching of the interfacial Cr spins and correspondingly a reversal of the exchange bias without interfacial atomic diffusion. Such switching shows the direct relationship between the interfacial antiferromagnetic spins and origin of the exchange bias. The demonstrated switching of exchange bias would likely offer a new design of advanced spintronics devices, using the perpendicular-exchange-biased system, with low power consumption and ultrafast operation.